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Micro raman system 2000

Manufactured by Renishaw
Sourced in United Kingdom

The Micro-Raman system 2000 is a versatile and high-performance analytical instrument designed for materials characterization. It provides non-destructive, micro-scale analysis of a wide range of samples, including semiconductors, polymers, and biological materials. The system features high-resolution Raman spectroscopy capabilities, enabling detailed chemical and structural information to be obtained from microscopic regions of interest.

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3 protocols using micro raman system 2000

1

Multimodal Characterization of Material Samples

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The scanning electron microscope (SEM) was used to observe the microscopic morphology (Gemini 300, Zeiss, Birmingham, UK). The X-ray photoelectron spectrometer (XPS) was used to characterize the elemental composition and chemical state of the sample surface before and after adsorption (ESCALAB 250Xi, Thermo Fisher, Waltham, MA, USA). The vibrating Sample Magnetometer (VSM) was used to determine saturation magnetization (LakeShore 7404, Westerville, OH, USA). Raman spectroscopy was measured by the Micro-Raman System 2000 (Renishaw, Wotton-under-Edge, UK). The Fourier transform infrared spectrometer (FTIR) was applied to characterize the functional groups (PerkinElmer Frontier, Waltham, MA, USA).
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2

Comprehensive Characterization of Nanomaterials

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SEM images were recorded on a Hitachi S-4800 microscope. TEM images were collected on an FEI-Tecnai G2 20. XRD was carried out on a Shimadzu LabX XRD-6000. Raman spectroscopy was obtained using a Renishaw Micro-Raman system 2000 with He-Ne laser excitation (wavelength 623.8 nm). XPS was performed with a VG ESCALAB 250 spectrometer using a nonmonochromatized Al Kα X-ray source (1486.6 eV). The C 1s and N 1s spectra were obtained after charge correction using the binding energy of Ti 2p as reference. ICP-AES was conducted on Optima 2000 DV spectrometer. Auger electron spectroscopy with argon sputtering was obtained from PHI-700Xi equipped with a field emission source and a coaxial cylindrical mirror analyzer (5 KV, ≤3.9 × 10−9 Torr). The sputtering rate was about 50 nm min−1. Conductivity was measured by a four-point probe meter (RTS-8).
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3

Comprehensive Catalyst Characterization

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Scanning electron microscopy (SEM, Hitachi S-4800) and transmission electron microscopy (TEM, FEI-Tecnai G2 20) were used to characterize the morphology of catalysts. Energy dispersive X-ray spectrometer (EDS) elemental mapping was recorded on an Iridium Ultra Premium EDS System (A550I, IXRF, USA). X-ray diffraction (XRD) patterns were carried out on a Shimadzu LabX XRD-6000 to investigate the crystal structure. X-ray photoelectron spectra (XPS) were obtained with an ESCALAB 250Xi spectrometer using a nonmonochromatized A1 Kα X-ray source (1486.6 eV) for elemental composition analyses, together with a Renishaw Micro-Raman system 2000 with He-Ne laser excitation for Raman spectroscopy. N2 adsorption–desorption isotherms were obtained at 77 K with a Quadrasorb 2MP instrument.
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