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Summit 11600 ap

Manufactured by Microtech

The Summit-11600 AP is a high-precision laboratory instrument designed for analytical applications. It offers advanced features and capabilities to support various scientific research and testing needs. The core function of this product is to provide accurate and reliable measurements for a wide range of samples and applications. Detailed technical specifications and intended use cases are not available within the scope of this unbiased and factual description.

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3 protocols using summit 11600 ap

1

Comprehensive Characterization of Ti3C2Tx Thin Films

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The surface morphologies
of Ti3C2Tx thin
films were visualized by optical microscopy (Zeiss AXIO Scope), scanning
electron microscopy (SEM) (Nova Nano, FEI), and atomic force microscopy
(AFM) (Bruker, Dimension Icon SPM). A Bruker D8 Advance XRD system
with CuKα radiation (λ = 1.5406 Å) was employed to
obtain the X-ray diffraction (XRD) patterns of Ti3C2Tx thin films. A focused ion beam
(FIB) technique (Helios G4, FEI) was used to fabricate the transmission
electron microscopy (TEM) sample. The TEM image was obtained using
a Titan G2 60-300 (FEI), equipped with a spherical aberration corrector
for an imaging system, at an acceleration voltage of 300 kV. Raman
spectra were collected by a Wintec Apyron Raman spectrometer with
a 633 nm laser source excitation. The hydrophilicity of MoS2 films was demonstrated by testing static contact angles using a
contact angle system (OCA 35, DataPhysics, Filderstadt, Germany).
A VMP3 multichannel electrochemical workstation (Bio-Logic) was used
to measure the frequency-dependent capacitance and phase angle of
the electrolyte. An Agilent B1500A semiconductor device analyzer equipped
with a microprobe station (Summit-11600 AP, Cascade Microtech) was
employed to determine the performances of transistors.
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2

Characterization of Thin Film Materials

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Fourier transform infrared spectra (FT-IR) of the aluminum oxide films were obtained by a Nicolet iS10 FT-IR (Thermo Scientific) Spectrometer. Crystallinity and cross-sectional images of tin oxide films was investigated by a Titan ST (FEI) transmission electron microscope. The chemical composition of the aluminum oxide films was analyzed by x-ray photoelectron spectroscopy (XPS) using an Axis Ultra DLD spectrometer (Kratos Analytical, UK). The electrical properties of tin oxide TFTs and CMOS inverters were performed at room temperature in dark using a semiconductor characterization system (Keithley 4200-SCS) and a Cascade Microtech (Summit-11600 AP) microprobe station.
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3

Characterization of Cu2O/SnO Bilayer Films

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The capacitance curve for the ATO dielectric was measured by a capacitance meter (Agilent E4981A). The electrical performance of p- and n-type TFTs and CMOS inverters were characterized at room temperature in dark using a semiconductor device analyzer (Agilent B1500A) and a microprobe station (Summit-11600 AP, Cascade Microtech). The chemical composition of the Cu2O/SnO bilayer films was analyzed by x-ray photoelectron spectroscopy (XPS) using an Axis Ultra DLD spectrometer (Kratos Analytical, UK). Raman spectra were analyzed at room temperature at wavenumber range from 100 to 800 cm−1 by LabRAM ARAMIS Raman Microscope (Horiba Scientific) and a 473 nm cobalt laser source was used for excitation. Cross-sectional TEM sample was prepared by a focused ion beam (FIB) from Quanta 3D FEG (FEI). About 500 nm amorphous carbon layer was deposited by a carbon coater (Emitech K950X) as protection layer before performing the cross-sectional sample preparation by FIB. High resolution TEM image of bilayer sample was investigated by a Titan ST (FEI) transmission electron microscope. The UV-Vis transmittance spectra was measured by Evolution 600 UV-Vis Spectrophotometer (Thermo Scientific).
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