Alpha high frequency analyzer

EIS measurements were performed using Novocontrol alpha high-frequency analyzer (Hundsangen, Germany). Four individual EIS measurements were taken; surface-coated IDE, probe-immobilized IDE, and normal and mutated FLT3 gene target hybridized IDE. Each measurement was taken by immersing the chip’s active sensing area in 1× PBS buffer with 2 mM K₃(Fe(CN)₆)/K₄(Fe(CN)₆), dropped on top of the chips at RT. Intermediate washing steps were performed three times using PBST. The impedance spectra of the real and imaginary parts of impedance, Zs’ and Zs” respectively were obtained and recorded by sweeping the frequency of 0.1 Hz–100 kHz with an applied AC voltage of 10 mV RMS. Nonlinear curve fitting was performed for the obtained EIS results using Randles equivalent circuit using ZView. The obtained charge transfer resistance (R_ct) values were subsequently recorded.

EIS measurements are done using Novocontrol alpha high-frequency analyzer (Hundsangen, Germany). Four individual EIS measurements were taken for bare IDE chips, ZnOAu-Nanorod coated chips, probe immobilized chips and target hybridized chips. Each measurement is taken by immersing the chip’s active sensing area in 0.1 M PBS buffer (pH 7.4) containing a mixture of 2 mM K₃(Fe(CN)₆)/K₄(Fe(CN)₆), placed on top the chips at RT. The impedance spectra of the real and imaginary parts of impedance, Zs’ and Zs” respectively were obtained and recorded by sweeping the frequency of 1–100 MHz with an applied AC amplitude of 1 V RMS. Nonlinear curve fitting is performed for the obtained EIS results using Randles equivalent circuit through ZView software. The obtained charge transfer resistance (R_ct) values are subsequently recorded.