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Orius 833 ccd camera

Manufactured by Ametek

The Orius 833 CCD camera is a high-performance scientific camera designed for laboratory applications. It features a 8.3 megapixel CCD sensor with a pixel size of 5.4 μm. The camera offers a maximum frame rate of 14 frames per second and supports a range of image bit depths. The Orius 833 provides a robust and reliable solution for various imaging tasks in a laboratory setting.

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5 protocols using orius 833 ccd camera

1

Continuous Rotation Electron Diffraction Protocol

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Continuous
rotation electron diffraction (cRED) samples were dispersed in acetone,
and a droplet of the suspension was transferred onto a carbon-coated
copper grid. Observation was performed on a JEOL JEM2100 microscope
operated at 200 kV (Cs = 1.0 mm, point resolution = 0.23 nm). Images
were recorded with a Gatan Orius 833 CCD camera (resolution 2048 ×
2048 pixels, pixel size 7.4 μm) under low dose conditions. Electron
diffraction patterns were recorded with a Timepix pixel detector QTPX-262k
(512 × 512 pixels, pixel size 55 μm, Amsterdam Sci. Ins.).
The data were collected using the software Instamatic.37 (link) A single-tilt tomography holder was used for
the data collection, which could tilt from −70 to +70°
in the microscope. The aperture used for cRED data collection was
about 1.0 μm in diameter. The speed of the goniometer tilt was
0.45° s–1, and the exposure time was 0.5 s
per frame. Three data sets were collected within 3.4, 3.5, and 3.7
min to minimize the beam damage and to maximize the data quality.
The covered tilt angles are 91.71, 94.56, and 99.95°, respectively.
In order to increase the completeness, these data sets were merged
via using XDS package.64 (link)
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2

Epitaxial BFO Film Growth and Characterization

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BFO film was grown epitaxially on a (100) KTO substrate using ultra high vacuum (<2 × 10−6 Pa) r.f. magnetron sputtering at 550 °C. Cross sectional TEM samples were prepared using FEI Nova 600 dual beam focused ion beam. Ga ion energy was gradually decreased from 30 to 2 keV with to minimize ion beam induced damage. TEM analysis was performed using (1) JEOL JEM-2100F equipped with Gatan Orius 833 CCD camera specifically designed for precise electron diffraction analysis with electron beam damage resistant scintillator, and (2) JEOL ARM 200 equipped with a probe corrector for atomic resolution scanning TEM (STEM) imaging. For XRD analysis, Bruker D8 discover four circle x-ray diffractometer was used with Cu radiation. RSM was recorded using two dimensional area detector (Hi-STAR).
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3

Transmission Electron Microscopy Analysis of Py-1P Crystals

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Samples for transmission electron microscopy observation were taken from the solution after synthesis. A droplet of the solution containing Py-1P single-crystals was transferred onto a carbon-coated copper grid. The observation was performed on a JEOL JEM2100 microscope and operated at 200 kV (Cs 1.0 mm, point resolution 0.23 nm). Images were recorded with a Gatan Orius 833 CCD camera (resolution: 2048 × 2048 pixels; pixel size: 7.4 µm). Electron diffraction patterns were recorded with a Timepix pixel detector QTPX-262k (512 × 512 pixels, pixel size 55 µm, Amsterdam Sci. Ins.). All the experiments were conducted under low-dose conditions.
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4

Characterization of BFO Thin Films on LSMO/STO and YAO Substrates

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The BFO thin films were grown on a (102¯) LSMO buffered (100) STO and a (100) YAO substrates using ultra-high vacuum (<2 × 10−6 Pa) r.f. magnetron sputtering (ULVAC Co. Ltd.) at 550 °C. The detail about the deposition of the LSMO bottom electrode layer on STO substrate is given elsewhere38 (link). The cross-sectional TEM samples were prepared by the focused ion beam technique, FEI Nova 600, with Ga ion beam. ~1 μm-thick Pt thin film was deposited on the surface of the sample to prevent the possible surface damage and re-deposition during the milling process. Then, the Ga ion beam energy gradually decreased from 30 to 1 keV to minimize ion beam induced damage. For atomic resolution HAADF- STEM analysis, a Cs-corrected TEM of JEOL JEM-ARM200F operated at 200 keV was used. For BF and NBED, a 200 keV JEOL JEM-2100F was used together with a Gatan Orius 833 CCD camera specifically designed with electron beam damage resistant scintillator. XRSM was performed using Rigaku SmartLab diffractometer with Cu radiation.
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5

Transmission Electron Microscopy Imaging and Crystallographic Rediffraction

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Samples for TEM investigations were dispersed in water. A droplet of the suspension was transferred onto a carbon-coated copper grid. TEM images and cRED data were collected on a JEOL JEM2100 microscope operated at 200 kV (Cs 1.0 mm, point resolution 0.23 nm). TEM images were recorded with a Gatan Orius 833 CCD camera (resolution 2048 Â 2048 pixels, pixel size 7.4 mm). cRED data collection was controlled by using the data acquisition soware Instamatic, 41, 57 (link) and the electron diffraction (ED) frames were recorded with a Timepix QTPX-262k hybrid detector (512 Â 512 pixels, pixel size 55 mm, max. 120 frames per second, Amsterdam Sci. Ins.) A single-tilt tomography holder, which could tilt from À70 to +70 in the TEM, was used for the data collection. The area used for cRED data collection was about 1.0 mm in diameter, as dened by a selected area aperture. To minimize electron beam damage to the crystal and maximize the data quality, a low electron dose and high rotation speed were applied. The goniometer rotation speed was 0.45 per second and the exposure time was 0.5 s per frame. A typical cRED dataset covered a crystal rotation angle of 103.3 and took 3.8 min to collect. cRED datasets were collected from several crystals.
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