CR2032-type coin cells were assembled with the PC-FGF/S composite cathode, CNP and SCNP coated glass fiber separators, lithium metal anode and electrolyte in an argon-filled glove box. The cells were cycled between 1.4 and 3.2 V on a Neware BTS 3008 battery tester. Surface characterization of the modified separators was carried out using SEM equipped with an EDS. Cyclic voltammetry (CV) measurements and electrochemical impedance spectroscopy (EIS) tests were performed using a CHI660E electrochemical workstation at a scan rate of 0.1 mV s−1 in the potential range of 3.2–1.4 V (vs. Li+/Li) and 1 MHz to 1 Hz at an AC voltage amplitude of 10 mV. XRD diffraction analysis was carried out with a Rigaku SmartLab diffractometer by using filter Cu Kα radiation (k = 1.541 Å). Raman analysis was carried out with a Renishaw Raman Spectroscopy system using a 532 nm argon laser as the excitation source. Elemental compositions were analyzed using X-ray photoelectron spectroscopy (hemispherical analyzer, Thermo Scientific K-Alpha XPS).
Raman spectroscopy system
Manufactured by Renishaw
Sourced in United Kingdom
The Raman spectroscopy system is a laboratory equipment designed to perform Raman spectroscopy, a non-destructive analytical technique used to study the molecular structure and composition of materials. The system utilizes monochromatic light, typically from a laser source, to interact with the sample and generate a Raman spectrum, which provides information about the vibrational, rotational, and other low-frequency modes of molecules within the sample.
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Lab products found in correlation
3 protocols using raman spectroscopy system
1
Coin Cell Assembly with Modified Separators
2
High-Pressure Raman Spectroscopy of Bi2Se3
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The Raman spectroscopy investigation on Bi2Se3 under high pressure was carried out using a commercial Renishaw Raman spectroscopy system in the backscattering configuration excited with a He/Ne laser (λ = 632.8 nm). The spectra resolution is as small as 1 cm−1, and the lowest available frequency is 50 cm−1. Two independent high-pressure Raman experiments were implemented on Bi2Se3. The methanol-ethanol mixture was used as PTM in Run 1, and no PTM was used in Run 2.
3
Characterization of Reduced Graphene Oxide
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For the investigation of the morphology of the samples, scanning electron microscopy (SEM) was used (Auriga CrossBeam Workstation, Carl Zeiss, Oberkochen, Germany). To examine the chemical structure of GO and rGO, X-ray photoelectron spectroscopy (XPS) was used (UHV Multichamber XPS, Prevac, Rogów, Poland). Analyses of the reduction efficiency and structural changes of the GO and rGO samples were performed using a Raman spectroscopy system (Renishaw Invia, Wotton-under-Edge, UK) at room temperature; the laser was excited at a wavelength of 532 nm and used at a power lower than 1 mW. The electronic properties of GO and rGO were measured using the Hallotron ECOPIA HMS 5500 system.
For SEM and Raman spectroscopy analysis, the graphene materials were deposited onto a Si substrate. For XPS measurements, powdered (freeze-dried) samples were used. For the electrical measurements, freeze-dried samples were pressed into a tablet form.
For SEM and Raman spectroscopy analysis, the graphene materials were deposited onto a Si substrate. For XPS measurements, powdered (freeze-dried) samples were used. For the electrical measurements, freeze-dried samples were pressed into a tablet form.
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