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Invia spectrometer

Manufactured by Renishaw
Sourced in United Kingdom

The InVia spectrometer is a versatile laboratory instrument designed for Raman spectroscopy analysis. It provides high-resolution measurement capabilities to researchers and scientists. The core function of the InVia spectrometer is to capture and analyze the Raman scattering of light interacting with a sample, enabling detailed characterization of its molecular structure and composition.

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67 protocols using invia spectrometer

1

Raman Spectroscopy of Ignimbrite Colonization

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For point Raman measurements, a Renishaw InVia spectrometer (Renishaw, Wotton-under-Edge, UK) was employed with a Leica 50x magnification objective (NA/0.75). A far-red 785 nm line of a diode laser was employed with the following acquisition parameters: 3 s–5 s exposure time, 10 accumulations, and 30 mW laser power. A 514.5 nm green excitation laser wavelength was used for the resonance Raman analyses of the carotenoids. The acquisition parameters were set as follows: 1 s exposure time, 10 accumulations, and 1.25 mW laser power.
For the Raman imaging analyses, the same Renishaw InVia spectrometer was used, employing its streamline (linefocus) mode. A flattened transect of the ignimbrite specimen, with visually evident green colonization about 1 mm below the surface, was adjusted under the microscope to obtain a consistent focal plane. Then, the selected area was subjected to mapping. For imaging of the carotenoids, a 5x magnification objective (NA/0.12) and Ar laser line at 514.5 nm was employed with 12 mW source power, 3 s exposure time, and a spectral range of 250–2100 cm−1. For detailed mapping of the carotenoids, the same laser line was employed with a 20x magnification objective (NA/0.40), 2.5 mW laser power, and 4 s exposure time. A 785 nm laser line and 20x magnification objective was used for imaging of phycobiliproteins, using 150 mW laser power, and 5 s exposure time.
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2

Optical Characterization of 2D Materials

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Raman and photoluminescence spectra were collected using a Renishaw inVia spectrometer equipped with a 532 nm laser at a power of 5 mW. The spatial maps were collected under a 100× objective using a grating of 1800 lines per mm, which provides a resolution of ∼1.5 cm−1. Low-temperature photoluminescence and reflectance contrast measurements were performed using a continuous-flow liquid helium cryostat and a custom-build micro-photoluminescence setup equipped with a 0.5 m spectrometer (SP-2-500i, Princeton Instruments) with a nitrogen cooled CCD camera (PyLoN:100BR, Princeton Instruments).
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3

Comprehensive Materials Characterization Protocols

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XRD patterns were collected through an XRD‐7000S diffractometer equipped with a Cu Kα1 Radiation (λ = 1.5406 Å). Scanning electron microscopy observations were performed on a JEM7600F microscope at 15 kV. TEM observations were carried out on a JEOL2100 microscope at 200 kV. Raman spectra were recorded on a Renishaw Invia spectrometer by using Ar+ laser of 514.5 nm. The nitrogen adsorption and desorption isotherms were recorded at 77 K by using a Micromeritics ASAP 2020 analyzer and the surface area was calculated using the BET method. XPS spectra were recorded on an Axis Ultra DLD system with a monochromatic Al Kα X‐ray source.
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4

Raman Spectroscopy of Material Samples

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Raman spectra were obtained on the InVia spectrometer (Renishaw, UK) equipped with the DM 2500M microscope (Leica, Germany) with a 50× objective. For excitation, the lasers with wavelengths of 532 and 785 nm and a power of 100 mW were used; the spectral resolution was 2 and 1 cm−1, respectively. To prevent changes in the samples, only 5% of the full laser power and a 50% beam defocusing were applied.
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5

Characterization of HfS2-rGO and HfP-rGO Catalysts

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Crystals of the prepared HfS2-rGO NS and HfP-rGO NS catalysts were analyzed by powder X-ray diffraction (XRD) using a Bruker D8 advanced diffractometer with Cu Kα radiation (λ = 1.5418 Å). Raman spectra of HfS2-rGO NS and HfP-rGO NS were recorded using a Renishaw inVia spectrometer with 532 nm laser excitation. Morphologies of the HfS2-rGO NS and HfP-rGO NS catalysts were captured by scanning electron microscopy (SEM), and the elements in the catalysts were distinguished by elemental mapping techniques using a Hitachi (S-4800) SEM. The in-depth morphology of the prepared catalysts was further examined by transmission electron microscopy (TEM) and selected area electron diffraction tests using a Tecnai (20 U-TWIN) TEM. The elemental composition and the binding energies of the HfS2-rGO NS and HfP-rGO NS were detected using a Thermo Fisher Scientific ESCALAB 250Xi X-ray photoelectron spectrometer (XPS) with Al Kα radiation.
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6

Raman Spectroscopy for Material Analysis

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Raman spectra were recorded with an inVia spectrometer (Renishaw, UK) equipped with an optical microscope (Leica, Wetzlar, Germany) and a motorized sample stage. The excitation beam from a diode laser emitting at 532 nm was focused on the sample using a 50× objective. The laser power at the sample surface was 3.2 mW. The Raman Stokes signal was dispersed with a diffraction grating (2400 grooves/mm), and the data were recorded using a Peltier-cooled charge-coupled device (CCD) detector (1024 × 256 pixels). This system yields a spectral resolution of about 1 cm−1. Silicon was employed to calibrate the Raman setup in both Raman wavenumber and spectral intensity.
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7

Raman Spectra Acquisition Protocol

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The Raman spectra were acquired on an InVia spectrometer from Renishaw LTD equipped with a solid state laser source emitting at 457.9 nm. A 50 X, 0.48 NA long working distance microscope objective was used for illumination and collection in back scattering configuration. Acquisition time was set at 10 s with 12 accumulations per spectrum. Laser density at the focus was ~6 mW/μm2. Each spot was pre-photobleached by illuminating for 6–8 minutes at this power density prior to each spectral acquisition, to lower fluorescence background contribution. Fluorescence in the green/yellow range is mostly due to the aldehyde fixative. The Raman features become more evident as the background decreases. After 8 minutes, the baseline and Raman spectral features display stable intensity.
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8

Raman Spectroscopy Analysis of Samples

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Raman spectroscopy (Renishaw inVia spectrometer) was used in the range of 300–3500 cm−1, recording 5 times for 10 seconds of each accumulation, with a wavelength of 532 nm, green laser line in a backscattering configuration using a microscope (100× objective, 100% power, an acquisition time of 10 s), which had been excited from an argon ion laser. The samples were subjected on Al foil in order to remove the fluorescence background48 ,49 .
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9

Raman Spectroscopy of Samples

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Raman spectra were recorded on a Renishaw In Via spectrometer with laser wavelength of λ = 514 nm (Ar, 50 mW). Sample investigations were performed in backscattering geometry mode using a confocal microscope Leica DMLM (100´ lens) at room temperature in air, with capacity varied via ND (neutral density) filters in the range of 0.0005–15%. Focus distance was 250 mm, and the size of the laser beam was 20 µm. The CCD camera (1024 × 368 pixels) was used as a detector. Scale calibration was conducted using monocrystalline silica (521.5 cm−1) as a standard sample. WiRE 3.4 software was used for data processing.
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10

Raman Spectroscopic Analysis of Dried Samples

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These were made with dried samples on fused silica, by using a Renishaw inVia spectrometer with a 50x/0.5 N.A. long working distance objective lens. The laser excitation was at 532 nm, the power was 0.3 mW, and the detection time was 60 s.
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