For the hydrothermal method: zinc nitrate hexahydrate (>99%, Alfa Aesar, Karlsruhe, Germany), gallium oxide (99.999%, Alfa Aesar, Karlsruhe, Germany), nitric acid (35 wt%), tin chloride pentahydrate (98%, Alfa Aesar, Karlsruhe, Germany), chromium (III) nitrate nonahydrate (99.9%, Alfa Aesar, Karlsruhe, Germany), ammonia solution (30 wt%), hydrochloric acid (50 mmol L−1). All the chemicals were used as received without further purification.
Gallium oxide
Gallium oxide is a semiconductor material that exhibits unique electronic and optical properties. It is a wide-bandgap oxide material with potential applications in high-power, high-frequency, and high-temperature electronic devices.
Lab products found in correlation
2 protocols using gallium oxide
Synthesis of Metal Oxide Nanostructures
For the hydrothermal method: zinc nitrate hexahydrate (>99%, Alfa Aesar, Karlsruhe, Germany), gallium oxide (99.999%, Alfa Aesar, Karlsruhe, Germany), nitric acid (35 wt%), tin chloride pentahydrate (98%, Alfa Aesar, Karlsruhe, Germany), chromium (III) nitrate nonahydrate (99.9%, Alfa Aesar, Karlsruhe, Germany), ammonia solution (30 wt%), hydrochloric acid (50 mmol L−1). All the chemicals were used as received without further purification.
Synthesis of Functionalized Polymeric Materials
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