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Micro raman spectroscope

Manufactured by Renishaw

The Micro-Raman spectroscope is a laboratory instrument used for analyzing the chemical composition and molecular structure of materials. It employs the Raman effect, which involves the inelastic scattering of monochromatic light, typically from a laser source, to provide detailed information about the vibrational modes of molecules within a sample. The instrument is designed to focus the laser beam onto a microscopic area of the sample, enabling the analysis of small, localized regions with high spatial resolution.

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4 protocols using micro raman spectroscope

1

Characterizing Graphene-Based Nanocomposites

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SEM was carried out to observe the morphology of graphene/Cu foil and NPC/graphene as well as the thickness of the NPC film. An FEI Teneo scanning electron microscope with an operating voltage of 0.8 to 2.0 kV and a working distance of 2.5 to 7.0 mm was used. The samples were directly characterized without any conductive coating. Transmission electron microscopy (TEM) imaging of the NPC film and ED of the NPC/graphene film were conducted using an FEI Tecnai G2 Spirit microscope operating with a 120-keV incident electron beam.
Raman characterization was performed on graphene/Cu using a Renishaw micro-Raman spectroscope (457 nm, 2.33 eV, 50× objective). More than 10 spectra were collected with the mapping method for each sample. The Raman data were analyzed by curve fitting in MATLAB to extract the ID/IG, ID/ID′, and I2D/IG ratios. Before analysis, the background was subtracted from the Raman spectra.
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2

Characterization of CGF-Ecoflex Hybrid Morphology

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The morphologies of as‐written CGF and as‐transferred CGF‐Ecoflex hybrid were revealed with a field‐emission SEM (JEOl, JSM‐7600F). Raman spectra were collected with a micro‐Raman spectroscope (Renishaw Invia) using a 633 nm laser line with a power of 3 mW. XPS data were acquired using a PHI‐5400 equipment with Al Kα beam source (250 W). The binding energies were calibrated using C1s peak (284.6 eV) as reference. The Rs was measured using a four‐point probe meter (Advanced Instrument Technology, CMT‐SR2000N). The tensile tests were carried out using a mechanical testing machine (Instron 5566) with a load cell of 100 N. The test coupons (Figure S17, Supporting Information) were pulled uniaxially at a speed of 500 mm min−1 until breaking.
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3

Raman Characterization of Graphene Transferred on SiO2/Si

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Raman characterization was carried on graphene transferred onto the SiO2/Si wafer by the wet-transfer method. The N-SLG/Cu was spin-coated with a thin poly(methyl methacrylate) (PMMA) layer (950 PMMA A4, 4% in anisole; MicroChem Corp.). After the coating, the PMMA/N-SLG/Cu was annealed at 60°C for 30 min to remove the solvent. Then, the PMMA/N-SLG/Cu was floated on a 20% Na2S2O8 solution to remove the Cu foil. Following this, the floating film was transferred to deionized water to rinse the residual etchant and was scooped by SiO2/Si wafer. To increase the bonding of PMMA/N-SLG, the sample was annealed at 150°C and then 190°C for 10 min. Last, PMMA was removed by acetone leaving N-SLG on the SiO2/Si wafer for Raman characterization.
Single-point data collection and mapping were performed using Renishaw micro-Raman spectroscope equipped with a blue laser (λL = 457 nm, EL = 2.71 eV) and a green laser (λL = 532 nm, EL = 2.33 eV). Analysis of the Raman data was carried out using MATLAB. For calculation of the D and the G peak height, the background was subtracted from the Raman data using the least-squares curve fitting tool (lsqnonlin).
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4

Raman Characterization of Graphene on SiO2/Si

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Raman characterization was carried on graphene transferred onto the SiO2/Si wafer by the wet-transfer method28 (link). Single-point data collection and mapping were performed using Renishaw micro-Raman spectroscope (532 nm, 2.33 eV, ×100 objective). Analysis of the Raman data was carried out using MATLAB. For calculation of the D and the G peak height, the background was subtracted from the Raman data using the least-squares curve fitting tool (lsqnonlin).
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