The material response to the laser pulses was assessed using scanning electron microscopy SEM (Karl Zeiss XB1540, Jena, Germany) and Fourier transform infrared (FTIR) spectroscopy (JASCO FT/IR 4700 LE) with an information depth of one micrometre. Crater depths and diameters were measured by mechanical stylus profilometry (Dektak 8, Veeco, Plainview, NY, USA) and confocal microscopy.
Dektak 8
The Dektak 8 is a highly accurate surface profiler designed for measuring and analyzing surface topography. It utilizes a sensitive stylus to trace the surface contours and generate precise measurements of surface features, including step heights, roughness, and waviness.
Lab products found in correlation
11 protocols using dektak 8
Laser Ablation of Neat and Blended PHA Films
The material response to the laser pulses was assessed using scanning electron microscopy SEM (Karl Zeiss XB1540, Jena, Germany) and Fourier transform infrared (FTIR) spectroscopy (JASCO FT/IR 4700 LE) with an information depth of one micrometre. Crater depths and diameters were measured by mechanical stylus profilometry (Dektak 8, Veeco, Plainview, NY, USA) and confocal microscopy.
Characterization of Spalled Silicon Layers
Metal Layer Deposition for Microplates
Fabrication of PLLA Microwells via Hot Embossing
Thin Film Characterization by Advanced Analyses
Thermal Oxidation of Silicon Nanowires
nanowires (SiO2 NWs) on silicon (Si) wafers were produced
by thermal annealing of Si NWs grown by plasma-enhanced chemical vapor
deposition (PECVD). First, to induce the Si NW growth, a 2 nm-thick
Au film was deposited by physical vapor deposition (PVD) onto the
Si substrate prior to growth. The growth was performed using pure
SiH4 as a precursor at a total pressure of 1 Torr and substrate
temperature of 350 °C. A 13.56 MHz radiofrequency device with
a power density of 50 mW cm–2 was used to create
the plasma. Under these growth conditions, tens of μm-long Si
NWs with an average diameter of 30–300 nm at the bottom and
tapered shape are obtained.21 (link) After the
growth, the Si NWs were thermally oxidized in a convection oven (controlled
O2 atmosphere) at 980 °C for 8 h to form SiO2 NWs.22 (link),30 (link)The morphological characterization
of the SiO2 NWs was performed using an FEI Quanta FEG 400
F7 scanning electron microscope (SEM). The average thickness of the
NW layer over the fabrication substrate, measured using a profilometer
(Veeco DEKTAK 8, Advanced Development profiler), is about 8 μm
(
Thin Film Thickness and Morphology
The morphology of the film surface and cross section was characterized by a field emission scanning electron microscope (FE-SEM, Nova Nano SEM 450, FEI, Hillsboro, America).
Chitosan Layer Thickness Measurement
Characterization of Prussian Blue Film
Characterization of Al-ITZO TFTs
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