Mfp 3d sa

The absorption of P3HT and PTT-DTNT-DT were measured by a UV-1800 spectrophotometer (Shimadzu Co., Kyoto, Japan). The current density-voltage (J-V) curves were measured through a computer controlled by a Keithley 2400 source meter. The external quantum efficiency (EQE) of the devices were determined with an incident photon to charge carrier efficiency (IPCE) setup (7-SCSpecIII, Beijing 7-Star Optical Instruments Co., Beijing, China). The morphologies were observed by using an atomic force microscope (Asylum Research, MFP-3D-SA, Santa Barbara, CA, USA). The electrochemical impedance measurements were measured using an electrochemical workstation (CHI660E, Shanghai Chenhua, Shanghai, China). The contact angle was obtained by using a contact angle instrument (Kruss, model DSA100, Hamburg, Germany).

The friction tests were conducted by MFP3D SA (Asylum Research) AFM in lateral force mode under ambient atmosphere, at a temperature of 26±2 °C and with a relative humidity of 18±3%. The friction tests under different atmospheres were conducted by NT-MDT AFM with a chamber to control the atmosphere up to 51% relative humidity.
The normal spring constant of the microsphere probe prepared by the tipless cantilever (Nanosensor TL-FM) is 2.5±0.5 N m⁻¹. Friction force was measured by the half width of the lateral force loop evaluated for 16 scan lines under each load, and the normal spring constant of the cantilever was calibrated using the thermal noise method. All the experiments presented in Fig. 3 were conducted with the same scan size of 1 μm in reciprocating mode by disabling the slow scan direction, with a scan rate of 2 μm s⁻¹. Bulk h-BN (from XFNANO) was used to evaluate friction between heterostructure of graphene and h-BN.
In order to derive the lateral force from the voltage signal, the lateral spring constant of microsphere probe was calibrated using a diamagnetic lateral force calibrator34 , which is estimated to be 76.64 μN V⁻¹ for graphene-coated SiO₂ microsphere probe and 79.09 μN V⁻¹ for bare SiO₂ microsphere probe.

Imaging was performed using an Asylum Research MFP3D-SA operated in AC (tapping) mode. The samples were prepared on n-doped Si substrates functionalised with a monolayer of MPTMS prior to the deposition of CuNPs. Image analysis was performed using the in-built particle analysis option of Asylum Research software, which generates histograms of particle size distribution. The raw images were flattened using the magic mask option with a flatten order of 1.

Atomic force microscopy (AFM) was used to characterize the topography of the PEMs. The AFM measurements were carried out at ambient conditions (≈40% RH) with the MFP-3D SA (Asylum Research, Oxford Instruments, Scotts Valley, CA, USA). The cantilevers used were the AC160TS-R3 with a silicon probe and a tip diameter of 7–8 nm, also from Asylum Research. To determine the roughness of the PEMs, images of 25 µm² were taken at three different positions of the sample, and the roughness was determined from nine randomly selected 1 µm² areas of the image. The roughness is defined as the root mean square (RMS) of height deviations of the surface mean plane. The depicted error bars correspond to the standard deviation of the 27 spots measured. For PEMs with surface patterns with a correlation length in the µm range, the roughness was determined on the whole 25 µm² area. In all cases, the two different roughness measurements (1 µm², 25 µm²) led to similar values.

Raman and PL spectra were taken by a LabRAM HR Evolution system (HORIBA Co. Ltd., Paris, France) with a 532 nm laser. The Raman spectroscopy parameters were a diffraction grating of 1800 gr/mm, a focal length of 800 mm, a Raman frequency shift range of 50–8000 cm⁻¹, and a spectral resolution of ≤0.65 cm⁻¹. The morphology of fabricated devices and the morphology of as-grown Sm-doped MoS₂ were observed by a fluorescent inverted microscope (LeicaDMI6000B, Leica, Hesse-Darmstadt, Germany), and the thickness of few-layer flakes was characterized by AFM (MFP-3D-SA, Asylum Research, Santa Barbara, CA, USA) and Raman spectroscopy. The electrical properties of all the FET devices were measured using a Keithley 4200 (Tektronix, Beaverton, OR, USA) semiconductor parameter analyzer at room temperature (under dark conditions). XPS was conducted on a Thermo Scientific^TM K-Alpha^TM+(Thermo Scientific, Waltham, MA, USA) spectrometer equipped with a monochromatic Al Kα X-ray source (1486.6 eV) operating at 100 W. Samples were analyzed under vacuum (p < 10⁻⁸ mbar) with a pass energy of 150 eV (survey scans) or 25 eV (high-resolution scans). All peaks would be calibrated with C1s peak binding energy at 284.8 eV for adventitious carbon. The experimental peaks were fitted with the Avantage software. TEM images were obtained with an FEI Talos F200X (Thermo Scientific, Waltham, MA, USA)