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Nova nanolab 600 dualbeam

Manufactured by Thermo Fisher Scientific

The Nova NanoLab 600 DualBeam is a scanning electron microscope (SEM) and focused ion beam (FIB) system. It is designed for high-resolution imaging, milling, and deposition applications in materials science, nanotechnology, and semiconductor research.

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7 protocols using nova nanolab 600 dualbeam

1

Atomic-Resolution Microscopy of Materials

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Electron microscopy studies were
performed at the NIST Materials Measurement Laboratory. Electron transparent
cross-sectional samples were prepared with an FEI Nova NanoLab 600
DualBeam (SEM/FIB). An FEI Titan 80–300 probe-corrected STEM/TEM
microscope operating at 300 keV was employed to conduct atomic-resolution
HAADF-STEM imaging and EELS analysis.
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2

Cross-Sectional Analysis of Coated Particles

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Coated particles were mounted and sputtered as in SEM. Once particles were loaded into the FEI Nova NanoLab 600 DualBeam (FIB/SEM) System, an additional platinum mask was deposited locally by a focused Ga ion beam at 30 kV and 28 pA to an approximate thickness of 0.1 µm. An ion beam at 30 kV and 93 pA was used to create a cross-sectional wall into a selected particle. SEM images were taken at 5 kV and 98 pA with the TLD (through-lens detector) in the SE (secondary electron) mode.
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3

Atomic-Resolution TEM Sample Preparation

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An FEI Nova NanoLab 600 DualBeam (SEM/FIB) was employed to prepare cross-sectional TEM samples. Carbon was deposited on top of the device to protect the surface. To reduce Ga-ions damage, in the final step of preparation the TEM samples were thinned with 2 kV Ga-ions using a low beam current of 29 pA and a zero-degree incident angle. An FEI Titan 80–300 probe-corrected scanning transmission electron microscope (STEM) equipped with monochromator and GIF Tridiem electron energy loss spectrometer (EELS) system was employed to acquire atomic-resolution high-angle annular dark field (HAADF) images and EELS based spectrum-images. HAADF images were acquired with the detector semi-angular collection range of 35 – 195 mrad. The spectrum-images were acquired with a condenser aperture convergence semi-angle of 13 mrad and a spectrometer entrance aperture collection semi-angle of 14 mrad.
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4

Subsurface Microstructure Analysis of 5Y-AL Abutment Teeth

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The subsurface microstructure at the thin walls surrounding the abutment teeth of 5Y-AL was examined by FIB-SEM (Nova NanoLab 600 DualBeam, FEI, Eindhoven, The Netherlands).
Cracked thin wall was glued with silver paint onto an aluminium stub and were coated with a platinum layer of about 20 nm. An in-situ ion beam-induced Pt deposition was performed over the areas of interest to minimize the curtain effect and to protect the sample surface from implantation. Coarse milling of FIB sections in the size of about 30 µm width and 30 µm depth was performed at 30 kV ion accelerating voltage and 6.5 nA beam currents. Fine milling and cleaning were performed at 30 kV ion accelerating voltage and decreased beam currents from 2.7 nA, 0.9 nA, 0.44 nA till 0.26 nA in sequence to reach a clean cross-section for SEM imaging and to avoid any ion-beam induced transformation. SEM imaging was performed at 3 kV simultaneously with Secondary Electron (SE) and Energy filtered Backscattered Electron (BSE) imaging.
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5

Atomic-Resolution STEM Sample Preparation

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An FEI Nova NanoLab 600 DualBeam (SEM/FIB) was employed to prepare crosssectional STEM samples. Platinum was initially deposited on top of the films to protect the sample surface using electron beam deposition. To reduce the damage from the gallium ions, in the final step of preparation the STEM samples were thinned with 2 kV Ga-ions using a low beam current of 29 pA. An FEI Titan 80-300 probe-corrected STEM/TEM microscope operating at 300 keV was employed to acquire atomicresolution high-angle annular dark field (HAADF) STEM images.
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6

Characterization of Quasicrystal Samples

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The FIB and TEM facilities used are in the Kavli Nanoscience Institute at Caltech. FIB section A was milled and lifted out from quasicrystal-bearing regions using an FEI Nova 600 Nanolab DualBeam FIB and SEM using a 30 kV Ga-ion beam for initial milling. After placement on a copper TEM grid, this sample was thinned and finalized with an 8 kV 19 nA Ga-ion beam. FIB section B was thinned to 700 nm on the Nova 600 with 30 kV Ga beam and then transferred to a. Zeiss Orion NanoFab to finalize the sample thinning to ~100 nm, with a 5 kV Ga beam. Analytical transmission electron microscopy (ATEM) analysis was performed on a FEI Tecnai TF20 instrument with super-twin objective lenses, operated at 200 kV. The energy dispersive spectroscopy (EDS) data were collected in TEM mode using an EDAX SiLi detector with 10 eV/channel and 51.2 µs processing time, to achieve 500 counts per second signals and 20–50% dead time. The SEAD patterns were integrated using Gatan DigitalMicrograph™ to refine the d-spacings of the studied quasicrystals.
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7

Nanomaterial Characterization Using FIB-SEM-TEM

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We used a FEI Nova 600 Nanolab DualBeam focused ion beam (FIB) and scanning electron microscope (SEM) for the sample preparation and lift-out. The sample thinning was finalized with an 8 kV, 19 nA Ga-ion beam. The analytical transmission electron microscopy (ATEM) analysis was performed on FEI Tecnai TF20 with super-twin objective lens, operated at 200 kV. The EDS data were collected in TEM mode using a EDAX SiLi detector with 10 eV/channel and 51.2 µs process time, to achieve 500 cps signal and 20–50% deadtime. The FIB and TEM facilities are in the Kavli Nanoscience Institute at Caltech.
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