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Axs d8 advance system

Manufactured by Bruker
Sourced in Germany, United States

The AXS D8 Advance system is a versatile X-ray diffraction (XRD) instrument designed for a wide range of materials analysis applications. It is capable of performing various XRD techniques, including powder diffraction, thin-film analysis, and single-crystal diffraction, among others. The system is equipped with advanced features and components that enable high-precision measurements and data collection.

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7 protocols using axs d8 advance system

1

Characterization of Semiconductor Film Properties

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The polarized optical micrograph was taken with a Cakon-XPF-300C microscope. X-ray diffraction (XRD) spectrum of the semiconductor film was characterized with Bruker-AXS D8 Advance system. The surface roughness was measured using a BioScope Veeco atomic force microscope. A WK6515B precision impedance analyzer was used for capacitance measurement. Film thickness was characterized by a KLA-Tencor D-120 Stylus Profiler. The contact angle measurement was carried out with a Solon-200B contact-angle analyser. The electrical properties of the devices were tested with a Keithley 4200 semiconductor characterization system. All measurements were performed at room temperature in ambient air environment.
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2

Comprehensive Physicochemical Characterization

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Bruker‐AXS D8 Advance system with a Cu Kα radiation was conducted on measuring the crystal phase with PXRD in the 2θ range from 10° to 90°. Renishaw inVia confocal Raman microscope provision with an argon ion laser beam was implemented to test Raman spectra. Netzsch Thermo Microbalance TG 209 F1 Libra was employed to observe TGA from ambient temperature to 900 °C with a heating rate of 5 °C min−1 under nitrogen flow. Belsorp max gas sorption analyzer was used to analyze the sorption isotherms at 77 K. K‐Alpha+ XPS spectrometer (Thermo fisher Scientific, USA) was operated using Al Kα radiation to evaluate XPS and the elemental compositions. Moreover, FESEM (TESCAN Maia 3, Czech) and TEM (FEI Talos F200X, USA) with high‐angle annular dark‐field (HAADF) STEM and EDS (JEM2010‐HR, 200 kV) were utilized to study the surface morphology and architecture.
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3

Characterization of 1-D HP Memristor

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Field emission scanning electron microscopy (FESEM, JEOL JSM-7600F) was employed to characterize the topographical and cross-sectional images of the 1-D HP memristor. Glancing-angle X-ray diffraction measurements were conducted using a Bruker AXS D8 ADVANCE system with Cu Kα radiation (λ = 1.5418 Å). The XRD spectra were recorded with an incident angle of 5°, a step size of 0.05°, and a delay time of 1 s for each step. All electrical measurements were carried out using Keithley 4200 semiconductor parameter analyzer and a probe station.
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4

Characterization of Perovskite Solar Cell Components

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Absorbance was recorded with a UV-vis spectrophotometer (UV-3600; Shimadzu). The X-ray diffraction (XRD) patterns of samples and perovskite films were measured with an AXS D8 advance system (Bruker). The morphology of MAPbI3 perovskite films was measured with a scanning electron microscope (500 series; Sigma). g-C3N4 particles were characterized via transmission electron microscopy (TEM) using a G2 F20 system (Tecnai). The incident photo-to-electron conversion efficiency (IPCE) of PSCs was analyzed using a 300 W xenon lamp (66984; Newport). The photocurrent–voltage (JV) characteristics of PSCs were analyzed under simulated AM 1.5 G radiation (irradiance of 100 mW cm−2) using a solar simulator (91192-1000; Oriel) and a source meter (2400; Keithley). Electrochemical impedance spectroscopy (EIS) was employed using an electrochemical workstation (IM6; Zennium) over a frequency range of 100 mHz to 2 MHz with 10 mV AC amplitude at −1 V bias under simulated AM 1.5 G radiation (irradiance of 100 mW cm−2). Devices were measured under ambient conditions [15% < relative humidity (RH) < 60%] each time (winter or summer). After measurements had been taken, devices were stored in a humidity-controlled dry room (15% < RH < 40%).
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5

