A Keithley 2400 source meter and silicon photodiode (Hamamatsu S1133-14, Japan) calibrated by a PR650 spectradiometer (Photo Research) were used to measure Current–voltage–radiance characteristics of perovskite LEDs. Electroluminescence spectra were recorded by Horiba Jobin Yvon system, and used to calculate radiance and external quantum efficiency. All the devices were assumed as Lambertian emitter in the calculation. For measurement of operational stability, the Keithley 2400 source meter and photodiode (Hamamatsu S1133-14) was used to apply constant bias to record photocurrent response, respectively. Capacitance versus voltage measurement was carried out by using an Agilent 4284A LCR meter controlled by a LabView program. DC bias was swept from 0 to 2 V with 20 mV AC oscillation amplitude and 1 kHz frequency.
Keithley 2400
Manufactured by Hamamatsu Photonics
Sourced in Japan
The Keithley 2400 is a precision source-measure unit (SMU) that can be used to source and measure voltage, current, and resistance. It provides highly accurate and stable voltage and current sourcing, as well as measurement capabilities, across a wide range of scales.
Automatically generated - may contain errors
Lab products found in correlation
C9920 12, by Hamamatsu Photonics (3 mentions)
S1133 14, by Hamamatsu Photonics (1 mentions)
Agilent 4284a lcr meter, by Agilent Technologies (1 mentions)
Sr 3ar, by Topcon (1 mentions)
Cs 2000, by Konica Minolta (1 mentions)
Ihr320, by Hamamatsu Photonics (1 mentions)
Minolta cs 1000, by Konica Minolta (1 mentions)
H6780 20, by Tektronix (1 mentions)
Tds 2004c, by Tektronix (1 mentions)
Keithley 2400, by Konica Minolta (1 mentions)
5 protocols using keithley 2400
1
Perovskite LED Characterization Protocol
2
Fabrication and Characterization of Encapsulated OLEDs
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The OLEDs were fabricated by vacuum deposition process without exposure to ambient air. After fabrication, the devices were immediately encapsulated with glass lids using epoxy glue in a nitrogen-filled glove box (O2 ~ 0.1 ppm, H2O ~ 0.1 ppm). The indium–tin oxide surface was cleaned ultrasonically and sequentially with acetone, isopropanol and deionized water, then dried in an oven, and finally exposed to ultraviolet light and ozone for about 10 min. Organic layers were deposited at a rate of 1 Å/s. Subsequently, Liq and Al were deposited at 0.3 and 1 Å/s, respectively. The device area is ~ 0.04 cm2. The EQE and J-V-L measurements were performed using a Keithley 2400 source meter and an absolute external quantum efficiency (EQE) measurement system (C9920-12, Hamamatsu Photonics, Japan). For the device lifetime tests, the luminance and EL spectra of the driving devices in the normal direction were measured using a luminance meter (SR-3AR, TOPCON, Japan) under constant current density driving conditions with an initial luminance of 103 cd m−2.
3
OLED Fabrication and Characterization
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OLEDs were fabricated by vacuum depositing the materials at ca. 3.0 × 10−4 Pa onto ITO-coated glass substrates (sheet resistance of ca. 15 Ω/□). Before device fabrication, the ITO-coated glass substrates were cleaned in sequential ultrasonic baths of acetone, ethanol, and deionized water, dried in an oven, and then exposed to UV/ozone for about 30 min. After depositing the organic layers (deposition rates of 2–3 Å s−1), the devices were unloaded into a nitrogen-filled glovebox and affixed to metal masks that defined the cathode area. The devices were loaded back into the same evaporation chamber for deposition of a cathode of LiF (0.2 Å s−1) and Al (ca. 4 Å s−1). The emitting area of all the OLEDs was determined by the overlap of the two electrodes (0.04 cm2). The J–V–L characteristics were measured using a Keithley 2400 source meter in conjunction with an absolute EQE measurement system (C9920–12, Hamamatsu Photonics, Japan).
