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Physical properties measurement system (ppms)

Manufactured by Quantum Design
Sourced in United States

The Physical Properties Measurement System (PPMS) is a versatile laboratory instrument designed for the study of a wide range of physical properties of materials. It provides a highly integrated and automated platform for conducting precise measurements over a wide range of temperatures, magnetic fields, and other environmental conditions.

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50 protocols using physical properties measurement system (ppms)

1

Superconducting Material Characterization

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Heat capacity measurements were performed for mosaics of single crystals using the He3 option in a Quantum Design Physical Properties Measurement System for temperatures 400 mK<T<20 K. Magnetization M(T, H) measurements were carried out for mosaics of single crystals for temperatures T=1.8–350 K under an applied magnetic field of H=5 kOe applied parallel to the c-axis using a Quantum Design Magnetic Property Measurement System. Magnetic susceptibility χ is defined as the ratio M/H. Zero magnetic field electrical resistance R was measured using the He3 option in Quantum Design Physical Properties Measurement System for temperatures 400 mK<T<300 K. Several individual crystals were measured for each concentration, which revealed a high degree of batch uniformity. The angular dependence of the superconducting upper critical field was measured using the superconducting magnet (SCM-1) dilution refrigerator system at the National High Magnetic Field Laboratory for H<18 T and T=20 mK. Additional magnetoresistance measurements were performed at the National High Magnetic Field Laboratory, Tallahassee, up to magnetic fields of 35 T and at T=50 mK.
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2

Epitaxial Neodymium Nickelate Thin Films

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15 unit cell (~6 nm) NdNiO3 films were grown by RF magnetron sputtering on NdGaO3 and YAlO3 substrates, in an Ar/O2 gas mixture, with a 9 mTorr growth pressure, as described in detail elsewhere15 . Neither film is relaxed. The in-plane longitudinal resistivity was measured as a function of temperature in a Quantum Design Physical Properties Measurement System (PPMS). TEM cross-sections along [001]O and [1 0]O (the subscript indicates the orthorhombic orientation) were prepared using a focused ion beam with final milling energies of 5 kV Ga ions. High-angle, annular dark-field (HAADF)-STEM imaging and (LA-)PACBED experiments were conducted on a 300 kV FEI Titan S/TEM (Cs = 1.2 mm). A convergence semi-angle of 9.6 mrad was used for high resolution STEM imaging, while 9.6 and a reduced angle of 3.4 mrad was used for PACBED. LA-PACBED patterns are obtained from roughly a 12 × 12 unit cell area. An FEI double-tilt holder was used for room temperature PACBED and high resolution imaging, while a Gatan 636 double-tilt LN2 holder was used for low temperature experiments. All cold-stage experiments were carried out a temperature of 105 K, which remained stable throughout the data acquisition. PACBED simulations were carried out using the Kirkland multislice code44 at 0 K.
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3

Characterization of Cu3As Single Crystals

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Electrical resistivity and Seebeck effect were measured on properly shaped Cu3As single crystals using the commercial apparatus Physical Properties Measurement System (PPMS, Quantum Design) with homemade sample holders. The electrical resistivity was measured in a standard four-probe configuration, experimentally realized with copper leads glued to the sample through silver paint, in a temperature range between 2 and 310 K and magnetic field up to 9 Tesla. In the Seebeck effect setup, one side of the sample was anchored to a thermal mass, while a resistive heater (R = 2.8 kΩ) was glued to the other side in order to generate a temperature gradient. A calibrated Chromel-Au-Chromel thermocouple was used to measure the temperature gradient across the sample, while two copper electrodes were attached to the sample to pick up the Seebeck voltage. The Seebeck data have been collected between 290 and 15 K.
Magnetic susceptibility was measured both on a single crystal and on a polycrystalline sample of Cu3As using the commercial apparatus SQUID (MPMS, Quantum Design). The temperature-dependent magnetization measurements were acquired in external magnetic fields of 1 T, from 5 to 300 K.
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4

Measuring Heat Capacity in PPMS

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Heat capacity was measured in a Quantum Design Physical Properties Measurement System (PPMS) using both a relaxation method and a heat sweep method at the sharp first-order jump at the SST for a collection of hundreds of single crystals, where each crystal has a [110] face in contact with the sapphire measurement plate via apeizon N grease.
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5

Mott Variable Range Hopping Characterization

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In a four probe arrangement, samples were silver painted onto an insulating support at the contact points with approximately 1 mm between inner leads. Anchoring the sample to the support with adhesive increased setup robustness, but was found to modify the transport behavior and was not used. The samples were placed into a Quantum Design Physical Properties Measurement System (PPMS). Resistance versus temperature data was fitted to Mott's variable range hopping with with TM being the characteristic Mott temperature and d being the discrete dimensionality of the electron hopping.
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6

