Lambda 35 uv vis nir

The morphology and structure of the samples were characterized using a scanning electron microscope (SEM) (FEI NOVA 450, FEI Company, Hillsboro, OR, USA) and transmission electron microscope (TEM) (FEI Talos F200X). The absorption spectrum was measured using an ultraviolet-visible (UV-Vis) spectrophotometer (Perkin-Elmer Lambda 35 UV-VIS-NIR, Waltham, MA, USA). The electrochemical workstation (Chenhua 760e, CH Instruments, Shanghai, China) was used for the photoelectric performance test. The EIS at a frequency range from 100 kHz to 1 Hz was measured. The Raman spectra were collected through the Renishaw with the 532 nm laser. During the catalytic measurements, the Raman spectra were collected at the same interval voltage to eliminate the extra influence induced through bias voltage (the measurement voltage was 0.05, 0.00, −0.05, −0.10, and −0.15 V) under the same light intensity (5 mW), and the exposure time was 5 s.

The crystal structures of films were characterized using X-ray diffraction spectra (XRD, X’pert PRO, Panalytical) with Cu Kα (λ = 0.15406 nm) radiation at room temperature. Grazing incidence XRD measurements with incidence angle of 1 degree was used. The film morphologies were identified using a field emission scanning electron microscope (FESEM). High-resolution transmission electron microscopy (HRTEM) was performed in combination with EDS using a FEI Tecnai F30 microscope equipped with a field emission gun (FEG) operated at 300 kV, a high angle annular dark field (HAADF) STEM detector and an Oxford Instruments EDS detector. The absorbance was measured using the ultraviolet-visible (UV-vis) spectrophotometer (Perkin-Elmer Lambda 35 UV-vis-NIR). The Raman spectra were obtained using a Renishaw in Via Raman microscope with a 532 nm laser.