Jsm 5410lv
The JSM-5410LV is a low-vacuum scanning electron microscope (SEM) designed for materials analysis. It provides high-resolution imaging and elemental analysis capabilities for a wide range of samples, including those that are non-conductive or require minimal sample preparation.
Lab products found in correlation
88 protocols using jsm 5410lv
Characterizing AgNP Size and Shape
SEM Analysis of Extracted PHBV
Correlative SEM and Confocal Microscopy of Chick and Mouse Embryonic Hindbrains
Biomass Surface Morphology Analysis
Cell Imaging: SEM and CLSM Protocols
Scanning Electron Microscopy of Fractured Surfaces
One specimen was selected from the 5Si and 5Nosi groups, carbon-sputter coated, and observed using the EDX detection system built into the SEM instrument (JSM-5410LV; JEOL Ltd., Tokyo, Japan). Zn-mapping images of the surfaces were captured at an acceleration voltage of 20 kV and a magnification of 2,000×.
Eggshell and Tibia Bone Analysis
Scanning Electron Microscopy of Microcapsules
Crystallinity Analysis of TiO2 Films
Here, A and R are the mass percentages of the anatase and rutile phases, respectively; IA and IR are the intensities of the (101) anatase and (110) rutile peaks.
Scanning electron microscope (SEM, JSM5410LV, JEOL®, Tokyo, Japan) equipped with energy dispersive X-ray spectrometer (EDS, Link ISIS-300, Oxford®, Abingdon, UK) was employed to analyze the surface morphologies of the HGBs before and after the formation of the TiO2 coating, and to determine the thickness of the TiO2 layer. Palladium sputtering was used in advance to impart conductivity to the samples, and further analysis was carried out by operating at an accelerating voltage of 20 kV under high vacuum mode while maintaining a working distance of 20 mm.
Crystallinity Analysis of TiO2 Films
Here, A and R are the mass percentages of the anatase and rutile phases, respectively; IA and IR are the intensities of the (101) anatase and (110) rutile peaks.
Scanning electron microscope (SEM, JSM5410LV, JEOL®, Tokyo, Japan) equipped with energy dispersive X-ray spectrometer (EDS, Link ISIS-300, Oxford®, Abingdon, UK) was employed to analyze the surface morphologies of the HGBs before and after the formation of the TiO2 coating, and to determine the thickness of the TiO2 layer. Palladium sputtering was used in advance to impart conductivity to the samples, and further analysis was carried out by operating at an accelerating voltage of 20 kV under high vacuum mode while maintaining a working distance of 20 mm.
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