The largest database of trusted experimental protocols

Dektak 8

Manufactured by Veeco
Sourced in United States

The Dektak 8 is a highly accurate surface profiler designed for measuring and analyzing surface topography. It utilizes a sensitive stylus to trace the surface contours and generate precise measurements of surface features, including step heights, roughness, and waviness.

Automatically generated - may contain errors

11 protocols using dektak 8

1

Laser Ablation of Neat and Blended PHA Films

Check if the same lab product or an alternative is used in the 5 most similar protocols
Neat and blended PHAs films were ablated by means of a picosecond pulse Nd:YVO4 laser (RAPID: Coherent, Münster, Germany) integrated in a micromachining workstation by 3D-Micromac. A detailed description of the experimental set-up can be found in a previous publication of our group [19 (link)]. Polymer films were irradiated with short-wavelength (355 and 532 nm) pulses. Craters were produced on the surface of the three considered PHAs by applying single pulses at a frequency of 10 kHz, which allows to achieve the highest pulse energy and scanning speed of 1000 mm/s. On the blend, pulse overlapping was also applied to generate grooves. The percentage of overlapping between pulses (Ud) can be calculated by Equation (1) as a function of the frequency of emission of the pulses (f), the speed of the scanner to move over the substrate (v) and the laser spot diameter (D) (Figure 2).

The material response to the laser pulses was assessed using scanning electron microscopy SEM (Karl Zeiss XB1540, Jena, Germany) and Fourier transform infrared (FTIR) spectroscopy (JASCO FT/IR 4700 LE) with an information depth of one micrometre. Crater depths and diameters were measured by mechanical stylus profilometry (Dektak 8, Veeco, Plainview, NY, USA) and confocal microscopy.
+ Open protocol
+ Expand
2

Characterization of Spalled Silicon Layers

Check if the same lab product or an alternative is used in the 5 most similar protocols
The thicknesss of spalled Si layers were measured using field-emission scanning electron microscopy (FE-SEM, Nova230, FEI Co., USA). The surface profile and roughness were characterized by surface profilometry (Dektak-8, VEECO, USA). The residual stress at the fracture surface of spalled Si was measured by micro-Raman spectrometer (DXR, Thermo Fisher Scientific, USA) with a laser wavelength of 514 nm. The stress σSi at the fracture surface in free-standing spalled Si was calculated using the following equation: σSi,xx=σSi,yy(MPa)=250×Δω(cm1). where Δω is the Raman peak position shift between unprocessed c-Si donor substrate and free-standing spalled Si (Farrukh, 2012 ). Secondary ion mass spectrometry (SIMS, IMS 7f, CAMECA, France) was used to investigate the diffused metal impurities at the surface of free-standing spalled Si after the removal of the Ni stressor layer.
+ Open protocol
+ Expand
3

Metal Layer Deposition for Microplates

Check if the same lab product or an alternative is used in the 5 most similar protocols
Metal layers were deposited onto 16-well modules of the microplates by a sputtering apparatus (CFS-4ES, Shibaura Mechatronics Corp., Kanagawa, Japan). For preparation of a calibration curve, silver layers with various thicknesses as the metal mirror were formed onto microplates by changing deposition time. Wells of conventional microplates are too deep for any apparatus to directly measure the thickness of the layers formed on the bottom. Therefore, the bottom plate and the upper horizontal well part were cut off mechanically, and the thickness of deposited layer on the well surface was measured with a surface profile meter (Dektak8, Veeco Instruments, Inc., Plainview, NY, USA). Glass slides (76 × 26 mm2, Matsunami Glass Ind. Ltd., Osaka, Japan) were also used and modified similarly as control formats. For preparation of multilayer structures on glass slides or microplates for enhanced immunoassays, a 15-nm-thick chromium layer as an adhesive and a 200-nm-thick silver layer was deposited successively onto those formats.
+ Open protocol
+ Expand
4

Fabrication of PLLA Microwells via Hot Embossing

Check if the same lab product or an alternative is used in the 5 most similar protocols
The microwells were prepared by hot embossing in PLLA films in a similar manner to shown previously (Nagstrup et al. 2011) . Briefly, a PLLA solution (Nature Works LLC, 2002D, 25 wt% in dichloromethane) was first manually dispensed onto a 4-inch silicon wafer. Using a spin coating process, the wafer was accelerated to a final spin speed of 500 rpm which was maintained for 50 s in order to obtain a uniform PLLA film. Produced PLLA films were then degassed for 2 h and baked at 220°C for 1 h. The film thickness was measured using a contact profilometer (Dektak8, Veeco, Mannheim, Germany) and the films with a thickness of 100-110 µm were further used for fabrication of the PLLA microwells. For this purpose, a nickel stamp was prepared by electroplating. The stamp and the PLLA coated wafers were brought in contact in a hot embossing system (EV Group 520, St. Florian am Inn, Austria) and heated to 120°C with a temperature ramping of 10°C/min. A pressure of 1.9 MPa was applied to emboss the stamp into the polymer. After 1 h the assembly was cooled down to room temperature, the pressure was released and the stamp was removed from the polymer. Following hot embossing, the wafers containing PLLA microwells were cut into chips of 12.8 x 12.8 mm 2 .
+ Open protocol
+ Expand
5

