After 4 weeks of culture, constructs were fixed in 2% (w/v) PFA and dehydrated in successive ethanol washes. Once dehydrated, samples were dried using a CO2 critical point dryer (Emitech K850). Dried samples were subsequently coated with a thin layer of graphite (approximately 40–50 nm) (Emitech K950X). Finally, samples were examined under a JEDL J-7100 field emission scanning electron microscope (Cathodeluminiscence spectrometer GATAN MONO-CL4, EDS detector, retroscattered electron detector) at an accelerating voltage of 15 and 20 kV.
Mono cl4
Manufactured by Ametek
Sourced in United States
The MONO-CL4 is a laboratory instrument designed for the analysis and characterization of materials. It provides monochromatic illumination for use in various analytical techniques.
Automatically generated - may contain errors
Lab products found in correlation
S 4800, by Hitachi (2 mentions)
Jem arm200f, by JEOL (1 mentions)
Axis ultra dld, by Shimadzu (1 mentions)
F 4600, by Hitachi (1 mentions)
D8 x ray diffractometer, by Bruker (1 mentions)
Fl 311, by Horiba (1 mentions)
Paraformaldehyde (pfa), by Merck Group (1 mentions)
Ethanol, by Merck Group (1 mentions)
Polaron sc 7620 sputter coater, by Quorum Technologies (1 mentions)
8 protocols using mono cl4
1
Scanning Electron Microscopy of Tissue Constructs
2
Spatial Characterization of DCTP LED
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Spatial optical characterization on DCTP LED was performed at room temperature by cathodoluminescence (CL) (monoCL4, Gatan, Inc., Pleasanton, CA, USA) equipment connected to an SEM, where the acceleration voltage was 10 kV. A transmission electron microscopy specimen was prepared using the focused ion beam technique. The DCTP structure was also observed by spherical aberration-corrected, high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) (JEM-ARM200F, JEOL, Ltd., Tokyo, Japan). To estimate the indium composition, the image contrast in the HAADF-STEM image scales and the atomic number, Z, were used22 . Secondary ion mass spectrometry, which is frequently used to analyze the chemical composition in conventional 2D film, is not able to extract the indium molar fraction of the InGaN layers in 3D structure LEDs. The values from energy-dispersive X-ray spectrometry are underestimated because the information of the InGaN layer is detected together with that of the surrounding GaN barrier. It is therefore likely that an analytical method for checking the indium composition deduced from the HAADF-STEM intensity has higher spatial resolution than the other measurement techniques.
3
Comprehensive Characterization of Novel Materials
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XRD patterns were measured by a Bruker D8 X-ray diffractometer with Cu Kα radiation (λ = 1.54056 Å) at 40 kV and 40 mA. DR spectra were measured by a LAMBDA 950. PL and PLE spectra at RT-300 °C were characterized by a Hitachi F-4600. PL and PLE spectra at 77 K were measured by a Horiba FL-311 by dipping the sample in liquid nitrogen. EPR data were recorded on a Bruker E500 with the X-band frequencies (≈9.845 GHz) and a microwave power of 0.63 mW. XPS was performed on a Kratos Axis Ultra DLD. IQEs and EQEs were recorded by an Otsuka Photal Electronics QE-2100. A field-emission scanning electron microscope (FE-SEM, Hitachi S-4800) equipped with an energy dispersive X-ray spectroscopy (EDS) system and a CL system (MonoCL4, Gatan) was used to measure the morphology. EL spectra and performances of fabricated pc-NIR-LED devices were measured by an integrating sphere (Labsphere), and data were collected by a multichannel photodetector (MCPD-9800, Otsuka Photal Electronics). Visible images and NIR images were taken by a visible camera (SONY ILCE-7M2K) and an NIR camera (Work Power UC-500M), respectively.
4
Sapphire Nano-membrane Micro-LED Fabrication
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The fabrication of sapphire nano-membrane array and the growth of micro-LED array were observed by field emission scanning electron microscope, Hitachi S-4800. Raman spectra were taken from a LabRAM HV Evolution system using a 633 nm laser to analyze the stress states of un-doped GaN layers. Temperature-dependent PL were measured by Dongwoo Optron micro-PL system with a 325 nm He-Cd laser to estimate IQE. The laser spot size of micro PL system used in this study was 3 μm. Cross-section TEM images of the micro-LEDs on sapphire nano-membranes were observed by Titan G2 80–200. Cross-section STEM measurements were also conducted to observe the core-shell-like micro-LEDs at all facets. TDD (deduced from CL dark spot density), monochromatic CL images, and spatially-resolved CL spectra from each facet of micro-LEDs were analyzed by Gatan Mono-CL4 with an acceleration voltage of 5 kV at room temperature.
