SiNW-FET device was fabricated by standard photolithography procedures as was reported previously [41 (link)]. Briefly, outer pads and gates were defined using multilayer photoresist (~500 nm LOR-5A and ~500 nm S-1805; MicroChem Corp.) using an outer mask, followed by thermal evaporation of Cr/Au (5/60 nm) respectively, and lift off using PG remover. Next, source and drain electrodes were defined using the same photoresists and were metallized by e-beam evaporation of Ti/Pd/Ti (5/60/5 nm) respectively. Next, device was coated with an insulating layer of silicon nitride (~50 nm) deposited by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICP-PECVD) followed by lift off in PG remover.
Lor5a
Manufactured by MicroChem
Sourced in United States
LOR5A is a photoresist material designed for use in the semiconductor and microelectronics manufacturing industries. It is a negative-tone, high-resolution photoresist with excellent etch resistance. LOR5A is primarily used as a lift-off layer in the fabrication of metal structures and thin films.
Automatically generated - may contain errors
Lab products found in correlation
S1805, by MicroChem (1 mentions)
Bak 600, by Oerlikon Balzers (1 mentions)
Az1505, by MicroChem (1 mentions)
Tetramethylammonium hydroxide, by Merck Group (1 mentions)
1 hydroxybenzotriazole, by Merck Group (1 mentions)
N n diisopropylcarbodiimide, by Merck Group (1 mentions)
Pmma a4, by MicroChem (1 mentions)
Az4562, by MicroChemicals (1 mentions)
Anthraquinone 2 carboxylic acid, by Merck Group (1 mentions)
Phosphate buffered saline (pbs), by Merck Group (1 mentions)
D glucose, by Merck Group (1 mentions)
Sodium l lactate, by Merck Group (1 mentions)
Remover pg, by MicroChem (1 mentions)
Oxalyl chloride, by Merck Group (1 mentions)
Poly l lysine (pll), by Ted Pella (1 mentions)
Pci 6030e, by National Instruments (1 mentions)
N n dimethylformamide (dmf), by Merck Group (1 mentions)
Fusion 200, by Chemyx (1 mentions)
6 protocols using lor5a
1
SiNW-FET Device Fabrication Protocol
2
Fabrication of Patterned Electrodes on Mempax Glass
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Flow cells were fabricated according
to the procedure described earlier.40 (link) A
bilayer lift-off recipe was used for fabricating Au electrodes on
Mempax glass wafers (Schott). First, LOR 5A (MicroChem) was spin-coated,
after which normal lithography was performed on top with Olin OiR
907–17 photoresist (FujiFilm) to create a bilayer resist stack.
Electrode patterns were made by exposing the photoresist through a
patterned photomask and developing in Olin OPD 4262 (FujiFilm). The
develop step washed away the exposed photoresist, and etching through
the LOR 5A layer created an undercut. Then, 5 nm Ti and 95 nm Au were
deposited via e-beam evaporation (BAK 600, Balzers). The bilayer resist
was then removed by sonication in acetone (20 min) and isopropanol
(10 min) followed by 5 min immersion in OPD 4262, serving as a sacrificial
layer to leave patterned Au electrodes on Mempax glass. To fabricate
the Cr corrals (10 nm thick) in between the Au electrodes, the same
procedure was performed a second time, but in this case following
alignment with respect to the Au electrodes.
to the procedure described earlier.40 (link) A
bilayer lift-off recipe was used for fabricating Au electrodes on
Mempax glass wafers (Schott). First, LOR 5A (MicroChem) was spin-coated,
after which normal lithography was performed on top with Olin OiR
907–17 photoresist (FujiFilm) to create a bilayer resist stack.
Electrode patterns were made by exposing the photoresist through a
patterned photomask and developing in Olin OPD 4262 (FujiFilm). The
develop step washed away the exposed photoresist, and etching through
the LOR 5A layer created an undercut. Then, 5 nm Ti and 95 nm Au were
deposited via e-beam evaporation (BAK 600, Balzers). The bilayer resist
was then removed by sonication in acetone (20 min) and isopropanol
(10 min) followed by 5 min immersion in OPD 4262, serving as a sacrificial
layer to leave patterned Au electrodes on Mempax glass. To fabricate
the Cr corrals (10 nm thick) in between the Au electrodes, the same
procedure was performed a second time, but in this case following
alignment with respect to the Au electrodes.
