X pert pro super x ray diffractometer

Powder X-ray diffraction (XRD) measurements were acquired on a Philips X’ Pert Pro Super X-ray diffractometer with Cu Kα radiation. X-ray photoelectron spectroscopy (XPS) was recorded on an ESCALAB MKII with Mg Kα (hυ = 1253.6 eV) as the excitation source. Scanning electron microscopy (SEM) analyses were carried out on a scanning electron microscope (Gemini SEM 500). Transmission electron microscopy (TEM) and scanning transmission electron microscopy-energy dispersive spectroscopy (STEM-EDS) were conducted using a microscope (JEM−2100F, at 200 kV), and aberration corrector high-angle annular dark-field transmission electron microscopy (AC-HAADF-TEM, JEM-ARM200F) was performed at 200 kV with a probe spherical aberration corrector.

Powder XRD patterns were measured by Philips X’Pert Pro Super X-ray diffractometer with Cu-Kα radiation (λ = 1.54178 Å). XPS characterizations of the prepared samples were carried out on JPS-9010MC (JEOL, Japan) with a hemispherical electron energy analyzer (1486 eV Al Kα radiation). TEM images were taken on a Hitachi Model H-7700 microscope at 100 kV. HRTEM images were taken on a JEOL JEM-2100 field-emission higher-resolution transmission electron microscope at 200 kV. The aberration-corrected HAADF-STEM images and EELS analysis were collected on the JEOL ARM-200F field-emission transmission electron microscope operated at 200 kV. EPR spectra for radical detection were obtained on the JEOL JES-FA200 spectrometer.

Nanocrystals dispersed in hexane were dropped on Mo grid for TEM, HRTEM and HAADF investigation, which were performed on JEOL-2010F and JEM-ARM200F with an acceleration voltage of 200 KV. EDS was carried out on Inca Oxford equipped on JEOL-2010F. The specimen prepared by drop-casting on a Si substrate was characterized by PXRD, using a Philips X’Pert PRO SUPER X-ray diffractometer equipped with graphite monochromatized Cu Kλ radiation (λ = 1.54056 Å). The operation voltage and current were kept at 40 kV and 400 mA, respectively. The simulate WZ powder XRD pattern were obtained from Diamond 3.2. Raman spectra were recorded with a Renishaw System 2000 spectrometer using the 514 nm line of semiconductor lasers for excitation. UV-Vis-NIR spectroscopy of the polytypic nanocrystals dispersed in tetrachloroethylene were measured at room temperature using a DUV—3700 UV-vis-NIR spectrometer (Shimadzu). XPS was performed on an ESCA Lab MKII XPS using Mg Ka radiation exciting source.

The X-ray power diffraction (XRD) of obtained nanobelts were characterized by using a Philips X’Pert PRO SUPER X-ray diffractometer which was equipped with graphite monochromatized Cu Kα radiation (λ = 1.54056 Å). The operation voltage was kept at 40 KV, and the current was kept at 400 mA. Diamond 3.2 was used to simulate the wurtzite XRD patterns of CZIS and CZGS. Nanobelts dispersed in hexane were dropped on Mo grid for transmission electron microscope (TEM), high-resolution transmission electron microscope (HRTEM) and high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) investigation observation, which were characterized using JEM-ARM200F with an acceleration voltage of 200 KV. Energy dispersive X-ray spectrometer (EDS) with mapping and line-scan modes was carried out on Inca Oxford equipped on JRM-ARM200F. DUV-3700 UV–vis–NIR spectrometer (Shimadzu) was used to investigated the optical properties of the synthesized NBs. XPS was collected on an ESCALab MKII X-ray photoelectron spectrometer using Mg Ka radiation exciting source. Tapping-mode atomic force microscopy (AFM) images were performed using a DI Innova Multimode SPM platform.

The samples were characterized by different analytic techniques. XRD was performed on a Philips X'Pert Pro Super X-ray diffractometer equipped with graphite-monochromatized Cu Ka radiation (λ = 1.54178 Å). Scanning electron microscope (SEM, Zeiss Supra 40) and JEOL 2010F(s) TEM were applied to investigate the size and morphology. The HRTEM images, EELS, SAED, and EDX elemental mappings were taken on JEMARM 200F Atomic Resolution Analytical Microscope with an acceleration voltage of 200 kV. XPS was performed by an X-ray photoelectron spectrometer (ESCALab MKII) with an excitation source of mg Kα radiation (1253.6 eV). ICP data were obtained by an Optima 7300 DV instrument. Ultraviolet photoelectron spectroscopy was carried out at the BL11U beamline of National Synchrotron Radiation Laboratory in Hefei, China. The X-ray absorption spectra of Ni and S K-edges were obtained at the beamline 4B7A station of Beijing Synchrotron Radiation Facility (China).

Spherical aberration-corrected high-angle annular dark-field scanning TEM (HAADF-STEM) and energy-dispersive spectroscopy were conducted using an FEI Titan Themis (300 kV) microscope. TEM and high-resolution TEM (HRTEM) were performed using a JEM-2100F microscope operating at 200 kV acceleration. Field-emission scanning electron microscopy images were acquired using a Gemini SEM 500 scanning electron microscope. Powder X-ray diffraction patterns were measured using a Philips X’Pert Pro Super X-ray diffractometer equipped with a Cu Kα radiation source (λ = 1.54178 Å). XPS was recorded using a Thermo ESCALAB 250Xi equipped with an Al Kα (hν = 1486.6 eV) excitation source. The binding energies obtained from XPS spectra were corrected with respect to the C 1s peak at 284.5 eV. Inductively coupled plasma atomic emission spectroscopy (ICP–OES) was performed using an Optima 7300 DV instrument (Perkin-Elmer).