Comprehensive Physicochemical Characterization of Novel Materials

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Fourier transformed infrared spectra were obtained with a PerkinElmer Spectrum 100FT- IR spectrometer on neat samples (ATR FT-IR) (PerkinEmler, Shelton, CT, USA). X-ray powder diffraction (XRD) patterns were recorded on a D8 Advance Bruker AXS system (Karlsruhe, Germany) using Cu Kα radiation with a step size of 0.02° in the 2θ range from 10° to 80° for WAXS (geometry: Bragg–Brentano, θ/2θ mode). Scanning electronic microscopy (SEM) images were obtained using a JEOL JSM 6700F (SEMTech Solution, North Billerica, MA, USA). Transmission electronic microscopy (TEM) images were obtained using JEOL (JEOL JEM2010, 200 Kv, Pleasanton, CA, USA) at an activation voltage of 200 kV. Thermogravimetric analyses (TGA) were obtained with a thermal analyzer instrument Q500 (TA Instruments, New Castle, DE, USA) on the range 25–1000 °C at heating speed of 5 °C/min.
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6

Nanomaterial Characterization Suite

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DRUV spectra were measured in the 200–800 nm range using spectral on as the reference on a PerkinElmer Lambda 1050 spectrometer equipped with an integrating sphere (Lapshere, North Sutton, USA). Nitrogen sorption isotherms at 77 K were obtained with a Micromeritics ASAP 2010 apparatus (Micromeritics, Norcross, GA, USA). Prior to measurement, the samples were degassed for 8 h at 80 °C to remove any physisorbed species. The surface area of the samples was evaluated as Sg = NmAr, where Nm are the N2 molecules adsorbed in a statistical monolayer on a gram of sample, A is the Avogadro number, and r is the molecular area of adsorbed N2 (r commonly used being 0.162 nm2). The values are taken in the range of 0.03 < p/p0 < 0.3. X-ray powder diffraction (XRD) patterns were recorded on a D8 Advance Bruker AXS system (Bruker D8 Advance; Bruker Corp, Billerica, MA, EUA) using CuKα radiation with a step size of 0.02° in the 2θ range from 0.45 to 87°. Field Emission Scanning Electron Microscopy (FESEM) images were acquired using a ZEISS ULTRA 55 microscope equipped with an X-ray detector (EDS). Scanning Transmission Electron Microscopy (STEM) images were acquired using a JEOL JEM 2100F Field Emission Transmission Electron Microscope of 200 kV equipped with an X-ray detector. Raman spectra were recorded using a 514 nm excitation laser on a Horiba LabRAM HR Evolution spectrometer.
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7

Comprehensive Materials Characterization Protocol

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Fourier-transform infrared (FTIR) spectra were obtained with a PerkinElmer Spectrum 100 FT-IR spectrometer using neat samples (ATR FT-IR). DR-UV spectra were recorded in the 200–800 nm range, with Spectralon as the reference, using a PerkinElmer Lambda 1050 spectrometer equipped with an integrating sphere (Labshere, North Sutton, USA). Nitrogen sorption isotherms were obtained at 77 K with Micromeritics ASAP 2010 apparatus (Micromeritics, Norcross, GA, USA). Prior to measurement, the samples were degassed for 12 h at 100 °C to remove any physisorbed species. X-ray powder diffraction (XRD) patterns were recorded using a D8 Advance Bruker AXS system (Bruker D8 Advance; Bruker Corp, Billerica, MA, USA) using CuKα radiation and a step size of 0.02° in the 2θ range from 0.45 to 87°. Scanning electron microscopy (SEM) images were acquired using a ZEISS ULTRA 55 microscope equipped with an X-ray detector (EDS). Raman spectra were recorded using a 514 nm excitation laser on a Horiba LabRAM HR Evolution spectrometer.
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