shown in
borosilicate glass (175 μm thickness, Si-Mat Germany) were piranha
cleaned (3:1 concd H2SO4/H2O2, 150 °C) for 15 min. PSQ was freshly prepared before
bonding by mixing Hardsil (AP grade, Gelest Inc.) with O-xylene (Fisher
Scientific) in a 1:2 ratio. Then, PSQ was spin-coated (3000 rpm, 30
s) on piranha-cleaned borosilicate glass and cured at 220 °C
for 30 min. The SiO2 wafer was first treated with O2 plasma using RIE (Plasmatherm BatchTop, sccm O2, 500 mT pressure, 100 W power, 1 min), and then the PSQ-coated side
of the borosilicate glass wafer was O2 plasma treated (10
sccm O2, 250 mT pressure, 50 W power, 2 min), and both
wafers were brought together to enable bonding. The bonded wafer was
then diced into individual chips.
After the particles had been
trapped, the chip was reopened using a tweezer to bend-off the lid
starting at a chip edge (
chip was then coated with 3 nm carbon using a thermal evaporator before
SEM imaging. The SEM images were recorded at 15 kV acceleration voltage
and a working distance of 2 mm with an in-lens detector.