Omni λ300i

Powder XRD patterns of the as‐synthesized SAOCD were carried out on an XRD‐6100 (Shimadzu. Japan) X‐ray diffractometer with CuKα radiation (λ = 1.54178 Å). The morphology and element distribution of the samples were obtained by SEM (FEI Quanta 650 FEG) with energy dispersive X‐ray spectroscope fittings (EDAX ELEMENT). The TL curves were measured using a microcomputer thermoluminescence spectrometer (FJ427A1, Beijing Nuclear Instrument Factory) at a heating rate of 1 Κ s⁻¹. ML signals were collected in situ from a homemade tensile testing machine using a high‐throughput optical fiber. The ML spectra were recorded by a fluorescence spectrophotometer (Omni‐λ300i, Zolix Instruments Co., Ltd.) equipped with a CCD camera (iVac‐316, Edmund Optics Ltd.). The stress‐strain curve of SAOCD/PDMS elastomer was applied by a universal testing machine (Shimadzu AGS‐X‐500 N). The triboelectric potential was collected by using the electrostatic measuring probe (SK050, KEYENCE (Japan) Co., Ltd.) at a distance of 10 mm. The CL spectrum of SAOCD was detected on the modified Mp‐Micro‐S instrument attached to the SEM. High‐temperature environments were provided by the heating table (JF‐956A). All optical photos were taken by a digital camera (Canon EOS 77D).

The crystallographic features of the as-prepared UCNPs were examined by an X-ray diffractometer (XRD) with Cu K radiation at 40 kV and 40 mA (Bruke D8 Advance, Hangzhou, China). The morphology and size of the Y₂O₃:Er³⁺/Tm³⁺ UCNPs were characterized by transmission electron microscopy (TEM; Tecnai G2 F20, FEI, Changsha, China). The compositional elements of the UCNPs were measured by an energy dispersive spectrometer (EDS). For photoluminescence experiments, the 808 and 980 nm fiber coupled diode lasers (BWT K808DAHFN-25.00W, BWT K976DA3RN-30.00W, Changsha, China) were used as the excitation sources. Additionally, the generated UCL was collected and detected by a monochromator (Zolix Omni-λ300i, Changsha, China) and a photomultiplier (PMT). The photos of the UCL color were taken by a Complementary Metal Oxide Semiconductor (CMOS) sensor (Sony IMX519, Changsha, China). All the above photoluminescence measurements were performed at room temperature, and the test samples were prepared by dissolving the UCNPs in ethanol solution with a mass concentration of 0.5 mg mL⁻¹.