5
Nanostructure Electrical and Optical Characterization
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The produced nanoLEDs are electrically and optically characterized inside a Tescan Mira 3 GMH FE-SEM. The electrical contact to individual pixels is established using Kleindiek MM3A micromanipulators equipped with low current measurement kits and connected to a Keithley 2636 source and measuring unit. A Gatan Mono CL 4 cathodoluminescence system equipped with an Andor MCD camera is used for light collection. LabView and Python control of the electrical setup and synchronization to the CCD camera enable automated acquisition of IVL curves inside the SEM.
6
SEM Analysis of PCL and Composite Scaffolds
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The topographies of PCL scaffolds and PCL/RAD composite scaffolds were examined under field emission SEM (JOEL JSM-5310, JOEL, Peabody, MA, USA) at an accelerating voltage of 20 kV. Previously, the surface of the scaffolds were gold-coated (thickness ~150 Å) using a Polaron SC7620 Sputter Coater (Quorum Technologies, East Sussex, UK).
Briefly, constructs after 4 weeks of culture were fixed in 2% (w/v) paraformaldehyde (P6148 Sigma-Aldrich, St. Louis, MO, USA) and dehydrated in successive ethanol (51976, Sigma-Aldrich, St. Louis, MO, USA) washes. Once dehydrated, samples were dried using a CO2 critical point dryer (Emitech K850, Quorum Technologies, East Sussex, UK). Then, dried samples were subsequently coated with a thin layer of graphite (Emitech K950X, Quorum Technologies, East Sussex, UK). Finally, samples were examined under JEDL J-7100 field emission scanning electron microscope (JOEL, Peabody, MA, USA) (Cathodeluminiscence spectrometer GATAN MONO-CL4, EDS detector, retroscattered electron detector) at an accelerating voltage of 15 kV and 20 kV.
Briefly, constructs after 4 weeks of culture were fixed in 2% (w/v) paraformaldehyde (P6148 Sigma-Aldrich, St. Louis, MO, USA) and dehydrated in successive ethanol (51976, Sigma-Aldrich, St. Louis, MO, USA) washes. Once dehydrated, samples were dried using a CO2 critical point dryer (Emitech K850, Quorum Technologies, East Sussex, UK). Then, dried samples were subsequently coated with a thin layer of graphite (Emitech K950X, Quorum Technologies, East Sussex, UK). Finally, samples were examined under JEDL J-7100 field emission scanning electron microscope (JOEL, Peabody, MA, USA) (Cathodeluminiscence spectrometer GATAN MONO-CL4, EDS detector, retroscattered electron detector) at an accelerating voltage of 15 kV and 20 kV.
7
Spatially Resolved Cathodoluminescence of InGaN NWs
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A spatially resolved CL system (Gatan, Mono CL4) with an accelerating voltage of 3 keV and a step size of approximately 2 nm was used to study the local emission of single InGaN NWs. To investigate the spatially resolved CL, as-grown InGaN NWs were detached from the sapphire substrate and dispersed on a cleaned Si wafer, where they were precisely selected and analysed.
8
Characterization of Nanostructured Materials
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CL (monoCL4, Gatan, Inc., Pleasanton, CA, USA) equipment connected to a SEM was used, where the used acceleration voltage was 5 kV. A transmission electron microscopy specimen was prepared using a focused ion beam (Helios nanolab 450 F1). High-resolution transmission electron microscopy (HRTEM, Titan cubed G2 60-300) was employed. The elastic strain was calculated using COMSOL Multiphysics based on the theory of continuum elasticity. For the optical characterization, macro-PL, PLE and TRPL setups with a cryostat were used in the temperature range from 10 to 300 K. The macro-PL was measured with 266 nm fourth-harmonic generation of a Nd:YAG pulsed laser. The PLE was measured using xenon-lamp light dispersed by a monochromator. The TRPL was measured using 266 nm third-harmonic generation of a pulsed-mode Ti:sapphire laser and a streak camera.
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