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Crossbeam nvision 40 system

Manufactured by Zeiss

The CrossBeam NVision 40 system is a focused ion beam-scanning electron microscope (FIB-SEM) designed for high-resolution imaging and sample preparation. It combines a field emission scanning electron microscope and a gallium ion beam column to provide advanced capabilities for materials analysis, failure analysis, and nanofabrication.

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2 protocols using crossbeam nvision 40 system

1

Characterizing Electropolished Ti Substrates

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The
crystallographic
orientation of the electropolished Ti substrate was mapped by EBSD
using a FEI XL30 scanning electron microscope operated at a 20 kV
accelerating voltage and equipped with a TSL-EDAX EBSD system. The
step size of the EBSD map was set to 2 μm, which led to a suitable
spatial resolution of the microstructure. The surface morphology of
carburized TiO2 was investigated with a field-emission
SEM based on a Gemini column in a Zeiss CrossBeam NVision 40 system.
Micrographs were taken with the in-lens secondary electron detector,
using an acceleration voltage of 4 kV and working distances of 4–7
mm.
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2

Preparing TEM Samples of Ne+ Irradiated Fe60Al40 Films

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Classical TEM cross-sections of Ne+ broad-beam irradiated Fe60Al40 films glued together in face-to-face geometry using G2 epoxy glue (Gatan), were prepared by sawing (Wire Saw WS 22, IBS GmbH), grinding (MetaServ 250, Bühler), polishing (Minimet 1000, Bühler), dimpling (Dimple Grinder 656, Gatan) and final Ar+ ion milling (Precision Ion Polishing System PIPS 691, Gatan). To guarantee the reference wave passing through field-free space in the holography experiment, the classically prepared specimens were divided into two parts along the glue line with only one part being actually used for analysis.
TEM lamella preparation of the Ne+ion beam structured Fe60Al40 film was done by in situ lift-out using a Zeiss Crossbeam NVision 40 system. To protect the sensitive surface of the magnetically patterned film at the area of interest, a carbon cap layer was deposited beginning with electron beam assisted precursor decomposition and subsequently followed by Ga focused ion beam (FIB) assisted precursor decomposition. Afterwards, the TEM lamella was prepared using a 30 keV Ga FIB with adapted currents. The lamella was transferred to a 3 post copper lift-out grid (Omniprobe) using a Kleindiek micromanipulator. To minimize sidewall damage, Ga+ ions with energy limited to 5 keV were used for the final thinning of the TEM lamella to electron transparency.
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