For the TEM observations, we irradiated UV light to the QD solution diluted in toluene (5.87 × 10−5 mg mL−1) for 72 h in the ambient condition. The high-resolution TEM images of the QDs were obtained using a JEM-ARM200F (JEOL) microscope equipped with a spherical aberration corrector in the objective lens (image corrector), a cold field emission gun and a K3 IS Base detector (Gatan, U.S.A.). To avoid electron-beam induced sample damages, the dose rate of 500 e− Å−2 s−2 was used for the imaging. The HAADF-STEM images, EDS maps, and EELS maps of QD were obtained using a JEM-ARM200F (JEOL) microscope equipped with a spherical aberration corrector in the condenser lens (probe corrector) and a cold field emission gun. The microscopes were operated at 200 kV and installed at the National Center for Inter-university Research Facilities (NCIRF) at Seoul National University.
Jem arm200f
Manufactured by JEOL
Sourced in Japan, United States, Germany, United Kingdom
The JEM-ARM200F is an advanced electron microscope designed for high-resolution imaging and analysis. It features aberration-corrected optics and a high-brightness electron source, enabling atomic-scale resolution and enhanced image quality. The core function of this instrument is to provide researchers and scientists with a powerful tool for investigating the structural and chemical properties of materials at the nanoscale level.
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Lab products found in correlation
Jem 2100f, by JEOL (15 mentions)
D8 advance, by Bruker (12 mentions)
K alpha, by Thermo Fisher Scientific (8 mentions)
Jsm 7800f, by JEOL (7 mentions)
Uv 3600, by Shimadzu (7 mentions)
S 4800, by Hitachi (7 mentions)
Escalab 250xi, by Thermo Fisher Scientific (6 mentions)
Jsm 7600f, by JEOL (6 mentions)
Ultima 4, by Rigaku (6 mentions)
Smartlab, by Rigaku (6 mentions)
D max 2500, by Rigaku (5 mentions)
Optima 8300, by PerkinElmer (5 mentions)
Jsm 7100f, by JEOL (5 mentions)
Jem 2100, by JEOL (5 mentions)
Solidspec 3700, by Shimadzu (4 mentions)
Asap 2020, by Micromeritics (4 mentions)
Jed 2300, by JEOL (4 mentions)
Smartlab diffractometer, by Rigaku (4 mentions)
Su8010, by Hitachi (4 mentions)
Jem 2010, by JEOL (4 mentions)
291 protocols using jem arm200f
1
High-resolution TEM Characterization of Quantum Dots
2
Catalyst Characterization via Advanced Microscopy
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The morphology of the catalyst was observed with field emission scanning electron microscopy (FESEM, JSM-7800F, Jeol, Japan), transmission electron microscopy (TEM, HT7800, Hitachi, Japan) and spherical-aberration-corrected transmission electron microscopy (STEM, JEM-ARM200F, Jeol, Japan) with a JEM-ARM200F (URP) ED for energy-dispersive X-ray spectroscopy (EDS) analyses. The BET specific surface area was characterized with a TriStarII3020 (Micromeritics Instr. Corp., USA). The chemical status and crystalline structure of the catalysts were analyzed by X-ray photoelectron spectroscopy (XPS, ESCALAB 250Xi, Thermo, UK) and X-ray diffractometry (XRD, D8 ADVANCE, Germany), respectively. The cobalt content of the catalyst was calculated from the XPS spectrum and also measured with inductively coupled plasma mass spectrometry (ICP-MS, iCAP QC, USA). The chemical oxygen demand (COD) of the sample was quantified with a COD meter (Model 6B-200, Shengaohua Environ. Protect. Technol. Co., Ltd, China). Electron spin resonance (ESR) spin trapping investigation was conducted with an A300 spectrometer (Bruker, USA), with a center field at 3510 G and a sweep width of 100 G at room temperature. DMPO (100 mM) was used as the trapping agent for ˙OH (water as solvent) and O2˙− (methanol as solvent), and TEMP (50 mM) as the 1O2 trapping agent.30
3
Comprehensive Structural Characterization of Materials
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The crystal structure was investigated by X-ray diffraction (Rigaku) analysis in the 2θ range of 10°–80° with a scan step of 0.02° and an acquisition time of 2 s for each step. The specimens were sealed in a homemade holder inside an Ar-filled glove box to prevent hydration from moisture in air. Morphology and elemental analyses were carried out by TEM (JEM-ARM200F, JEOL) characterization at an acceleration beam voltage of 300 kV and its attached EDX (Quantax 400, Bruker), respectively. HAADF-STEM characterization was performed using a JEM-ARM200F (JEOL) equipped with a cold field-emission gun and double spherical aberration correctors, operated at an acceleration voltage of 200 kV. The probe beam had a convergent semi-angle of 23 mrad. The inner-outer semi-angle of the HAADF detector was 90–370 mrad. The electron probe current was 11 pA. The dwell time per pixel was 38 μs. The size of each pixel was 16.5 × 16.5 pm2. The oxidation states of TMs were examined using X-ray photoelectron spectroscopy (Thermo Scientific Sigma Probe). The impedance was measured using a frequency response analyser (VSP multi potentiostat, BioLogic) over the frequency range of 0.01 Hz–1 MHz with an amplitude of 10 mV.
