Nanolab g3 uc

The selected small single crystals were shaped and reduced in size by focused ion beam (FIB) milling (Helios Nanolab G3 UC, FEI) for the structural characterization and in-situ TEM observation. in-situ TEM characterization for structural evolution was carried out by transmission electron microscopy (Talos F200s, FEI) and a double-tilt TEM-STM electrical holder provided by ZEPTools Technology Company. The atomic resolution HAADF-STEM images were obtained by a double C_S-corrected transmission electron microscopy (Titan Themis G2 60–300, FEI). A continuous series of drift-corrected images were averaged to reduce scanning noise and sample drift during the acquisition process.

Transmission electron microscopy (TEM) samples were prepared by focused ion beam (FIB), using a FEI Helios NanoLab G3 UC dual-beam focused ion beam and a scanning electron microscope. The voltage and current during sample preparation were 5~30 kV and 41 pA~10 nA, respectively. A Tecnai G² 20 transmission electron microscope and a Talos F200X field emission transmission electron microscope equipped with the EDS detector were employed to observe the microstructure of the near-surface deformed layers on the alloy samples subjected to hot rolling under different conditions. The morphology of the corroded surface was observed by a SIRION200 field emission scanning electron microscope equipped with the EDS detector.

Scanning electron microscopy (SEM) and scanning-transmission electron microscopy (STEM) were performed at 30 kV on a Helios NanoLab G3 UC instrument (FEI, USA) with a detection system containing a TLD detector and a STEM ADF detector. A drop of EtOH diluted MSN suspension was dried on a carbon-coated copper grid at room temperature for several hours before SEM/STEM observation. Dynamic light scattering (DLS) measurements were performed on a Malvern Zetasizer-Nano instrument equipped with a 4 mW He-Ne laser (633 nm). Nitrogen sorption analysis was performed on a Quantachrome Instrument NOVA 4000e at 77 K. Samples (15 – 20 mg) were degassed at 120 °C under vacuum (10 mTorr) one day before measurement. Pore size distribution curves were obtained based on non-local density functional theory (NLDFT) procedures provided by Quantachrome, using the adsorption branch of N₂ on silica.

The cross-sectional and interfacial structure of S/O/W emulsions were observed using cryo-scanning electron microscopy (Cryo-SEM) (Helios NanoLab G3 UC, FEI, Hillsboro, OR, USA) based on a method reported previously to obtain more intuitive information [17 (link)]. Emulsion samples were immersed into liquid nitrogen and then transferred to a cryo-preparation chamber (PP3010T, Quorum Technologies, Lewes, U.K.) under vacuum. After freeze-fracturing and high vacuum sublimation to sublimation at −95 °C for 10 min to unbound water, and then the samples were sputter-coated with platinum and imaged using SEM. The observation was carried out at a distance between 3 and 5 mm with TLD detection at 2 kV.

Cryo-SEM (Helios NanoLab G3 UC, FEI, Hillsboro, OR, USA) was employed in the examination of the interfacial structure. Samples were first prefrozen in liquid nitrogen, then transferred to freezer preparation chamber (PP3010T, Quorum Technologies, Lewes, UK). Freeze-fracturing, vacuum sublimation, then sputter-coated with platinum were completed under the vacuum condition. Finally, the samples were transferred to scanning electron microscope (SEM) for observation.

The microstructural features of the Ti-45Zr alloy were characterized using electron microscopes. Scanning electron microscope (SEM, FEI Helios NanoLab G3 UC) equipped with energy dispersive spectrometry (EDS, Team Octane Plus), electron probe microanalysis (EPMA, JXA-8530F), and transmission electron microscope (TEM, JEM-2100F). The TEM samples were prepared using the precision ion polishing system (PIPS) at a voltage of 5 kV/2 kV and an incident angle of 3–7°.

Focused ion beam scanning electron microscopy (FIB-SEM) images were collected on a FEI Helios NanoLab G3 UC scanning electron microscopy. The wafers of interest were placed on aluminium SEM stubs using a conductive carbon tape on the back-side of the wafer. For SEM images, the accelerating voltage was set to 2 kV and the current to 0.10 nA and the backscattered electron images were collected with a through-lens-detector to take full advantage of the strong Z-contrast between LaOCl, the formed polyethylene and the Si(100) background. EDX elemental mapping was performed with a silicon drift detector (SDD) X-MAX from Oxford Instruments. Prior to the milling of the region of interest with the focused ion beam a 3 µm thick Pt layer was deposited on top of the region of interest. The focus ion beam accelerating voltage was set at 30 kV and the current for both milling and cleaning at 0.43 nA. The milling was performed to create a trench perpendicularly to the surface and roughly at the centre of a spherical cap. After the milling step, the cross-section was cleaned with Ga ions before collecting the backscattered electron images.