The optical transmission was carried out by a double-beam spectrophotometer (
U-3900,
U-3900, Hitachi, Ltd., Tokyo, Japan). The surface morphology was measured by an atomic force microscope (AFM; nanonaviSPA-400 SPM, SII Nano Technology Inc., Chiba, Japan). The AFM measurement mode used was the tapping mode. The parameters of the AFM tip (Tap150AL-G, Innovative Solutions Bulgaria Ltd., Sofia, Bulgaria) were resonant frequency: 150 KHz and force constant: 5 N/m. The measurement geometry was rectangle and the acquisition time was 4 min. Fourier Transform Infrared Spectroscopy (FTIR) was carried out by the Nicolet 5700. The chemical composition of the thin film was analyzed by X-ray photoelectron spectroscopy (XPS,
Thermo Scientific K-Alpha+, Thermo Fisher Scientific Inc., Waltham, MA, USA). The crystal structure of the thin film was investigated by X-ray diffraction (XRD,
Rigaku D/max-rB, Rigaku Corporation, Tokyo, Japan). The electrical properties were measured by a semiconductor parameter analyzer (
Keithley 4200, Tektronix Inc., Beaverton, OR, USA).
The field-effect mobility (
μ) and
SS were extracted by using the following equations [13 (
link)]
where
W and
L are the channel width and length, respectively.
Ci is the capacitance per unit area of the insulator;
Vth is the threshold voltage; and
VG is the gate voltage.
Ding X., Yang B., Xu H., Qi J., Li X, & Zhang J. (2021). Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors. Nanomaterials, 11(10), 2552.