The ZnO precursor was prepared by dissolving zinc acetate dihydrate (Zn(CH3COO)2·2H2O, Aldrich, 99.9%, 1.64 g) and ethanolamine (NH2CH2CH2OH, Aldrich, 99.5%, 0.5 g) in 2-methoxyethanol (CH3OCH2CH2OH, Aldrich, 99.8%, 10 g) under vigorous stirring at 60°C for 30 min to the hydrolysis reaction in air. The ZnO precursor solution was spin-coated on top of the AgNW embedded NOA 63 electrode. The films were annealed at 150°C for 10 min in air. The ZnO film thickness was approximately 40 nm. The ZnO-coated substrates were transferred into a nitrogen-filled glove box. A solution containing a mixture of PBDTTT-C:PCBM (10 mg:20 mg) was dissoved in 1,2-dichlorobenzene (1 mL). The PBDTTT-C, and PCBM used in this study were purchased from 1-material and Nano-C, respectively. The active layer was then spin-coated onto the ZnO-coated AgNW embedded NOA 63 electrode at 1000 rpm for 40 s after passing through a 0.20 μm PTFE syringe filter and the thickness of the active layer was about 100 nm. The PEDOT-PSS (Clevios 4083) diluted using isopropyl alcohol (IPA), with the ratio of PEDOT-PSS:IPA being 1:10, were deposited onto the active layer at 5000 rpm 60 s in a glove box. Finally, the Ag metal as top electrode was deposited through a shadow mask by thermal evaporation in a vacuum of about 5 × 10−6 Torr. The device area, defined through a shadow mask, was 0.38 cm2.
Ch3och2ch2oh
Manufactured by Merck Group
Sourced in France
CH3OCH2CH2OH is a chemical compound that can be used as a laboratory reagent. It is a colorless, volatile liquid with a characteristic odor. The compound has the chemical formula CH3OCH2CH2OH and is commonly known as 2-methoxyethanol or methyl cellosolve.
Automatically generated - may contain errors
Lab products found in correlation
Zn ch3coo 2 2h2o, by Merck Group (2 mentions)
Nh2ch2ch2oh, by Merck Group (2 mentions)
Bis acetylacetonato dioxomolybdenum, by Merck Group (1 mentions)
Ethanolamine, by Merck Group (1 mentions)
Zinc acetate dehydrate, by Merck Group (1 mentions)
Ch3co2nh4, by Merck Group (1 mentions)
Aluminum chloride alcl3, by Merck Group (1 mentions)
Nicl2 6h2o, by Merck Group (1 mentions)
Ti och ch3 2 4, by Merck Group (1 mentions)
Pbbr2, by Merck Group (1 mentions)
Sodium hydroxide (naoh), by Merck Group (1 mentions)
Ch3nh2, by Merck Group (1 mentions)
7 protocols using ch3och2ch2oh
1
Fabrication of ZnO-Coated AgNW-Based Organic Photovoltaics
2
Fabrication of ZnO-Based Organic Solar Cells
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The ZnO precursor was prepared by dissolving zinc acetate dihydrate (Zn(CH3COO)2·2H2O, Aldrich, 99.9%, 1 g) and ethanolamine (NH2CH2CH2OH, Aldrich, 99.5%, 0.5 g) in isopropyl alcohol (CH3OCH2CH2OH, Aldrich, 99.8%, 50 g) via stirring for 24 h. The PTB7-Th:PC70BM solution was prepared by blending PTB7-Th (1-material) and PC70BM (Nano-C) at a ratio of 1:2 in chlorobenzene solvent with 1,8-diiodooctane additive (3% by volume) to obtain a total concentration of 12 mg ml−1. The MoO3 solution was prepared by dissolving bis(acetylacetonato) dioxomolybdenum (Sigma Aldrich) in a cosolvent of methanol and 1-butanol.
3
Fabrication of IGZO Thin-Film Transistors
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The sol-gel IGZO solution was prepared by dissolving indium nitrate hydrate (In(NO3)3•H2O, Aldrich), gallium nitrate hydrate (Ga(NO3)3•H2O, Aldrich), and zinc methacrylate (Zn(CH2CH3COO)2, Aldrich) precursors in 2-methoxyethanol (CH3OCH2CH2OH, Aldrich). The molar ratio of In, Ga, and Zn was 4:1:2 while the total molar concentration of metals is 0.25 M. All solutions were stirred for 1 day at room temperature before spin-coating on the substrate. Heavily doped Si wafer was prepared as the bottom gate and the 100-nm-thick thermal silicon nitride (SiNx) was used as the gate dielectric. Samples were firstly treated with UV/Ozone for 10 minutes. IGZO films were spin-coated on the substrate with 4000 rpm for 40 s.
4
Fabrication of Organic Solar Cells
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PTB7-Th (One Materials) and PM6, Y6 (Derthon) were used without further purification. Prior to the solution process, the ITO/glass substrates were cleaned by sequential sonication using detergent, de-ionized water, acetone and isopropanol for 15 min each. After sonication, UV-ozone treatment was performed for 10 min. Then, the ZnO precursor was dissolved in 2-methoxyethanol (CH3OCH2CH2OH, Sigma-Aldrich, 1 mL) with zinc acetate dehydrate (Sigma-Aldrich, 0.1 g) and ethanolamine (Sigma-Aldrich, 0.028 mg) with stirring overnight. The prepared solution was spin-coated on the cleaned substrate, and then heat-treated at 200°C. for 30 min. 18 mg/mL PTB7-Th:Y6 (1:1.4 wt %) mixed solution dissolved in chloroform with 1 vol % diphenyl ether added and 15 mg/mL dissolved in chloroform with 0.5 vol % 1-Chloronaphthalene added A PM6:Y6 (1:1.2 wt %) mixed solution was spin-coated (150 nm, 110nm) on ZnO on different substrates. Finally, a MoO3 (9nm) electrode and an Ag (100nm) electrode were sequentially thermally deposited through a shadow mask in a vacuum of 2.0 × 10 −6 Torr.
