PL spectra were measured through spectrofluorophotometer (RF-540) by using 325 nm line of He-Cd laser as excitation source. The film thickness was measured by ellipsometer. Fourier transform infrared (FTIR) spectra were recorded by Bomem MB-100 spectrometer using the KBr wafer technique. Polarization hysteresis loops were measured using an aixACCT TF Analyzer 1000 measurement system. X-ray differaction (XRD) was measured by a Bruker D8 XRD system with Cu Kα radiation source.
D8 xrd system
Manufactured by Bruker
The D8 XRD system is a versatile X-ray diffraction (XRD) instrument designed for a wide range of materials analysis applications. It provides accurate and reliable phase identification, structure determination, and quantitative analysis of crystalline materials.
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Lab products found in correlation
3 protocols using d8 xrd system
1
Spectroscopic and Structural Characterization
2
Characterization of Perovskite Films
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Zeiss 1540 XB CrossBeam scanning electron microscope equipped with OXFORD Instruments EDX system was used to perform scanning electron microscopy (SEM) (acceleration voltage 5 keV) EDX analysis (acceleration voltage 10 keV).
X‐ray diffraction (XRD) analysis was performed using Bruker D8 XRD system employing Cu and Kα radiation source (λ = 1.5418 nm at 40 kV and 20 mA). A PerkinElmer Lambda 1050, UV/Vis/NIR spectrometer was used to measure the transmission spectrum of the perovskite film.
X‐ray diffraction (XRD) analysis was performed using Bruker D8 XRD system employing Cu and Kα radiation source (λ = 1.5418 nm at 40 kV and 20 mA). A PerkinElmer Lambda 1050, UV/Vis/NIR spectrometer was used to measure the transmission spectrum of the perovskite film.
3
In-situ X-ray Diffraction of Nanocrystal Orientation
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The samples were loaded into an annealing chamber mounted on a commercial Bruker D8 XRD system equipped with a CuKα X-ray source and goebel mirror. A linear Vantec detector was positioned with fixed angle relative to the X-ray source, enabling acquisition of the diffraction pattern in a single snapshot in a 2θ range of 23°-36° and with a resolution of 0.012° per pixel. The out-ofplane orientation of the (002) diffraction plane of the NCs was investigated by changing the inclination of the incoming beam θ from 7° to 22° in 0.25° steps while simultaneously changing the detector position in 0.5° steps. The corresponding inclination angle of the probed diffracted plane was calculated for every step in θ and for every pixel. After loading the samples, the annealing chamber was immediately evacuated and filled with He-overpressure at a constant He-flow of 250 cm3/min. The orientation of the NCs was investigated both before and after isothermal anneal, without altering the samples position within the annealing chamber. The heating rates during this isothermal anneal were limited to 3 °C/s, after which the sample remained at a temperature of 150 °C for 60 min.
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