Ultima 4 x ray diffraction system

PXRD patterns were measured by Rigaku Ultima IV X-ray diffraction system (Rigaku, Tokyo, Japan) in the θ/2θ scan mode with Cu K-α radiation at 40 kV and 40 mA. The sample was loaded in a small disc-like container and its surface was carefully flattened. Diffraction patterns were collected in the 2θ range after a run in the range of 5 to 50° with 0.02° step size at a rate of 2°/min.

The crystallinity of the TCP-CMC ceramic bioink after sintering was determined using XRD analysis. For this purpose, each sintered sample was ground to a fine powder, loaded onto a glass holder, and analyzed using an Ultima IV X-ray diffraction system (Rigaku, Tokyo, Japan). Pertinent spectra were collected from 20° to 60° (2θ) at a resolution of 0.02°.

The microscopic surface morphology and cross-sectional morphology of the substrates with different treatments were collected with field emission SEM (HITACHI, SU8020). The polarized NIR imaging system was used to visualize the macroscopic defects and internal domain distribution in the SCs, which consists of a 980 nm infrared light source coupled with an optical microscope, a CCD camera, and infrared polarizers. The contact angle data for different substrates were obtained by Dataphysics OCA20 equipment. The SCLC measurement of the SCs was performed by a Keithley 2400 source meter in an N₂-filled glove box. For F-gel-SCs, the trap-filled limit voltage (V_TFL) is 0.104 and 0.28 V in electron- and hole-only devices with crystals thicknesses of 130 and 180 µm, respectively; and for SAM-SCs, the V_TFL is 0.34 and 0.60 V in electron- and hole-only devices with crystals thicknesses of 130 and 150 µm, respectively. The μτ measurement of the 620-μm thick F-gel-SC and 610-μm thick SAM-SC was performed by a Keithley 2400 source meter with a 365 nm UV Led with a power density of ~0.6 mW cm⁻² in the N₂-filled glove box. The XRD spectra were obtained using an X-ray diffractometer (Empyrean) equipped with a Cu tube operated at 40 kV and 30 mA. The single-crystal rocking curves were tested by a Rigaku Ultima IV X-ray diffraction system with Cu Kα radiation (λ = 0.154056 nm).