Thin Film Characterization by Advanced Analyses

Check if the same lab product or an alternative is used in the 5 most similar protocols
An evaluation of the produced targets was carried out through a set of analyses. The density calculations were performed using information on the weight and thickness of obtained films. The weight measurements were performed with electronic precision balances (Sartorius MCA225S-2S00-I Cubis® II Semi Micro Balance, 220 g × 0.01 mg). The thickness was measured by a linear contact profilometer (Veeco Dektak 8). The growing behaviour and thickness of the films were accurately investigated by scanning electron microscopy (COXEM, CX-200plus). Additionally, X-ray Diffractograms were collected (X’Pert Powder, Philips) and analysed with dedicated HighScorePlus software [30 (link)]. The diffractogram was acquired by using Cu-K α X-ray λ = 1.54 Å as the radiation source at 40 kV and 40 mA.
+ Open protocol
+ Expand
6

Thermal Oxidation of Silicon Nanowires

Check if the same lab product or an alternative is used in the 5 most similar protocols
Silica
nanowires (SiO2 NWs) on silicon (Si) wafers were produced
by thermal annealing of Si NWs grown by plasma-enhanced chemical vapor
deposition (PECVD). First, to induce the Si NW growth, a 2 nm-thick
Au film was deposited by physical vapor deposition (PVD) onto the
Si substrate prior to growth. The growth was performed using pure
SiH4 as a precursor at a total pressure of 1 Torr and substrate
temperature of 350 °C. A 13.56 MHz radiofrequency device with
a power density of 50 mW cm–2 was used to create
the plasma. Under these growth conditions, tens of μm-long Si
NWs with an average diameter of 30–300 nm at the bottom and
tapered shape are obtained.21 (link) After the
growth, the Si NWs were thermally oxidized in a convection oven (controlled
O2 atmosphere) at 980 °C for 8 h to form SiO2 NWs.22 (link),30 (link)The morphological characterization
of the SiO2 NWs was performed using an FEI Quanta FEG 400
F7 scanning electron microscope (SEM). The average thickness of the
NW layer over the fabrication substrate, measured using a profilometer
(Veeco DEKTAK 8, Advanced Development profiler), is about 8 μm
(Figure 1).
+ Open protocol
+ Expand
7

Thin Film Thickness and Morphology

Check if the same lab product or an alternative is used in the 5 most similar protocols
The film thickness was detected by measuring a fall between the film surface and adjacent uncoated substrate, using a stylus profilometer (Dektak 8, Veeco, America). The fall was made through a mask of an iron plate attached to a screw that fixed the substrate to the rotation rig. At least two data points were received for each film to calculate the thickness.
The morphology of the film surface and cross section was characterized by a field emission scanning electron microscope (FE-SEM, Nova Nano SEM 450, FEI, Hillsboro, America).
+ Open protocol
+ Expand
8

Chitosan Layer Thickness Measurement

Check if the same lab product or an alternative is used in the 5 most similar protocols
The chip was first dried using a nitrogen gun for profile measurements under dry conditions. The thickness of the electrodeposited chitosan layer was measured by using a profilometer (Dektak-8, Veeco, Ltd., Tucson, AZ, USA). The measurements were taken at three different locations on the electrode, and the thickness’s mean and standard deviation was calculated.
+ Open protocol
+ Expand
9

Characterization of Prussian Blue Film

Check if the same lab product or an alternative is used in the 5 most similar protocols
The PB-modified microelectrode was visually inspected using an optical microscope; then the morphology of the PB surface was observed using a high-resolution scanning electron microscope (HRSEM; JSM-7400F-JEOL). The thickness of the PB film was characterized using Dektak profiler (Veeco Dektak-8).
+ Open protocol
+ Expand
10

Characterization of Al-ITZO TFTs

Check if the same lab product or an alternative is used in the 5 most similar protocols
The capacitance of the sensing electrode was characterized by a LCR meter (Hewlett Packard 4284a precision). The transfer and output characteristics of the Al-ITZO TFTs were electrically measured by a semiconductor analyzer (Hewlett Packard 4156a). The superficial and cross-sectional morphologies were imaged by field emission scanning electron microscopy (FE-SEM, Hitachi, model S-4800) and transmission electron microscopy (TEM, FEI, model Tecnai G² F30 S-Twin), respectively. The surface of FPS was investigated by a surface profiler (Veeco, model Dektak-8).
+ Open protocol
+ Expand

About PubCompare

Our mission is to provide scientists with the largest repository of trustworthy protocols and intelligent analytical tools, thereby offering them extensive information to design robust protocols aimed at minimizing the risk of failures.

We believe that the most crucial aspect is to grant scientists access to a wide range of reliable sources and new useful tools that surpass human capabilities.

However, we trust in allowing scientists to determine how to construct their own protocols based on this information, as they are the experts in their field.

Ready to get started?

Sign up for free.
Registration takes 20 seconds.
Available from any computer
No download required

Sign up now

Revolutionizing how scientists
search and build protocols!