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Jsm 7600 f field

Manufactured by JEOL

The JSM 7600-F is a field-emission scanning electron microscope (FE-SEM) manufactured by JEOL. It is designed for high-resolution imaging and analysis of a wide range of materials at the nanoscale level. The core function of the JSM 7600-F is to provide advanced imaging and analytical capabilities through the use of field-emission electron sources, which enable the generation of a narrow, high-brightness electron beam.

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3 protocols using jsm 7600 f field

1

Thermal Characterization of Alumina-Filled Phthalonitrile

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Thermal gravimetric analysis (TGA)
was carried out using a Thermogravimetric Analyzer Q500, TA Instruments.
Dynamic heating at a heating rate of 10 °C/min to 600 °C
was performed to study the thermal stability of PN samples in air
(60 mL/min). A JEOL JSM 7600-F field-emission scanning electron microscope
(FESEM) was used for morphology examination. Fourier transform infrared
(FTIR) spectra from 400 to 4000 cm–1 with spectral
resolution of 4 cm–1 were collected using a PerkinElmer
Instruments Spectrum GX FTIR spectrometer to study the chemical interaction
between alumina and phthalonitrile. X-ray photoelectron spectroscopy
(XPS) measurements were conducted using Kratos AXIS Supra to investigate
the chemical bonding present in the samples. TA Instrument Discovery
Hybrid Rheometer (HR-3) was used to determine the time taken for cross-linked
networks to form in alumina-filled PN without APB. Differential scanning
calorimetry (DSC) was used for curing studies of the filler-containing
PN systems. Samples were weighed and sealed in hermetic pans. Dynamic
heating scans were carried out using Discovery DSC, TA Instruments,
from 40 to 380 °C at a heating rate of 10 °C/min under flowing
N2 (40 mL/min).
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2

Characterization of C-nPd Film Morphology

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The topography and morphology of the films were studied with scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) composition analysis. These investigations were performed with the JEOL JSM-7600F field emission scanning electron microscope. For this purpose, the film samples were prepared on an alumina tape substrate. Observations of the surface topography were carried out at 5 keV incident electron beam energy. The microscope was equipped with an energy dispersive X-ray (EDX) spectrometer using X-MaxN 150 Silicon Drift Detector (Oxford Instruments). Due to the small thickness of the C-nPd layer, the quantitative analysis was carried out at a 5 kV accelerating voltage.
X-ray diffraction (XRD) studies were performed with a Rigaku SmartLab 3 kW diffractometer at room temperature in the θ/2θ scanning mode with CuKα radiation and Si:Li semiconductor detector. Diffraction measurements were performed in grazing incidence primary beam geometry (GIXD).
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3

Scanning Electron Microscopy Reflectance Spectroscopy

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Scanning electron microscopy (SEM) images were taken with a JEOL JSM 7600F field emission scanning electron microscope with an acceleration voltage of 5 kV. The experimental reflectance spectra were collected with a microspectrometer system (CRAIC QDI2010, CRAIC Technologies) with an aperture of 2 µm.
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