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15 protocols using alpha 300r system

1

Multi-Modal Spectroscopic Characterization of MoS2 Films

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Raman and PL spectroscopy were conducted using a Horiba LabRAM HR instrument with a laser wavelength of 532nm. Raman imaging was performed using a WiTec alpha300R system with a 532 nm light source (333 nm spot size) and a spectral resolution of +/−1 cm−1. X-ray photoelectron spectroscopy (XPS) characterization was conducted using a Kratos AXIS ULTRADLD XPS system equipped with an A1 Kα monochromatic X-ray source and a 165 mm mean radius electron energy hemispherical analyzer along with a vacuum pressure of 3 × 10−9 Torr. FTIR measurements were taken using a Nicolet 6700 FTIR system having ATR accessory with a resolution of 0.500 cm−1. Scanning transmission electron microscopy (STEM) imaging of the MoS2 films were conducted using a FEI Titan G2 60–300 X-FEG aberration-corrected and STEM equipped system with a CEOS DCOR probe corrector. ADF-STEM images (2048 × 2048 pixel2) were acquired on the STEM operating at 200 keV using a dwell time of 3–6 µs per image pixel at a camera length of 130 mm. The beam convergence angle αobj was measured to be 23 mrad. The ADF detector inner and outer angles of collection were measured to be 54 mrad and 317 mrad, respectively. Under these conditions, the measured probe size was ~0.8 Å.
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2

Comprehensive Material Characterization

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The Raman spectra, PL spectra and mapping were conducted using a WITec alpha 300 R system at excitation wavelengths of 488 and 532 nm, respectively. In order to avoid heating and optical doping effect, the power of the laser was kept as low as 10 μW for the room temperature PL measurement. The AFM measurement was performed using a cyphers. The crystal structure, sample size, morphologies, and surface element were determined via X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS).
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3

Nanomaterial Characterization Protocol

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Raman analysis was carried out using a WITec Alpha 300 R system with an excitation wavelength of 532 nm. HAADF-STEM studies were performed in JEM-ARM200 spherical aberration-corrected transmission electron microscope for the Cross-section sample fabricated with a focused ion-beam system.
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4

Characterization of Ni-supported Graphene

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Ni films were analyzed by scanning electron microscopy (FEI Helios Nanolab 650 Dualbeam Focused Ion Beam Workstation and Zeiss Supra55VP FESEM). Raman spectroscopy was performed using a 532 nm system (WITec alpha300 R). Optical microscopy was performed on a WITec alpha 300 R system. The graphene microstructure was characterized by atomic force microscopy (Veeco Dimension Icon) and transmission electron microscopy (JEOL 2100 and JEOL 2010 FEG-TEM). Plan view and cross sectional TEM specimens were prepared by conventional polishing followed by Argon ion milling. Alternatively, the graphene layers were transferred to lacey carbon TEM grids for plan view imaging. The respective top (before Ni delamination) and interfacial layers of graphene (after Ni delamination) were removed by scratching, dispersing them in acetone by sonication followed by drop casting on lacy carbon TEM grids. X-ray photoelectron spectroscopy was performed using a Physical Electronics Versaprobe II. The instrument used a scanning X-ray microprobe with a raster-scanned 10 μm diameter beam and pass energy 187.85 eV. The chamber pressure was 10-9 Torr.
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5

Raman Spectroscopy of Twisted Bilayer Graphene

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The Raman measurements of the TBG samples were performed using many different laser lines, in the near IR, visible and UV ranges, for samples with different twisting angle θ. Experiments in the visible range were performed in a DILOR XY triple-monochromator spectrometer equipped with a N2-cooled charge-couple device detector, a 1800 g/mm diffraction grating, and using an Ar/Kr with 12 laser lines in the visible range. The NIR Raman measurements were performed on a home-made setup, including an iHR-550 Horiba spectrometer equipped with a liquid-nitrogen-cooled silicon CCD detector. A tunable CW Ti:sapphire laser filtered using tunable laser line filters21 (link) was used for excitation. The scattered light was collected through a ×100 objective (NA = 0.95) using a backscattering configuration. The 3.41 eV Raman spectra were obtained using a Dilor UV Raman spectrometer equipped with a cooled CCD and an argon-ion laser. The laser power on the sample was kept lower than 1 mW with ×40 objective to avoid heating. The Raman spectra at 3.00 eV were obtained using a Jobin-Yvon-Horiba T64000 Raman spectrometer equipped with a cooled CCD with a krypton-ion laser. The laser power on the sample was limited to 0.5 mW with ×100 objective. In the case of G/h-BN heterostructures, the measurements were performed in Witec Alpha 300R system using 633 nm as a pump laser.
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6

