Si nanowires were synthesized as described above using a gold (Au) nanocluster-catalyzed chemical vapor deposition (CVD) process. Citrate-stabilized Au colloidal nanoparticles (Ted Pella Inc. 50 nm diameter) were deposited into quartz glass capillary tubes (Sutter Instruments) and used as catalysts. Nanowire growth was performed under the same conditions as described above. Quartz capillary tubes containing silicon nanowires were pulled to produce pipettes with 14-20 MΩ resistances (pipette tip diameter, ∼ 1 μm) and filled with bath solution. These pipettes were then mounted onto the aforementioned electrophysiology setup and current recordings were performed in voltage-clamp mode at 0 mV with the 532 nm laser focused onto single nanowires positioned ∼10-30 μm from the tip of the pipettes, thus minimizing any changes in pipette resistance due to increases in temperature produced by light absorption. Laser pulses between 0.5 and 10 ms durations and 1 to 20 mW powers were used. Raw traces were filtered by averaging every 10 points of data.
Au colloidal nanoparticles
Manufactured by Ted Pella
Sourced in United States
Au colloidal nanoparticles are spherical gold nanoparticles suspended in a liquid medium. They have a diameter range of approximately 5-100 nanometers. These nanoparticles exhibit unique optical and chemical properties due to their small size and high surface-to-volume ratio.
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Lab products found in correlation
3 protocols using au colloidal nanoparticles
1
Si Nanowire Synthesis and Electrophysiology
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Si Nanowire Synthesis and Electrophysiology
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Synthesis of n-type silicon nanowires
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Silicon nanowires were synthesized using a gold (Au) nanocluster-catalyzed chemical vapor deposition (CVD) method. The citrate-stabilized Au colloidal nanoparticles (Ted Pella, USA, 200 nm) were deposited onto Si (100) substrates (Nova Electronic Materials, USA, n-type, 0.001–0.005 Ω cm) as catalysts. Prior to the catalyst deposition, native oxide layers on the Si substrates were removed with hydrofluoric acid (HF) (Sigma-Aldrich, USA) to yield hydrogen-terminated surfaces. The growth of Si nanowires was effectuated at 450–490 oC using silane (SiH4) as the silicon source, phosphine (PH3, 1000 ppm in H2) as the n-type dopant, and hydrogen (H2) as the carrier gas. In a typical synthesis of n-type Si nanowires with a Si/P feeding ratio of 500:1, the flow rates of SiH4, PH3, and H2 were 2, 4, and 60 standard cubic centimeters per minute (sccm), respectively. The growth chamber pressure was maintained at 40 Torr throughout the synthesis. The Si/P feeding ratio was varied by changing the flow rate of PH3 between 2 sccm and 8 sccm while fixing the SiH4 flow rate as 2 sccm to reach Si/P feeding ratios from 1000:1 to 250:1.
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