Electric Transport Measurements on Strained MoTe2

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Single-crystal MoTe2 was attached on the surface of a piezoelectric stack using ultrahigh-strength two-component epoxy glue (UHU). The epoxy glue was subsequently cured at 80°C by 1 hour. The sample and piezo stack were well electrically isolated because the epoxy glue is a very good insulator. Gold wires were then attached on the surface of MoTe2 single crystal using silver epoxy. Silver epoxy was cured at 80°C for 3 hours before the measurements. Electric transport measurements were performed in a Quantum Design Physical Properties Measurement System (PPMS) in a temperature range of 2 to 300 K. Strain was measured using a strain gauge, which was glued on the other side of the piezoelectric stack.
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7

Fabrication and Characterization of LCMO Thin Films

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The LCMO films were deposited for 30 minutes under an oxygen pressure of 0.35 mbar at 650 °C. The laser energy and repetition frequency were fixed to 200 mJ and 5 Hz, respectively. After deposition, the films were in situ thermally treated for 20 minutes under the same temperature and oxygen pressure. In the process of both the deposition and thermal treatment of the LCMO thin films, high magnetic fields were applied perpendicularly to the film plane. The derived LCMO thin films were characterized by x-ray diffraction (XRD), field emission scanning electron microscopy and transmission electron microscopy. Magnetization measurements were performed by a Superconducting Quantum Interference Device Magnetometer (SQUID) made by Quantum Design and electrical transport measurements by a Physical Properties Measurement System (PPMS) by Quantum Design.
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8

Wide-Range Transport Characterization of Quantum Materials

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All measurements including the four-terminal AC differential conductance measurements and the DC current-voltage (IV) measurements were performed over a wide range of temperature (2.5 K to 120 K) using a Quantum Design Physical Properties Measurement System (PPMS). Samples were mounted on a commercial PPMS puck and all measurements were performed in a low-noise screen room. For AC measurements, we used 23.3 Hz as the AC output frequency. The DC source voltage was supplied by a Keithley 2400 source meter and the AC source was supplied by a Agilent 33120 A AC generator with ΔV ~ 0.2 mV. The DC and AC source signals were added using a homemade DC + AC adder and then applied to the junction. The DC bias across the junctions was measured with HP 3456A multimeter, the AC voltage signal with a SR830 DSP lock-in amplifier, and the AC current signal with a second SR830 lock-in amplifier after converting the current to a voltage using a SR570 current preamplifier.
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9

Growth and Characterization of Ti1-xVxO2 Thin Films

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The Ti1−xVxO2 films (x = 0.03 and 0.05) with the thickness of 30–245 nm were grown on SrTiO3 (100) substrate by the PLD technique at a temperature of 800 °C and an oxygen partial pressure of 3 × 10−3 mTorr. The laser pulses were supplied by a KrF excimer source (λ = 248 nm) with an energy density of 2.5 J per cm2 per shot and a frequency of 10 Hz. The nominal Ti1−xVxO2 targets were prepared by a solid-state reaction method using TiO2 (99.99%) and V6O13 (99.97%) powders, and they were ablated for 5 minutes to eliminate surface contamination before deposition. After deposition, the films were annealed in situ for 30 minutes, and then cooled down to room temperature slowly at the same oxygen pressure. The crystal structures of the films were analyzed by θ–2θ X-ray diffraction (XRD) with using Cu Kα radiation (λ = 0.15406 nm). The chemical composition was determined by X-ray photoelectron spectroscopy (XPS) with a monochromatic Al Kα radiation as the X-ray source. The magnetic properties were measured by a superconducting quantum interference device (SQUID) magnetometer. The transport properties of the films were determined in the four-point probe configuration using a Quantum Design physical properties measurement system (PPMS) as a function of temperature.
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10

Characterizing Dy Magnetic Susceptibility

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Magnetic susceptibility measurements, χ(T)=M(T)/H, were made using a Quantum Design* Magnetic Properties Measurement System (MPMS) with a superconducting interference device (SQUID) magnetometer. Measurements were made after cooling in zero field (ZFC) and in the measuring field (FC) of μ0H=0.1 T over the temperature range 2≤T≤300 K. Isothermal magnetization M(H) measurements were made using a Quantum Design* Physical Properties Measurement System (PPMS) at selected temperatures 1.6≤T≤80 K between −14≤μ0H≤14 T. A global fit to the M(H) data for T≥5 K (Fig. 1e) was performed using the powder-averaged form for free Ising spins,

where H is applied magnetic field, and magnetic moment μ is the only fitting parameter21 . The fitted value μ=10.17(8) μB per Dy is in close agreement with the expected value of 10.0 μB for a Kramers doublet ground state with g=4/3 and mJ=±15/2; in particular, the reduced value of the saturated magnetization, Msatμ/2, is as expected for powder-averaged Ising spins21 .
*The name of a commercial product or trade name does not imply endorsement or recommendation by NIST.
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