Steady-State Photoluminescence Characterization

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For steady-state photoluminescence measurements, the sample was performed on the WITec Alpha 300 R system and excited using a continuous-wave 532-nm laser focused to a spot size of 1.5 μm. The sample temperature was kept at 6 K. The pressure of the low-temperature test system is below 10–5 pa, and the temperature is cooled by compressing helium gas. When the temperature is stable at 6 K, the PL spectrum test of the sample is carried out. The model of the cryogenic refrigeration system is C04-005-044, which comes from the Cryo Industries of America.
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7

Raman Spectroscopy and AFM Imaging

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All Raman spectra and maps were taken using a WITec Alpha300R system. The laser excitation wavelength and grating density were 532 nm laser line and 600 mm1, respectively. The laser beam size was ~500 nm and the laser power on the sample was adjusted to around 0.75 mW to avoid laser-induced heating. Atomic force microscopy (AFM) topography image was obtained using Veeco Digital Instrument Nanoscope III in tapping mode.
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8

High-Temperature Raman Spectroscopy of Materials

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Raman measurements were carried out using a WITec alpha300 R system equipped with a He–Ne laser (λ = 633 nm at 30 mW of power) and a high sensitivity back-illuminated Newton CCD camera. An air Olympus MPLAN (50×/0.76NA) objective was used. Time-series spectra were obtained in the 500–3800 cm−1 range by 10 scans with an integration time of 10 s and a resolution of 3 cm−1. Measurements were performed at T = 333 K using a THMS600 Linkam stage with a temperature stabilization of ±0.5 °C within intervals of 300 s. All data were manipulated by performing a baseline correction and cosmic ray removal. The spectrometer's monochromator was calibrated using the Raman scattering line of a silicon plate (520.7 cm−1).
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9

Cryogenic Optical Measurements of TMD

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All-optical data were measured on the WITec Alpha 300R system, which has 50× objective lenses and a light spot of nearly 1 μm. Before the optical measurement, the pressure in the cryogenic chamber should be kept below 10−5 Pa, and then the chamber was heated to 350 K for 20 min to remove the water vapor. Finally, optical measurements were performed on the WITec Alpha 300R Raman system when the sample temperature reached 8 K. The model number of the cryogenic refrigeration system is C04-005-044 from Cryo Industries of America. The excitation light source of the SHG signal was a 1064 nm pulsed laser, and the excitation wavelength of the excitation light source measured by other data was 532 nm (2.33 eV). The angle data shown in Fig. 1e is fitted by a sine function, y = y0 + A*sin (B*α + φ), where y is the intensity of SHG, y0, A, B are constants, α is the angle of rotation of the half-wave plate, and φ is a fitting parameter defining the relative orientation of TMD crystal lattices. The twist angle between the two monolayers can be deduced by fitting the resulting function.
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10

SERS Efficiency of AuFoN Substrates

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To analyze the SERS efficiency of the different AuFoN samples, p-aminothiophenol (p-ATP) was used as a known Raman reporter, which is covalently bound to gold surfaces. To obtain uniformly coated surfaces, the samples were immersed for 24 h in 10–4 M p-ATP in ethanol solution followed by rinsing the samples several times in ethanol. SERS measurements on the AuFoN substrates made of different-sized PS spheres were performed on a Witec Alpha 300R system, using 633 nm and 785 nm excitation lasers and an objective with NA = 0.4. Laser power and integration times/spectrum were 0.25 mW and 10 s (average of 6 accumulations) for the 633 nm laser, respectively, and 2.62 mW and 6 s (average of 6 accumulations) for the 785 nm laser.
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