5
Synthesis of Multicomponent Metal Oxide Precursor Solutions
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Zinc acetate dihydrate (Zn(CH3COO)2 ·2H2O, product from Mumbai, India) and ammonium acetate (CH3CO2NH4, product from Tokyo, Japan) precursors from Sigma Aldrich (99.999%) were dissolved into the solvent of 2-methoxyethanol (CH3OCH2CH2OH, product from Lyon, France) in order to synthesize 0.1 M zinc oxide (ZnO) solution. A 0.2 M aluminum oxide (Al2O3) precursor solution was made by dissolving aluminum chloride (AlCl3,) (Sigma Aldrich, 99.999%, product from St. Louis, MO, USA) into a mixed solvent of acetonitrile and ethylene glycol. Consequently, 0.1 M of yttrium oxide (YOx) precursor solution was prepared by dissolving Yttrium (III) nitrate hexa-hydrate (Y(NO3)3 · 6H2O, product from St. Louis, MO, USA) in 2-methoxyethanol. All of the precursor solutions were prepared under an N2 environment and then stirred at least 2 h to obtain a transparent solution. A 0.45 μm polytetrafluoroethylene (PTFE) filter was used to get the desired precursor solutions.
6
Fabrication of Transparent Semiconductor Films
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The 0.25 M sol-gel InO solution was prepared by dissolving indium nitrate hydrate (In(NO3)3 ⋅ H2O, Sigma-Aldrich) and methoxyethanol (MOE) (molar ratio In:MOE = 1:2) into 1-propanol. The solution was aged under stirring for 24 hours at room temperature to obtain a stable homogeneous solution.
The sol-gel IGZO solution was prepared by dissolving indium nitrate hydrate (In(NO3)3 ⋅ H2O, Sigma-Aldrich), gallium nitrate hydrate (Ga(NO3)3 ⋅ H2O, Sigma-Aldrich), and zinc methacrylate (Zn(CH2CH3COO)2, Sigma-Aldrich) precursors in 2-methoxyethanol (CH3OCH2CH2OH, Sigma-Aldrich). The molar ratio of In, Ga, and Zn was 4:1:2, and the total molar concentration of metals was 0.25 M. All solutions were aged under stirring for 24 hours at room temperature to obtain stable homogeneous solutions.
Solutions were filtered (Teflon filters with 0.2 μm pores) and deposited on freshly chemically patterned substrates via spin-coating. Thermal annealing (80 °C, 1 hour) was conducted to remove completely the solvent and crosslink the structures.
The sol-gel IGZO solution was prepared by dissolving indium nitrate hydrate (In(NO3)3 ⋅ H2O, Sigma-Aldrich), gallium nitrate hydrate (Ga(NO3)3 ⋅ H2O, Sigma-Aldrich), and zinc methacrylate (Zn(CH2CH3COO)2, Sigma-Aldrich) precursors in 2-methoxyethanol (CH3OCH2CH2OH, Sigma-Aldrich). The molar ratio of In, Ga, and Zn was 4:1:2, and the total molar concentration of metals was 0.25 M. All solutions were aged under stirring for 24 hours at room temperature to obtain stable homogeneous solutions.
Solutions were filtered (Teflon filters with 0.2 μm pores) and deposited on freshly chemically patterned substrates via spin-coating. Thermal annealing (80 °C, 1 hour) was conducted to remove completely the solvent and crosslink the structures.
7
Perovskite Solar Cell Fabrication
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We used patterned indium-doped tin oxide (ITO) coated glass substrates (15 Ω cm−2), lead iodide (PbI2, Sigma Aldrich, 99.9%), lead bromide (PbBr2, Sigma Aldrich, 99.99%), [6,6]-phenyl-C61-butyric acid methyl ester (PCBM, Solenne BV), PEDOT:PSS (Clevios F HC Solar, SCA 418-12), nickel chloride hexahydrate (NiCl2·6H2O, Sigma Aldrich, 99.9%), cesium iodide (CsI, Sigma Aldrich, 99.99%), and sodium hydroxide (NaOH, Sigma Aldrich, ≥98%). Methyl ammonium bromide (MABr), methyl ammonium iodide (MAI) and formamidinium iodide (FAI) were synthesized in our lab, as mentioned in the synthesis of organic halides. Titanium(iv ) isopropoxide (Ti[OCH(CH3)2]4, Sigma Aldrich, 99.9+%), isopropanol, hydroiodic acid (HI, 57 wt% in H2O), hydrobromic acid (HI, 57 wt% in H2O), methylamine (CH3NH2, Aldrich, 33 wt% in absolute ethanol), aluminum, N,N-dimethylformamide (DMF, anhydrous, Sigma Aldrich), dimethylsulfoxide (DMSO, Anal. R. VWR chemicals, 99.5%), acetone, ethanol, Helmanex® detergent, chlorobenzene, 2-methoxyethanol (CH3OCH2CH2OH, Sigma Aldrich, 99.9%) and ethanolamine (H2NCH2CH2OH, Sigma Aldrich, 99%) were also used.
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