4
OLED Device Fabrication and Characterization
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The OLEDs were fabricated through vacuum deposition of the materials at ca. 2.0 × 10−4 Pa onto indium–tin-oxide-coated glass substrates having a sheet resistance of ca. 15 Ω per square. The indium–tin oxide surface was cleaned ultrasonically and sequentially with acetone, isopropanol and deionized water, then dried in an oven, and finally exposed to ultraviolet light and ozone for about 10 min. Organic layers and aluminum were deposited at a rate of 1–2 Å/s. Subsequently, LiF and Liq were deposited at 0.1–0.2 Å/s. The devices were exposed once to nitrogen gas after the formation of the organic layers to allow the fixing of a metal mask to define the cathode area. After fabrication, the devices were immediately encapsulated with glass lids using epoxy glue in nitrogen-filled glove boxes (O2–0.1ppm, H2O-0.1ppm). For all OLEDs, the emitting areas were determined by the overlap of two electrodes as 0.04 cm2. The J-V-luminance characteristics were evaluated using a Keithley 2400 source meter and an absolute external quantum efficiency (EQE) measurement system (C9920-12, Hamamatsu Photonics, Japan). Device operational stability was measured using a luminance meter (CS-2000, Konica Minolta, Japan) at a constant DC current at room temperature.
5
OLED Fabrication and Characterization
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OLEDs were fabricated
by depositing the organic and metal layer in a thermal evaporator
under 1 × 10–6 Torr onto patterned ITO glass
substrates, which were pretreated by O2 plasma cleaning.
Afterward, the OLEDs were transferred into a glovebox with a pure
N2 environment, encapsulated by coverglass with UV-epoxy,
and cured under UV radiation. Device performances of OLEDs, including
current density–luminance–voltage characteristics J–L–V, EQE,
PE and CE, EL spectra, and CIE 1931 coordinates, were measured by
a spectrometer (Minolta CS-1000) under various electrical driving
by a source meter (Keithley 2400). The setup of PLQY measurement consisted
of a xenon lamp and a monochromator (Horiba, iHR320), an integrating
sphere (Quanta-φ manual Rev C F-3029), a monochromator (Horiba,
iHR320), a photomultiplier tube (Hamamatsu, PMT), and software (FluorEssence).
The setup of TrPL measurement consisted of a 355 nm Nd-YAG picosecond
pulse laser (PicoQuant VisUV), a monochromator (Horiba, iHR320), and
a photomultiplier tube (Hamamatsu, PMT). The setup of TrEL measurement
consisted of a function generator (Agilent 33500B), a source meter
(Keithley 2400), a photomultiplier (Hamamatsu H6780-20), and an oscilloscope
(Tektronix TDS2004C).
by depositing the organic and metal layer in a thermal evaporator
under 1 × 10–6 Torr onto patterned ITO glass
substrates, which were pretreated by O2 plasma cleaning.
Afterward, the OLEDs were transferred into a glovebox with a pure
N2 environment, encapsulated by coverglass with UV-epoxy,
and cured under UV radiation. Device performances of OLEDs, including
current density–luminance–voltage characteristics J–L–V, EQE,
PE and CE, EL spectra, and CIE 1931 coordinates, were measured by
a spectrometer (Minolta CS-1000) under various electrical driving
by a source meter (Keithley 2400). The setup of PLQY measurement consisted
of a xenon lamp and a monochromator (Horiba, iHR320), an integrating
sphere (Quanta-φ manual Rev C F-3029), a monochromator (Horiba,
iHR320), a photomultiplier tube (Hamamatsu, PMT), and software (FluorEssence).
The setup of TrPL measurement consisted of a 355 nm Nd-YAG picosecond
pulse laser (PicoQuant VisUV), a monochromator (Horiba, iHR320), and
a photomultiplier tube (Hamamatsu, PMT). The setup of TrEL measurement
consisted of a function generator (Agilent 33500B), a source meter
(Keithley 2400), a photomultiplier (Hamamatsu H6780-20), and an oscilloscope
(Tektronix TDS2004C).
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