4
Comprehensive Material Characterization
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High-resolution TEM images were obtained on an electron microscope at acceleration voltages of 120 kV (Tecnai G2 F20 S-TWIN, FEI, Thermo Fisher Scientific, USA) and 200 kV (JEM-ARM200F, JEOL, Japan). To map the constituent elements in a sample, STEM-EDS characterization was performed on an EX-24221M1G5T equipped in a JEM-ARM200F (JEOL, Japan) at an acceleration voltage of 200 kV. X-ray photoelectron spectroscopy was carried out on an AXIS Nova (Kratos Analytical, SHIMADZU Corp., Japan). Optical absorption spectra of the obtained samples were collected on a UV-vis-NIR spectrophotometer (UV-3600, Shimadzu Corp., Japan). Raman spectra of the obtained samples on a grid for TEM observation were collected via a homemade Raman setup with a QE65 Pro spectrometer (Ocean Optics) and a He–Ne laser with a wavelength of 633 nm. Scanning electron microscopy (SEM) and EDS were performed on an electron microscope at an acceleration voltage of 20 kV (S-3500N, Hitachi, Japan, and EMAX300, Horiba, Japan).
5
Comprehensive Materials Characterization
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The samples were observed through HAADF‐STEM (JEM‐ARM200F, JEOL Ltd., Japan) to obtain atomic‐resolution images of the material. The morphology and composition of the adsorbent were analyzed by SEM (GeminiSEM 300, Carl Zeiss AG, Germany) EDS (JEM‐ARM200F, JEOL Ltd., Japan). The valence states of the atoms in the sample were analyzed through XPS (Axis Supra, Kratos Analytical Ltd., UK) using a monochromatic Al X‐ray source (1486.6 eV) on a 5000C system. Paramagnetic substances with uncoupled electrons were detected through ESR (A300‐10/12, Bruker, Germany). Uranium was quantitatively analyzed through the UV–vis spectrophotometry (UV–vis, LAMBDA 750, PerkinElmer, USA) and ICP‐MS (Thermo Scientific iCAP RQ, ThermoFisher Scientific, USA).
6
Fabrication and Characterization of W/HfO2/TiN Memristors
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The array of cross-bar-type W/HfO2/TiN memristors was fabricated. A 50 nm-thick TiN layer was sputtered (Endura, Applied Materials) on an SiO2/Si substrate, and the TiN layer was patterned into a line shape to form a BE. The 2–10 µm wide TiN BEs were patterned using conventional photolithography and the dry-etching system. After the patterning, the residual photoresist was removed with acetone and cleaned sequentially with deionized water. Then 4 nm HfO2 was deposited using atomic layer deposition (ALD) at a 280 °C substrate temperature using a traveling-wave-type ALD reactor (CN-1 Co. Plus 200). A tetrakis-ethlylmethylamido hafnium (TEMA-Hf) and O3 were used as precursors for Hf and oxygen, respectively. On the HfO2 layer, 50-nm-thick W TEs were sputtered using the MHS-1500 sputtering system and patterned into 2–10 µm wide lines using the conventional lift-off process. After the fabrication, the WHT device was analyzed using x-ray photoelectron spectroscopy (XPS, AXIS SUPRA, Kratos) and energy-dispersive x-ray spectroscopy (EDS, JEOL, JEM-ARM200F) to observe the formation of the tungsten oxide layer. Cross-sectional transmission electron microscope (TEM) images of the WHT memristor were observed using scaning transmission electron microscopy (STEM, JEOL, JEM-ARM200F).
