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Inlens se

Manufactured by Zeiss
Sourced in Germany

The InLens SE is a scanning electron microscope (SEM) from Carl Zeiss. It is designed for high-resolution imaging of samples. The InLens SE utilizes an Electron Optical Column to generate and focus the electron beam, which is then scanned across the sample surface to produce an image.

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4 protocols using inlens se

1

Single Particle Optical Characterization and Correlative SEM

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The methods used in the single particle measurements were previously described.27 (link) Nanoparticles were dropcast onto clean coverslips and single particle optical characterization was performed using a home-built stage scanning confocal microscope with a Nikon 60× oil objective (NA 1.49) and a 976 nm fiber coupled laser at 500 kW/cm2. Custom Matlab code was used to identify an individual point spread function for each particle and perform a 2D Gaussian fit to determine the upconversion emission rate.
For correlative SEM, nanoparticles were dropcast onto a glass coverslip with a labeled grid pattern. The sample was first imaged by the confocal microscope, followed by sputter-coating a 2 nm gold–palladium layer to prep for SEM. Nanoparticles were imaged using a Zeiss Sigma Field Emission Scanning Electron Microscope (Carl Zeiss Microscopy, Germany) and InLens SE (Secondary Electron) detection, utilizing the grid pattern as a guide.
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2

Scanning Electron Microscopy of Material Grains

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The samples were loaded into a Zeiss EVO Scanning Electron Microscope (Carl Zeiss Microscopy, Munchen, Germany) at the Electron Microbeam Unit of Stellenbosch University’s Central Analytical Facility (CAF). Zeiss InLens SE (Secondary Electron) and SE2 detectors, as well as Backscatter Electron (BSE) Detector and Zeiss Smart SEM software were used to generate images. For Secondary Electron detection, operating conditions of 3 kV accelerating voltage and 100 pA beam current with a working distance of 3.8–4 mm were used to generate images. For Backscatter Electron detection (BSE), operating conditions of 20 kV accelerating voltage and 11 nA beam current with a working distance of 9.5 mm, were applied. Images were captured in random areas and at a range of magnifications, to characterize grain morphology.
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3

Cryogenic SEM Imaging of Hydrogels

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Hydrogel samples were placed on the sample holder with cyro matrix and frozen in liquid nitrogen. The samples were then transferred to the pre-chamber and the surface was fractured. After the sample surface was coated using Pt sputter, the sample was moved to the microscope’s cyro stage. The sample was imaged using Sigma-VP-FESEM at different magnifications with InLens SE or LnLens Duo Detector (Zeiss, Thornwood, NY) at 10 kV voltage and a working distance of 8.5 mm.
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4

Preparation of Ultrathin Sections on Silicon Wafers

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Serial ultrathin sections on tape were cut into strips and mounted in order on 4-inch silicon wafers (number of dust particles < 100, resistance 1–30 Ω, Canosis Co. Ltd., Tokyo, Japan) with double-sided adhesive conductive tape (carbon conductive double-faced adhesive tape with a nonwoven fabric core, Nisshin EM Co., Ltd., Tokyo, Japan). To ground the conductive layer on the tape surface to the wafer, we put copper foil tape (Takeuchi Kinzokuhakufun Kogyo, C1020R-H-40um, Supplementary Figure 2) on the edge of the tape and wafer. The sections were observed using In-lens SE or BSD with SEM (Sigma, Carl-Zeiss Microscopy GmbH, Oberkochen, Germany). We also used a SEM equipped stage bias potential (Gemini300/500, Carl-Zeiss Microscopy GmbH, Oberkochen, Germany) using the In-lens SE or the BSD optimized for low acceleration voltage (OnPoint BSD, Gatan, Inc., Pleasanton, CA, USA). We also used Atlas 5 (Fibics incorporated, Ottawa, Canada) for large area imaging.
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