3
Fabrication of Microfluidic Drainage Devices
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The drainage devices were fabricated using photolithography techniques similar to those that were demonstrated previously.[17 (link)] The fabrication was done on silicon wafers with a nickel-releasing layer. Briefly, microchannel walls were patterned with negative photoresist SU-8 and the microchannels were formed by sacrificial photoresist (LOR 5A and AZ1505, Microchem, Westborough, MA). The meshwork had an overall area of 7mm × 7mm and a grid period of 100μm. The thickness of the meshwork was 4 μm (Fig 2
4
Fabrication of Glucose Sensing Hydrogels
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The following chemicals
were supplied by Sigma-Aldrich (now MERCK): phosphate buffered saline
(PBS), N,N′-diisopropylcarbodiimide
(DIC), 1-hydroxybenzotriazole (HOBt), Anthraquinone-2-carboxylic acid
(AQCA),d -glucose (GLU), PEG-diacrylate Mn575 (PEGDA), pentaerythritol
tetraacrylate, diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide (DTPO),
agar (A1296 powder), tetrakis(dimethylamido) hafnium(IV), glucose
oxidase (GOX; G2133), N,N-diethylhydroxylamine
(DEHA), sodium l-lactate (LAC), and tetramethylammonium hydroxide
(TMAH). Dimethyl sulfoxide (DMSO), hydrogen peroxide (H2O2), and sulfuric acid were supplied by Biolab. N-Methyl-2-pyrrolidone (NMP), acetone, and 2-isopropanol
(IPA) were supplied by J.T Baker. LOR5A, SF15, PMMA A4, and MMA el6
were supplied by Microchem (now Kayaku Advanced Materials). Lactate
oxidase was from A.G Scientific. Hexamethyldisilazane (HMDS), AZ1505,
and AZ4562 were supplied by Microchemicals. (3-Aminopropyl)-dimethyl-ethoxysilane
was supplied by Gelest. SOI and Si wafers were supplied by SOITEC
and University Wafers (device layer 50 nm 10 Ω per cm, BOX 150
nm, handle 725 μm, 10 Ω per cm, both handle and device
layers were ⟨0-0-1⟩).
were supplied by Sigma-Aldrich (now MERCK): phosphate buffered saline
(PBS), N,N′-diisopropylcarbodiimide
(DIC), 1-hydroxybenzotriazole (HOBt), Anthraquinone-2-carboxylic acid
(AQCA),
tetraacrylate, diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide (DTPO),
agar (A1296 powder), tetrakis(dimethylamido) hafnium(IV), glucose
oxidase (GOX; G2133), N,N-diethylhydroxylamine
(DEHA), sodium l-lactate (LAC), and tetramethylammonium hydroxide
(TMAH). Dimethyl sulfoxide (DMSO), hydrogen peroxide (H2O2), and sulfuric acid were supplied by Biolab. N-Methyl-2-pyrrolidone (NMP), acetone, and 2-isopropanol
(IPA) were supplied by J.T Baker. LOR5A, SF15, PMMA A4, and MMA el6
were supplied by Microchem (now Kayaku Advanced Materials). Lactate
oxidase was from A.G Scientific. Hexamethyldisilazane (HMDS), AZ1505,
and AZ4562 were supplied by Microchemicals. (3-Aminopropyl)-dimethyl-ethoxysilane
was supplied by Gelest. SOI and Si wafers were supplied by SOITEC
and University Wafers (device layer 50 nm 10 Ω per cm, BOX 150
nm, handle 725 μm, 10 Ω per cm, both handle and device
layers were ⟨0-0-1⟩).
