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Themis 200

Manufactured by Thermo Fisher Scientific

The Themis 200 is a laboratory equipment designed for performing high-performance liquid chromatography (HPLC) analysis. It is a modular system that includes a solvent delivery module, an autosampler, a column compartment, and a UV-Vis detector. The Themis 200 is capable of providing accurate and precise chromatographic separations, making it a suitable tool for a variety of analytical applications.

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6 protocols using themis 200

1

Multimodal Microscopy Analysis of Filter Materials

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The morphology of the filter materials was determined by high-resolution scanning electron microscope (SEM) Zeiss Ultra 55. For high-resolution imaging, in-lens secondary electron detection at an accelerating voltage (AV) of 4 kV was used. To study the chemical composition of samples, the back-scattered electron detector was used at 15 kV AV. Scanning transmission electron microscope (STEM) images were acquired by an FEI Titan Themis 200 microscope equipped with the Super X detector system for an energy-dispersive X-ray spectroscopy (EDX). For STEM measurements, biopolymer material was cut with scissors to fit in a 3 mm–diameter sample holder. Fibers were fixed by placing them between two Au grids.
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2

Structural Analysis of Single Crystals

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We have performed transmission electron microscopy (TEM) to verify the structural quality of the single crystals. The sample for scanning TEM analysis was prepared by gallium focused ion beam (FIB) milling using an FEI Scios FIB scanning electron microscope equipped with an EDAX Hikari Super electron back-scattered diffraction (EBSD) detector. The orientation of the sample was determined by EBSD before milling to cut a lamella in the 〈010〉 plane. High-angle annular dark-field images were recorded using a probe corrected FEI Themis 200 scanning/transmission electron microscope operated at 200 kV with a probe covergence angle of 21.2 mrad and inner/outer collection angles of 88.4 and 200 mrad, respectively.
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3

Structural and Property Characterization

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The thickness and crystal structure were characterized by X-ray reflectivity and high-resolution X-ray diffraction techniques with a Bruker D8 Discover diffractometer using Cu Kα radiation (λ = 0.15419 nm). The cross-sectional crystalline structure was imaged by AC-STEM (FEI Titan Themis 200) operated at 200 kV. The atomic ratio of our sample has been checked by energy-dispersive X-ray spectroscopy (EDS). The magnetic and electrical properties were measured in a magnetic property measurement system (MPMS, Quantum Design) and physical property measurement system (PPMS, Quantum Design), respectively.
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4

Characterizing Magnetic Switching in Ni/Co Multilayers

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Structural properties of the samples were characterized using a Bruker D8 Discover X-ray diffraction (XRD) system with Cu Kα radiation. The HR-TEM were performed with an electron microscope operated at 200 kV (FEI Titan Themis 200). For the current induced magnetization switching and anomalous Hall loop shift measurements, current pulses with an 800 μs pulse width were applied. In-between two adjacent writing pulses, the magnetization state of the Ni/Co multilayer was read by current pulses with the same duration as that of the writing pulse but at a much smaller amplitude of 1 mA. The current density is calculated using the standard parallel resistor model which takes into account the shunting effect.
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5

Characterization of SnS2/BN/CIPS Fe-FET Device

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The morphology of SnS2/BN/CIPS based Fe‐FET device was characterized by optical microscopy (AOSVI, L100‐HK830), The Raman spectra of nanosheets were obtained by Raman spectrometer (Horiba Labarum HR Evolution, 532 nm). The UV‐vis‐NIR absorption spectrometer (Metatest, MStarter ABS) was used to characterize the band gap of SnS2. The STEM specimens were prepared on a FEI Helios 450S dual beam focus ion beam (FIB) workstation, and the cross‐sectional high‐resolution TEM image of SnS2/h‐BN/CIPS heterostructure device was obtained by aberration corrected FEI Titan Themis 200. AFM (Bruker Dimension Icon) and PFM mode were used to measure the thicknesses and ferroelectric properties, respectively. The light sources of different wavelengths were provided by commercially available light‐emitting diode (LED) lamps, whose power densities were measured by FieldMate+PM150X photometer. The electronic and optoelectronic measurements were conducted on a vacuum probe station (TTPX, Lakeshore) using a Keithley 4200SCS semiconductor parameter analyzer.
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6

Comprehensive Multimodal Characterization

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Optical microscope images are obtained by 3D laser scanning confocal microscope (Keyence VK9710K). AFM images and Raman spectra are obtained by a combined AFM/Raman (532 nm) instrument (NT-MDT NTEGRA). The composition and structural analyses are carried out by XRD (Rigaku D/max2200) and X-ray photoelectron spectroscopy (XPS, Thermo Fisher 250 XI). STEM images and corresponding EDS are obtained by FEI Titan Themis 200.
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