First, a photo patterned SU8 mask is applied on a Si-wafer. A 40 nm Al2O3 layer is deposited on the opposite face by atomic layer deposition (ALD) in a FlexAL (Oxford Instruments Plasma Technology). The wafer undergoes a silanization process to promote the adhesion of the polymers. Afterwards, four polymer layers are photo-patterned successively on top of the Al2O3: sacrificial layer, polyimide, hydrogel, and polyimide. On top of the polymer stack Ti–Cu–Ti (5–300–5 nm) layers are sputtered (with a HZM-P4, Von Ardenne) and photo patterned by a lift-off process (with AZ 5214E, MicroChemicals). Afterwards, an aperture is etched on the Si-wafer with 0.0225 or 0.04 mm2 area (depending on the design) with the Bosch Process (BP) in a PlasmaPro 100 ICP (Oxford Instruments Plasma Technology). The wafer is now diced into single samples in a SS10 (ACCRETECH (Europe)) dicing machine. Finally, the micro-coils are self-assembled, the soft magnetic wire is inserted and fixed in the coils, and then modified by Focussed Ion Beam (FIB) milling. This step was done in a CrossBeam XB 1540 (Zeiss) and an NVision40 (Zeiss). In both devices Ga+ ions of 30 kV were used for milling with ion currents up to some 10 nA. The devices were also used for SEM imaging.
Crossbeam 1540 xb
Manufactured by Zeiss
Sourced in Germany
The CrossBeam 1540 XB is a high-performance scanning electron microscope (SEM) and focused ion beam (FIB) system designed for materials analysis and sample preparation. It combines the imaging capabilities of a SEM with the precision milling and cross-sectioning functions of a FIB, enabling detailed observations and targeted sample modifications.
Automatically generated - may contain errors
Lab products found in correlation
Nvision 40, by Zeiss (1 mentions)
Az5214e, by MicroChemicals (1 mentions)
X maxn 80t detector, by Oxford Instruments (1 mentions)
Leo 1550vp, by Zeiss (1 mentions)
Jem 2200fs electron microscope, by JEOL (1 mentions)
Temcam xf416, by TVIPS (1 mentions)
Jem 2200fs microscope, by JEOL (1 mentions)
Axs d8 advance, by Bruker (1 mentions)
Omcl ac160ts, by Olympus (1 mentions)
Su3500, by Hitachi (1 mentions)
7 protocols using crossbeam 1540 xb
1
Fabrication of Micro-Coils with Soft Magnetic Wires
2
FE-SEM Characterization of 3D Tissue Cultures
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A field-emission scanning electron microscope (FE-SEM), part of a CrossBeam XB 1540 (Carl Zeiss, Oberkochen, Germany), with a resolution of 1.1 nm, was used for ultra-structural feature characterizations of the 3D tissue culture. To avoid charging, the sample was coated with a thin layer of chromium (a few nm), which does not alter the morphology of the tissue. An electron beam energy of 20 keV, which enhances the morphological contrast obtained with secondary electrons, and an aperture of 30 µm, which generates a narrow beam current for optimum resolution at high magnification, were used for imaging with a positive biased Everhart-Thornley detector.
3
Nanoscale Characterization of Nb-Ti Thin Films
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The surface microstructure of the Nb-Ti thin-film alloys along the library was characterised with a field emission scanning electron microscope (FE-SEM, Zeiss Leo 1550 VP, Jena, Germany). Images were acquired at a 3 kV acceleration voltage using the in-lens detector. With these experimental conditions, the surface grains of the Nb-Ti alloys could be best observed.
To shed light on the structure and chemistry of the specimens at the nanoscale, cross-sectional transmission electron microscopy (TEM) was applied. Characterisation was performed using a JEOL JEM-2200FS electron microscope (JEOL, Tokyo, Japan) operated at 200 kV. The TEM was fitted with an in-column Omega filter and a CMOS-based camera, TemCam-XF416 (TVIPS, Gauting, Germany). Images were captured utilising zero-loss filtering. Cross-sectional lamellae were prepared via focused ion beam (FIB) milling (CrossBeam 1540 XB, Zeiss, Germany). Before cutting, the samples were covered with an electron beam-stimulated Pt deposit, followed by an ion-stimulated Pt sacrificial layer to protect the surface. For qualitative elemental analysis, energy-dispersive X-ray spectroscopy (EDX) was performed in scanning (S)TEM mode utilising an X-MaxN 80 T detector from Oxford Instruments (UK). The data were processed with dedicated Aztec Version 4.0 software.
To shed light on the structure and chemistry of the specimens at the nanoscale, cross-sectional transmission electron microscopy (TEM) was applied. Characterisation was performed using a JEOL JEM-2200FS electron microscope (JEOL, Tokyo, Japan) operated at 200 kV. The TEM was fitted with an in-column Omega filter and a CMOS-based camera, TemCam-XF416 (TVIPS, Gauting, Germany). Images were captured utilising zero-loss filtering. Cross-sectional lamellae were prepared via focused ion beam (FIB) milling (CrossBeam 1540 XB, Zeiss, Germany). Before cutting, the samples were covered with an electron beam-stimulated Pt deposit, followed by an ion-stimulated Pt sacrificial layer to protect the surface. For qualitative elemental analysis, energy-dispersive X-ray spectroscopy (EDX) was performed in scanning (S)TEM mode utilising an X-MaxN 80 T detector from Oxford Instruments (UK). The data were processed with dedicated Aztec Version 4.0 software.