5
Fabrication of Iron Thin Films
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As shown in fig. S1A, a 4-inch single-side polished prime silicon wafer was cleaned in piranha solution, acetone, isopropyl alcohol, and ultrapure water sequentially. Lift-off photoresist LOR5A (MicroChem) and negative photoresist NFR105G (JSR Microelectronics) were spin-coated at 4000 rpm, respectively, followed by photolithography patterning with a contact aligner (Karl Suss MA/BA6). Iron was deposited by an e-beam evaporator (Semicore) under 10−7 mtorr of vacuum with deposition rate of 0.1 nm per second to target thicknesses of 1, 3, 5, 8, and 10 nm. The actual thicknesses of the deposited films were measured to be 1.0 ± 0.1, 3.0 ± 0.2, 6.5 ± 0.5, 9.2 ± 0.4, and 11.9 ± 0.8 nm by atomic force microscopy (Bruker Dimension Icon). A thin layer of negative photoresist NFR105G was spin-coated as a protective layer before dicing. The silicon substrate was then diced into individual dies of 1.2 cm × 1.2 cm by a dicing saw (Advanced Dicing Technologies). Photoresist was lifted off by soaking the substrate inside remover PG (MicroChem) overnight at 60°C.
6
Fabrication and Characterization of Nanodevices
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Gold nanoparticles 20 nm (Ted Pella), poly-l -lysine (Ted Pella), silicon wafer covered with 600 nm thermal
oxide layer (<0.005 Ω/cm, SSP prime grade, Silicon Quest
International), LOR5A (Microchem) and 500 nm S1805 (Shipley), sodium
9,10-anthraquinone-2-sulfonate (743038, Sigma-Aldrich), oxalyl chloride
(O880, Sigma-Aldrich), N,N-dimethylformamide
(227056, Sigma-Aldrich), (244511, Sigma-Aldrich), acetone (9005-68,
J.T. Baker), isopropanol (9079-05, J. T. Baker), deionized water (18
MΩ·cm), glovebox (150B-G, Mbraun), (3-aminopropyl)-dimethyl-ethoxysilane
(SIA0603.0, Gelest), anhydrous toluene (244511, Sigma-Aldrich), anhydrous
pyridine (270970, Sigma-Aldrich), plasma-enhanced chemical vapor deposition
(Benchmark 800 ICP, Axic), atomic layer deposition (Savannah 200 system,
Cambridge Nanotech), Rapid Thermal Processor system (AnnealSys, AS-Micro),
probe station include DAQ card (PCI-6030E, National Instrument) and
current preamplifier (DL Instruments, model 1211), mass spectroscopy
(Autospec M250Q, Waters Corp. USA), X-ray photoelectron spectroscopy
(Multi-Technique System 5600, PHI), wire-bonder (Model 8850, West
Bond), current recording system (FES-SM32P), syringe pump (Fusion
200, Chemyx).
oxide layer (<0.005 Ω/cm, SSP prime grade, Silicon Quest
International), LOR5A (Microchem) and 500 nm S1805 (Shipley), sodium
9,10-anthraquinone-2-sulfonate (743038, Sigma-Aldrich), oxalyl chloride
(O880, Sigma-Aldrich), N,N-dimethylformamide
(227056, Sigma-Aldrich), (244511, Sigma-Aldrich), acetone (9005-68,
J.T. Baker), isopropanol (9079-05, J. T. Baker), deionized water (18
MΩ·cm), glovebox (150B-G, Mbraun), (3-aminopropyl)-dimethyl-ethoxysilane
(SIA0603.0, Gelest), anhydrous toluene (244511, Sigma-Aldrich), anhydrous
pyridine (270970, Sigma-Aldrich), plasma-enhanced chemical vapor deposition
(Benchmark 800 ICP, Axic), atomic layer deposition (Savannah 200 system,
Cambridge Nanotech), Rapid Thermal Processor system (AnnealSys, AS-Micro),
probe station include DAQ card (PCI-6030E, National Instrument) and
current preamplifier (DL Instruments, model 1211), mass spectroscopy
(Autospec M250Q, Waters Corp. USA), X-ray photoelectron spectroscopy
(Multi-Technique System 5600, PHI), wire-bonder (Model 8850, West
Bond), current recording system (FES-SM32P), syringe pump (Fusion
200, Chemyx).
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