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Tof sims ncs instrument

Manufactured by ION-TOF
Sourced in Germany

The TOF-SIMS NCS instrument is a time-of-flight secondary ion mass spectrometry (TOF-SIMS) system designed for surface analysis. It is capable of providing high-resolution chemical information about the surface composition and structure of a wide range of materials.

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5 protocols using tof sims ncs instrument

1

ToF-SIMS Analysis of Root Canal Walls

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One tooth specimen per group was positioned with the cross‐sectioned root canal facing up. The sample holder attached to the transfer arm using a bayonet fitting was introduced in a chamber with a vacuum of 5.0 10‐6 mbar, ensuring an appropriate detection limit (few ppm). ToF‐SIMS analysis was performed using a ToF‐SIMS NCS instrument, which combines a ToF‐SIMS instrument (ION‐TOF GmbH, Münster, Germany) and an in‐situ VLS‐80 Scanning Probe Microscope (NanoScan, Switzerland). The probe was targeted on the shallow and flat area of the root canal wall at the middle one‐third of each root. High mass resolution spectra were collected. A Manta CCD camera (Allied Vision Technologies GmbH, Stadtroda, Germany) selected the most appropriate region in the root canal of each tooth specimen. For data analysis, each ion was normalized by total ion intensity to facilitate standardization and comparison between samples. The ion intensity from the regions of interest was calculated by extracting the area under the peak.
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2

Multimodal Surface Analysis by ToF-SIMS

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ToF-SIMS measurements were performed using a TOF-SIMS NCS instrument, which combines a TOF.SIMS5 instrument (ION-TOF, Münster, Germany) and an in situ Scanning Probe Microscope (NanoScan, Switzerland) at Shared Equipment Authority from Rice University.
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3

In-situ SPM Surface Topography

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Surface topography has been measured using an in-situ SPM (from a TOF-SIMS NCS instrument, which combines a TOF.SIMS5 instrument (ION-TOF GmbH, Münster, Germany) and an in-situ Scanning Probe Microscope (NanoScan, Switzerland) at Shared Equipment Authority from Rice University). The linescan profile has been obtained by scanning a 350um XY-line at a speed of 15um/s with a 400nm-pixel using contact mode.
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4

High-Resolution Mass Spectrometry Imaging

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Negative high resolution mass spectra imaging was performed using a TOF-SIMS NCS instrument, which combines a TOF.SIMS 5 instrument (ION-TOF GmbH, Münster, Germany) and an in-situ Scanning Probe Microscope (NanoScan, Switzerland) at the Shared Equipment Authority from Rice University.
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5

High-Resolution TOF-SIMS Analysis of Samples

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Positive and negative high–mass resolution spectra were performed using a TOF-SIMS NCS instrument, which combines a TOF-SIMS instrument (ION-TOF GmbH, Münster, Germany) and an in situ scanning probe microscope (NanoScan, Switzerland) at the Shared Equipment Authority from Rice University. Bunched 30-keV Bi3+ ions (with a measured current of 0.15 pA) were used as a primary probe for analysis (scanned area, 300 μm by 300 μm) with a raster of 128 × 128 pixels. A charge compensation with an electron flood gun has been applied during the analysis. An adjustment of the charge effects has been operated using a surface potential of −120 V and an extraction bias of 0 V for the positive polarity and a surface potential of 90 V and an extraction bias of −20 V for the negative polarity. The cycle time was fixed to 90 μs (corresponding to mass/charge ratio = 0 to 737 atomic mass unit mass range).
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