4
Nanomaterial Characterization using XRD, SEM, and TEM
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X-ray diffraction (XRD) analysis was performed with a Bruker AXS D8 Advance diffractometer employing a Bragg–Brentano geometry and Cu-Kα radiation and using a grazing incidence geometry (GIXRD). Surface imaging was done using Zeiss Cross Beam 1540XB field emission scanning electron microscope (FE-SEM) using an acceleration voltage of 5 kV. High-resolution transmission electron microscope (HR-TEM) images were obtained on a JEOL JEM-2200FS microscope operated at 200 kV. The HR-TEM samples were prepared on carbon-coated copper grids supplied by Quantifoil GmbH. The obtained nanostructures were analyzed with selected area electron diffraction (SAED), bright-field imaging, and zero-loss filtered high-resolution TEM.
5
Microscopic Analysis of Sample Morphology
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Ultra-high resolution field emission scanning electron microscope (UHR-FE-SEM, CrossBeam 1540 XB, Zeiss GmbH, Oberkochen, Germany) was used to analyze the morphology of the samples obtained, both the surface and the cross-section.
The film’s thickness was measured by a digital micrometer (3791G 0-150, Messzeuge, Spangenberg, Germany), recording 6 measurements for each sample.
The film’s thickness was measured by a digital micrometer (3791G 0-150, Messzeuge, Spangenberg, Germany), recording 6 measurements for each sample.
6
Influence of Fe2O3 Morphology on Kinetics
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Iron(iii ) oxide (99.98%) powder was purchased from Sigma-Aldrich. To prove the influence of sample morphology on the results of the kinetic analysis, a comparison of several samples with different morphologies and surface areas was conducted. Thus, the original Fe2O3 sample was annealed at 600, 700 and 800 °C for 3 hours.
The Brunauer–Emmett–Teller (BET) surface area of the iron oxides was determined on a Autosorb IQ (Quantachrome, USA) device. Scanning electron microscope (SEM) images were taken using a Carl Zeiss Crossbeam 1540xb (Germany) instrument. Particle size distributions were obtained using Fritsch particle sizer Analysette 22 (Germany). TPR measurements were carried out on an automated chemisorption analyzer ChemBET Pulsar TPR/TPD (Quantachrome Instr., USA). Sample powders (35–40 mg) were loaded into the quartz sample cell. To separate water forming during oxide reduction, a liquid nitrogen cold trap was used. Prior to the experiment, samples were annealed at 350 °C in a nitrogen flow for 30 minutes to degas and remove moisture. TPR curves were recorded under different temperature programs, at a flow rate of 50 mL min−1, under flow of 6% H2 + N2 and ambient pressure. Purity of gases was 99.995 vol%.
The Brunauer–Emmett–Teller (BET) surface area of the iron oxides was determined on a Autosorb IQ (Quantachrome, USA) device. Scanning electron microscope (SEM) images were taken using a Carl Zeiss Crossbeam 1540xb (Germany) instrument. Particle size distributions were obtained using Fritsch particle sizer Analysette 22 (Germany). TPR measurements were carried out on an automated chemisorption analyzer ChemBET Pulsar TPR/TPD (Quantachrome Instr., USA). Sample powders (35–40 mg) were loaded into the quartz sample cell. To separate water forming during oxide reduction, a liquid nitrogen cold trap was used. Prior to the experiment, samples were annealed at 350 °C in a nitrogen flow for 30 minutes to degas and remove moisture. TPR curves were recorded under different temperature programs, at a flow rate of 50 mL min−1, under flow of 6% H2 + N2 and ambient pressure. Purity of gases was 99.995 vol%.
7
Characterizing Sample Morphology via AFM and SEM
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The sample morphology after fabrication
was analyzed by means of AFM and scanning electron microscopy (SEM).
AFM topographies were acquired using a multimode/nanoscope V system
(Bruker, Germany). The instrument was operated in tapping mode using
silicon cantilevers (OMCL-AC160TS, Olympus, Japan) with a typical
resonance frequency of about 300 kHz. The nominal tip radius was 7
nm. The images were analyzed using the open source software Gwyddion.59 (link)SEM was carried out, acquiring secondary
electrons, with two instruments: a field emission microscope (CrossBeam
1540xb, Carl Zeiss, Germany) using an in-lens detector and a conventional
tungsten emitter microscope (SU3500, Hitachi, Japan). The accelerating
voltage was set at 20 and 10 kV, respectively.
was analyzed by means of AFM and scanning electron microscopy (SEM).
AFM topographies were acquired using a multimode/nanoscope V system
(Bruker, Germany). The instrument was operated in tapping mode using
silicon cantilevers (OMCL-AC160TS, Olympus, Japan) with a typical
resonance frequency of about 300 kHz. The nominal tip radius was 7
nm. The images were analyzed using the open source software Gwyddion.59 (link)SEM was carried out, acquiring secondary
electrons, with two instruments: a field emission microscope (CrossBeam
1540xb, Carl Zeiss, Germany) using an in-lens detector and a conventional
tungsten emitter microscope (SU3500, Hitachi, Japan). The accelerating
voltage was set at 20 and 10 kV, respectively.
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