7
High-Resolution Microscopy Techniques
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Scanning transmission electron microscopy (STEM) was performed in a probe-corrected JEOL-JEM-ARM 200 F (JEOL Ltd., Akishima-shi, Japan) operated at 200 kV (point resolution of 0.08 nm). Scanning electron microscopy (SEM) was performed using a FEG Hitachi S-5500 ultra high-resolution scanning electron microscope (0.4 nm at 30 kV; Hitachi Ltd., Chiyoda-ku, Japan) with a BF/DF Duo-STEM detector.
8
Characterization of AgPt Nanoparticles
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The post-synthesized AgPt NPs were investigated using a UV-Vis spectrophotometer Metash UV6000 (Shanghai Metash Instruments Co., Shanghai, China) in the 200–800 nm range. The structural characterization was performed with a Rigaku Ultima IV diffractometer (Rigaku Co., Tokyo, Japan) using the powder XRD technique in a 2θ range from 30° to 90° at room temperature. The Hitachi SU8230 cold-field emission scanning electron microscope CFE-SEM (Hitachi High-Tech Co., Tokyo, Japan) and Jeol JEM-ARM200F scanning transmission electron microscope TEM/STEM (JEOL Ltd., Tokyo, Japan) were used to analyze the structural, morphological, and chemical properties.
9
Multimodal Characterization of Materials
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The scanning electron microscopy (SEM) images were obtained by JEOL JSM-7800F with an energy dispersive spectrometer (EDS). The transmission electron microscopy (TEM) images and selected area electron diffraction (SAED) patterns were recorded by JEOL JEM-F200. The aberration-corrected high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images were collected by JEOL JEM-ARM200F. The X-ray photoelectron spectroscopy (XPS) analysis was performed on Kratos Axis Ultra DLD spectrometer. Raman spectra were recorded with Horiba LabRam HR Evolution spectrometer. Nitrogen adsorption-desorption isotherm measurement was conducted using Micromeritics ASAP 2460 system. The thermogravimetric analysis (TGA) was investigated by using NETZSCH STA 449 C instrument. The ultraviolet-visible (UV-vis) spectra were performed by Shimadzu UV-2700 spectrophotometer. The in-situ X-ray diffraction (XRD) patterns were performed using Bruker D8 Advance with Cu Kα radiation (λ = 0.15406 nm) at 40 kV and 40 mA. The X-ray absorption structure (XAS) spectra (W L-edge) were measured in Shanghai Synchrotron Radiation Facility (SSRF).
10
Characterization of IHN BCP PC Films
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The cross-sectional images of in-plane lamellar structures of IHN BCP PC films were imaged by bright-field TEM and EDX with spherical aberration (Cs)–corrected spherical aberration-corrected scanning TEM (JEM-ARM 200F, JEOL). Thin cross sections of dried films were prepared by an FIB (JIB-4601F, JEOL). GISAXS measurements were performed on IHN BCP PC films, which have stopbands in red, green, and blue, and the EMIMTFSI printed sample using the PLS-II 9A U-SAXS beamline at the Pohang Accelerator Laboratory. UV-vis spectra were measured using a UV-vis spectrometer (Cary 5000, Agilent). Optical microscope images were used to observe the printed SC films (BX 51 M, Olympus). The mechanical properties of SC film samples were measured by using the ultra nanohardness indentation tester (CSM Instrument). FDTD simulation was performed using DEVICE Multiphysics Simulation Suite (Lumerical Inc.). The simulation was carried out under the condition that a plane wave having a wavelength of 200 to 2.5 nm was incident perpendicularly to the modeled EMIMTFSI swollen IHN BCP PC. Uniaxial anisotropic perfectly matched layer boundary condition was used during the simulation.
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