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6 protocols using shamrock sr 303i

1

Absorption and CD Spectroscopy Measurements

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The CD and absorption spectra were measured using a Chirascan Plus spectrophotometer (Applied Photophysics, UK). Some absorption spectra were also recorded with a 0.3-m spectrograph Shamrock SR-303i equipped with a thermo-electrically cooled CCD camera DV420A-OE (both Andor Technology, UK). As a light source for absorption measurements, a high-stability tungsten lamp BPS100 (BWTek, USA) was used. Quartz cuvettes (Hellma Analytics, Germany) with 0.1–1.0 mm path length were used at 10–90 °C in a thermostabilized cell holder.
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2

Upconversion Quantum Yield Measurement

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QY of PUC was measured with a detector constructed with a spectroscopy camera (Andor iDus DU420A Si detector, ANDOR) coupled to spectrograph (Shamrock SR303i, ANDOR) and samples consisting of TES-ADT and triplet sensitizers (i.e., PdTPBP or PbS QDs) filled in a 1 mm path length quartz cuvette excited by CW laser. The QY (ΦUC) was calculated with the following eqn (2), where Φr is the QY of emission from the reference, Ai is the absorption at the excitation wavelength, Fi is the integrated emission, and ηi is the refractive index of the solvent, subscripts x and r designate the sample and reference, respectively. Rhodamine B in degassed ethanol with an excitation at 520 nm was applied to the reference (Φr = 0.97)31 in this work. The emitted light (Fx) was collected between 545 nm and 630 nm with an excitation at 647 nm from a CW laser (Coherent; OBIS) passing through 647 ± 10 nm band pass filter (for PdTPBP) or between 545 nm and 800 nm with an excitation at 1064 nm from a CW laser (Thorlabs) passing through 1000 nm long pass filter (for PbS QDs) from the side facing the detector. The emission from the sample passed through a 850 nm short pass filter before the detector for the 1064 nm excitation. The excitation power was controlled with a ND filter.
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3

Optical Characterization of Au32-NC

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Absorbance spectra of Au32-NC in solutions (0.5 mM in hexane) were acquired with an UV-vis-NIR spectrometer (Cary 5000, Agilent Technologies). For thin films spin-coated on glass slides (as described above), a Perkin Elmer Lambda 950 spectrometer was used. For individual microcrystals on glass slides, an inverted microscope (Nikon Eclipse Ti-S) with a spectrometer was used. The sample was illuminated with unpolarized white light by a 100 W halogen lamp. The transmitted light was collected by a ×60 objective (Nikon, CFI S Plan Fluor ELWD, NA = 0.7). The collected light was passed to a grating spectrograph (Andor Technology, Shamrock SR-303i) and detected with a camera (Andor Technology, iDusCCD). All absorbance spectra were energy-corrected using the expression I(E) = I(λ) × λ237 (link),57 (link). Photoluminescence images and emission spectra of individual Au32-NC microcrystals were acquired with a home-built confocal laser scanning microscope. The diode laser (iBeam smart, Toptica Photonics) was operated in continuous wave Gaussian mode at an excitation wavelength of λex = 488 nm. Luminescence images were obtained with a photon-counting module (SPCM-AQR-14, Perkin Elmer) and spectra were acquired with an UV-VIS spectrometer (Acton SpectraPro 2300, Princeton Instruments). The background was subsequently subtracted from the emission spectra.
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4

Ultrafast Transient Absorption Spectroscopy

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The pump pulses (at 532 nm) were generated using the second harmonic output of a Q-switched Nd:YVO4 laser (AOT-YVO-25QSPX, Advanced Optical Technologies Ltd.). The broadband probe pulses were generated using a home-built non-collinear optical parametric amplifier (NOPA) seeded with a portion of the output of a Ti:sapphire amplifier system (Solstice, Spectra-Physics) operating at 1 kHz. The resulting NOPA output was split into a probe and a reference beam which allows accounting for shot-to-shot laser fluctuations. The pump and probe beams were focused and overlapped on the film and their time delay was electronically set using a time delay generator (DG535, Stanford Research Systems) while the reference beam was passed through the sample at a spot unaffected by the pump. The transmitted probe and reference beams were dispersed in a spectrometer (Shamrock SR-303i, Andor Technology) and detected using a pair of 16 bit, 512-pixel linear InGaAs image sensors (Hamamatsu) connected to a custom-built board enabling data acquisition at 1 kHz (Entwicklungsbüro Stresing).
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5

Raman Spectroscopy Sample Analysis

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The system was equipped with a Ti-Sapphire Laser (MSquared, UK, Solstis) with an incident wavelength of 785 nm used for standard Raman measurements. The light is focused through a 60x objective (Nikon 0.80 NA) providing 150 mW of power to the sample plane. The light is collected in reflection, through the same objective, and focused into a 200 μm fibre. Raman photons are collected by a monochromator (Shamrock SR-303i, Andor Technology) with a 400 lines/mm grating, blazed at 850 nm, and a deep depletion, back illuminated and thermoelectrically cooled CCD camera (Newton, Andor Technology). Single point standard Raman data were taken with an acquisition time of 5 s per cell.
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6

Nanoscale Optical Characterization of AR Wafers

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All the SEM images were detected using field-emission scanning electron microscope (ZEISS ULTRA-55). The reflectance of AR wafer and bare silicon wafer was obtained by an UV-VIS spectrophotometer with an integrating sphere at near-normal incident angle of 8o (Shamrock SR303i, Andor Technology). The SERS signals were recorded using an upright confocal Raman microscope (Labram Aramis Raman Spectrometer, Horiba Scientific) equipped with a nitrogen-cooled multichannel CCD detector and through a 50 × objective. 532 nm wavelength laser was used with exposure time of 10 seconds for BPE. The power of excitation laser at the sample was ~0.5 mW and the spot size was about 2 μm2.
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