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Jsm 7500fa microscope

Manufactured by JEOL
Sourced in Japan

The JSM-7500FA is a high-performance field emission scanning electron microscope (FE-SEM) manufactured by JEOL. It is designed to provide high-resolution imaging and analytical capabilities for a wide range of applications. The JSM-7500FA features a field emission electron gun, which allows for the generation of a stable, high-brightness electron beam. This enables the microscope to achieve a high resolution down to 1.0 nm at 15 kV. The instrument is equipped with various detectors, including a secondary electron detector and a backscattered electron detector, which can be used to obtain topographical and compositional information from samples. The JSM-7500FA is suitable for the analysis of a wide range of materials, such as metals, semiconductors, ceramics, and biological samples.

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3 protocols using jsm 7500fa microscope

1

Scanning Electron Microscope EDS Analysis

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A JEOL JSM-7500FA microscope
(Jeol, Tokyo, Japan) in a high-vacuum
mode, with an acceleration voltage of 5 kV and backscattered electrons
was used for the EDS analysis.
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2

Pt Nanozymes Characterization by SEM and XPS

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SEM characterization of glassy carbon substrate surface covered by Pt nanozymes was performed by using JEOL JSM-7500FA microscope.
XPS analysis was performed using an AXIS ULTRA DLD (Kratos Analytical) photoelectron spectrometer equipped with a monochromatic AlKα source (1486.6 eV) operated at 150 W (10 kV, 15 mA), as already described in a previous report [41 (link)]. Further details are reported in the supporting info.
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3

Characterization of Printed Galinstan Patterns

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Optical microscope observations were performed using Leica DM6000 Optical microscope. Field emission scanning electron microscope (FE-SEM) observations were performed using a JEOL JSM-7500FA microscope with an EDX solid-state X-ray detector. Transmission electron microscope (TEM) images, selected area electron diffraction (SAED) patterns were obtained using a JEOL JEM-2011. The surface roughness of the sample together with the thickness was analyzed using a JPK Nanowizard atomic force microscope (AFM) in the tapping mode. The crystal structure of printed galinstan pattern was evaluated by X-ray diffraction (XRD) (GBC MMA diffractometer) using Cu Kα radiation. The UV-vis absorption spectra were measured by the means of the diffuse reflection mode using a Shimadzu 2550 UV-vis spectrometer equipped with an integrating sphere.
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