Afg3102

In order to induce piezoelectricity and pyroelectricity of microstructured P(VDF-TrFE) which responds to pressure and temperature, an on-chip poling process was performed by grounding source (S) and drain (D) electrodes while gate electrode is applied at −100 V.^[36] Applying the pressure to the microstructured OFET was conducted by using a cyclic pushing system with a load cell while the device is positioned on a heating block with a temperature controller and a thermocouple. A two-channel arbitrary/function generator (Tektronix AFG 3102) was explored to apply sinusoidal AC V_G with a frequency of 0.3125 Hz and amplitude of 20 V. We measured the device characteristics using an HP 4145B semiconductor parameter analyser with time interval of 0.01 s and −20 V of V_D. The amplitude and mean values of I_D induced by AC gate bias were extracted using a fast-Fourier-transform (FFT) method. These processes were also used in stimuli detection from a finger and a blunt stick by positioning the devices on the heating block.

40 × 40 μm² Co/PTO/LSMO tunnel junction devices have been electrically characterized by measuring current–voltage (I–V) characteristics using Keithley 2635 source-measuring units and an HTTP4 Lake-Shore cryogenic probing station. To switch the polarization orientation of the barrier, 0.5 ms wide positive/negative voltage pulses of 3 V were applied by using a Tektronix AFG 3102 function generator.
Typical I–V characteristics are shown in Supplementary Fig. 5 showing the TER effect. For the 3-u.c. PTO layer, no change in current is observed, showing that the polarization cannot be switched. TMR was evaluated from measuring the tunnelling current with a 200 mV applied bias. Supplementary Fig. 3 shows a change in resistance caused by the magnetization switching in the Co and LSMO electrodes. Macroscopic magnetic hystereses measured on similar, unpatterned samples show that the coercive fields of the patterned devices are very similar to the unpatterned electrodes.
The total magnetic moment of the heterostructure (with the total area 5 × 5 mm²) was measured using an Oxford Instruments MagLab vibrating sample magnetometer in the as grown state. All measurements were performed after cooling the samples to 10 K in a −0.8 T magnetic field. TMR was calculated as where R_↓↑ and R_↑↑ are the resistances of the devices with antiparallel and parallel magnetizations of the electrodes.

The optical images of the devices were taken by an optical microscope (ZEISS, Axio Imager A2m). The Raman spectra were collected by a micro-zone confocal Raman system (WITec alpha 300R) under 532 nm laser illumination. The thickness of the MoTe₂ film was measured by an atomic force microscope (Asylum Research, Cypher S). All the electrical measurement was conducted in the dark with a semiconductor characterization system (Keithley 4200-SCS) that was connected to a probe station. For the dynamic switching performance measurement, a function generator (Tektronix AFG 3102) and a digital oscilloscope (Tektronix DPO 2024) were employed to generate the V_in and record the V_out, respectively. Both the function generator and the digital oscilloscope had common ground with the semiconductor characterization system, which provided the V_dd. All the characterizations were performed in ambient condition.

A microscope (D-35578 Wetzlar, Leica, Germany) was coupled with a high speed charge-coupled-device (CCD) camera (OptiMOS, QImaging, Canada) to record the behavior of particles. MBs and polystyrene beads were injected into a microchannel by a micro-syringe pump (Pump 33; Harvard Apparatus, South Natick, MA). A dual-channel arbitrary signal generator (AFG3102, Tektronix, USA) was used to generate sinusoidal signals. The RF signals were then amplified by power amplifier (Minicircuits ZHL-1–2W, Brooklyn, NY, USA) and eventually connected to SFITs. The input power applied to the single SFITs ranged from 20 mW to 220 mW, measured by a power sensor (Minicircuits PWR-4GHS, Brooklyn, NY, USA) with a cold 30 dB attenuator.

An ultrasound neuro-modulation chip with 28 MHz resonant frequency compatible with the patch-clamp systems due to the small size and transparent character was used for stimulation of slices in vitro (Figure S5)39 -41 (link). The chip consisted of interdigital transducers (IDTs) and a recording chamber (a polydimethylsiloxane ring-shaped chamber). The finger-electrodes of IDTs were deposited using micro-electromechanical systems (MEMS) techniques on a piezoelectric 128^o Y-rotated, X-propagating lithium niobate (LN, LiNbO₃) sub-strate (1 mm thick, transparent) with an aluminium layer of 200 nm 42 . Pulsed ultrasound waveforms were generated by an arbitrary waveform generator (AFG 3102, Tektronix, Beaverton, Oregon) and amplified by a power amplifier (ZHL-1-2W+, Mini-Circuits, Brooklyn, NY, USA). The displacement of the piezoelectric substrate perpendicular to the surface plane was 20 pm measured by a Laser Doppler Velocimetry (UHF-120 Ultra High-Frequency Vibrometer, Polytec, Germany) and the acoustic pressure equal to 0.13 MPa (the spatial-peak pulse-average intensity (I_SPPA) was evaluated to be approximately 465 mW/cm². The spatial peak time average intensity (I_SPTA) was equal to 233 mW/cm² and was calculated by multiplying duty cycle to the I_SPPA43 .

Polypyrrole (PPy) nanomaterials were synthesized from a pyrrole monomer solution using the proposed electrode-embedded APPJ device. The amount of liquid pyrrole per treatment was 25 mL, and an Ar flow rate of 500 standard cubic centimeters per minute was used. A bipolar pulse with an amplitude of 7 kV and frequency of 5 kHz was applied to the APPJ device using a high-voltage power amplifier (20/20C-HS, Trek, Inc., Lockport, NY, USA) and function generator (AFG-3102, Tektronix Inc., Beaverton, OR, USA). The pulse duration of positive and negative polarity in bipolar pulse was equal to 100 μs and the polymerization duration time was up to 6 h.