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Trimethyl aluminum

Manufactured by Strem Chemicals
Sourced in United States

Trimethyl aluminum is a colorless, pyrophoric, and moisture-sensitive liquid. It is a common organometallic compound used in various chemical processes, particularly in the semiconductor industry for the deposition of aluminum thin films.

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3 protocols using trimethyl aluminum

1

Synthesis of Molecule A via Established Procedure

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Molecule A was synthesized according to a previously published procedure [3 (link)]. Zinc acetate dihydrate (Alfa Aesar, Tewksbury, MA, USA), trimethyl aluminum (Strem Chemicals, Newburyport, MA, USA; prepackaged in a 50 mL Swagelok cylinder), ultrahigh purity water (Strem Chemicals, Newburyport, MA, USA; prepackaged in a 50 mL Swagelok cylinder), acetonitrile (Sigma-Aldrich, Milwaukee, WI, USA), methanol (Sigma-Aldrich, Milwaukee, WI, USA), dimethyl sulfoxide (DMSO, Alfa Aesar), ethanol (Koptec), hydrochloric acid (Sigma-Aldrich, Milwaukee, WI, USA), zirconium (IV) propoxide solution (Sigma-Aldrich, Milwaukee, WI, USA), nitric acid (Avantar, Radnor, PA, USA), polyethylene glycol bisphenol A epichlorohydrin copolymer (Sigma-Aldrich, Milwaukee, WI, USA) were purchased from their respective suppliers, in parentheses, and used as received. Non-conductive glass was purchased from Hartford Glass Co. (Hartford, CT, USA). Vac’n Fill Syringe (65209) and Melatonix films (1170-25) were purchased from Solaronix (Aubonne, Switzerland). Micro glass cover slides (18 × 18 mm) were purchased from VWR (Radnor, PA, USA).
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2

Air-Sensitive Organometallic Synthesis

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All reactions other than ligand syntheses were performed under an inert atmosphere of argon using either glovebox or Schlenk line techniques. Toluene and hexane were distilled from sodium and phosphorus pentoxide respectively. Trimethylaluminum and trimethylgallium were purchased from Strem Chemicals and used as received.
1H and 13C NMR were obtained at 500 MHz and 125 MHz, respectively, in benzene-d6. Infrared spectra were obtained using Nujol as the medium. Elemental analyses were performed by Midwest Microlab, Indianapolis, IN. Melting points were obtained on a Haake-Buchler HBI digital melting point apparatus and were uncorrected.
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3

Fabrication of Thin-Film Heterostructures

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The quartz substrate with a size of 25 mm by 50 mm is cleaned by bath ultrasonication using acetone, ethanol, and deionizing water for 10 min. The Al2O3 and HfO2 layers are deposited by atomic layer deposition (R200, PICOSUN) at 255°C using trimethylaluminum (Strem Chemicals) and tetrakis(dimethylamido)hafnium(IV) (Strem Chemicals) as precursors, respectively. The oxidizing agent is H2O. The precursor carrier gas is N2 (99.999% purity, Shanghai Weichuang Gas). The Ag-Ge alloy and SiO2 layers are deposited by electron beam evaporation (PVD 75, Kurt J. Lesker) in vacuum.
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