The thickness of the thin film is monitored by profilometer (Bruker
DektakXT) which is ~300 nm. Both the AFM and Raman studies are conducted on the same GO thin film, homogeneously distributed on the Si substrate. A Raman spectrometer system (Witec
alpha 300 R) is used to irradiate the GO film with focused laser coming from 100X objective of a confocal microscope. An Nd:YAG continuous laser of 532 nm wavelength is used to irradiate the GO surface with varying laser power. Real time Raman signals are recorded which is discussed in detail in the manuscript. Surface deformation of the GO films is investigated by Bruker
Multimode AFM system in ‘tapping mode’ which reveals in-depth information about the shape and size of the deformed surface of GO films, showing the dependence on the irradiated laser power. Laser irradiations on the GO films as well as all characterizations are conducted in an ambient environment. Laser power is calibrated with the micro-meter scale, present in the laser source, using Thorlabs optical power meter
(PM100D). The calibrated laser power with the micro screw is shown in
Fig. S1. The morphology of the GO sample was characterized by JEOL
JSM-IT300 scanning electron microscope and JEOL
JEM2100 transmission electron microscope. FTIR spectroscope (Agilent
Cary 660 FTIR) was used to characterize the functionalization of the GO surface.
Kundu A., Rani R, & Hazra K.S. (2017). Graphene Oxide Demonstrates Experimental Confirmation of Abraham Pressure on Solid Surface. Scientific Reports, 7, 42538.