TEM images were obtained using a JEOL JEM-ARM 200 F system. A Schottky field-emission electron beam was generated at 80–200 kV (magnification: 50 to 2,000,000 × , resolution: 0.1 nm). A focused ion beam (JIB-4601F) was used on electronically transparent samples that were obtained using a Disco 321 DAT dicing saw.
Jem arm200f system
Manufactured by JEOL
Sourced in Japan
The JEM-ARM200F system is an advanced transmission electron microscope (TEM) designed for high-resolution imaging and analysis. It features an aberration-corrected electron optics system, allowing for improved spatial resolution and enhanced analytical capabilities. The core function of the JEM-ARM200F is to provide researchers with a powerful tool for the study and characterization of materials at the atomic scale.
Automatically generated - may contain errors
Lab products found in correlation
Jem 2100f, by Zeiss (1 mentions)
Titan cubed themis g2 300, by JEOL (1 mentions)
Icpoes730, by Agilent Technologies (1 mentions)
Supra 55, by Zeiss (1 mentions)
Quanta 3d feg, by Thermo Fisher Scientific (1 mentions)
Fesem, by Thermo Fisher Scientific (1 mentions)
Diffractometer, by Rigaku (1 mentions)
4 protocols using jem arm200f system
1
High-Resolution Imaging of Transparent Samples
2
Comprehensive Material Characterization
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The morphology of the sample was
characterized by SEM (ZEISS SUPRA 55, Germany), TEM (JEM-2100F), and
HR-TEM. Energy-dispersive X-ray spectroscopy (EDX) was conducted with
an energy-dispersive X-ray detector in the ZEISS SUPRA 55 SEM system.
HAADF-STEM images were obtained by using an aberration-corrected cubed
FET Titan Cubed Themis G2 300 or JEM-ARM200F system (JEOL, Tokyo,
Japan). The metal content was determined by inductively coupled plasma
optical emission spectrometry (ICP-OES, Agilent ICPOES730). Raman
spectra were measured through the LabRAM HR800 spectrometer (473 nm
excitation laser source). XPS measurements were carried through a
Thermo Scientific ESCALab 250Xi instrument with monochromatic Al Kα
X-ray radiation. Nuclear magnetic resonance spectroscopy (1H NMR, AVANCE III HD 400) was used to determine the yield and purity
of the final products.
characterized by SEM (ZEISS SUPRA 55, Germany), TEM (JEM-2100F), and
HR-TEM. Energy-dispersive X-ray spectroscopy (EDX) was conducted with
an energy-dispersive X-ray detector in the ZEISS SUPRA 55 SEM system.
HAADF-STEM images were obtained by using an aberration-corrected cubed
FET Titan Cubed Themis G2 300 or JEM-ARM200F system (JEOL, Tokyo,
Japan). The metal content was determined by inductively coupled plasma
optical emission spectrometry (ICP-OES, Agilent ICPOES730). Raman
spectra were measured through the LabRAM HR800 spectrometer (473 nm
excitation laser source). XPS measurements were carried through a
Thermo Scientific ESCALab 250Xi instrument with monochromatic Al Kα
X-ray radiation. Nuclear magnetic resonance spectroscopy (1H NMR, AVANCE III HD 400) was used to determine the yield and purity
of the final products.
3
Advanced Microscopy for Material Analysis
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The SEM images were taken using a FE-SEM manufactured by FEI, and its accelerating voltage was 10 kV. The JEM-ARM200F system manufactured by JEOL was used for the TEM and EDS analysis with 200 kV accelerating. For real time SEM inspection, the FEI Quanta 3D FEG was utilized under 5 kV. Frames of the recorded video images were 42 frames per sec.
4
Characterization of Nanostructure Materials
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A Hitachi S-7400 system was used for the FE-SEM study; it was operated at 15 kV and at a 13° tilt-view. A JEOL JEM-ARM-200F system operated at 200 KV was used in the HR-TEM study. Samples of the NW structures were prepared by coating with Platinum using a dual-beam focused ion beam (FIB, Quanta 3D FEG) technique with a beam current of 65 nA and a resolution of 7 nm at 30 KV. Single-crystal X-ray diffraction (XRD) measurements were performed using a Rigaku diffractometer equipped with a Cu-Kα radiation source. PL spectroscopy was carried out using a 325 nm line of a He-Cd laser as an excitation source at room temerature. CL measurements were taken at the applied accelerating voltage (Va) and beam current (Ib) 10 KV and 1000 pA, respectively. For measuring photocurrent of the fabricated devices, we utilized a solar simulator (McScience Lab 100) as a light source. This light source generated white light with a maximum power density of 100 mW/cm2. A monochromator (Oriel Cornerstone 130) was used to provide the monochromatic light incident on the channel.
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