D max ga x ray diffractometer

X-ray diffraction (XRD) was implemented using an X-ray diffractometer (Rigaku D/max ga X-ray diffractometer in Tokyo, Japan), wherein Cu Ka (λ = 0.15406 nm) was the radiation source. Raman spectra were recorded using a Renishaw system (Renishaw, London, UK) with a 514 nm excitation wavelength. Scanning electron microscopy (SEM) was performed using a Hitachi S-4800 (JEOL Ltd., Tokyo, Japan), which was provided with energy-dispersive X-ray spectroscopy (EDS) under 15 kV at various magnifications. The composition of the CMZTSSe was characterized by X-ray photoelectron spectroscopy (XPS) (Thermofisher, Waltham, MA, USA) with monochromated Al Kα radiation. An ultraviolet–visible–near-infrared (UV–vis–NIR) spectrophotometer (UV-3101PC, Tokyo, Japan) was used to characterize the optical properties of the CMZTSSe. A Hall-effect measurement system (Lake shore 7600 Hall, Irvine, CA, USA) was used to test the electrical performance. The current–voltage measurements under AM 1.5 G simulated sunlight illumination (Model 91160, Newport, Irvine, CA, USA) was performed to characterize the electrical properties of the solar cell. An external quantum efficiency (EQE) measurement system was applied to measure the spectral response of the device (QEX10, Newport, Irvine, CA, USA).

The morphology of the as-prepared samples was characterized via field emission scanning electron microscopy (FESEM, HITACH S4800) and transmission electron microscopy (TEM, PHILIPS F200). Energy dispersive spectroscopy (EDS) mapping images and line scanning images were recorded by a FEI Titan ChemiS TEM equipped with a probe-corrector and a Super-X EDS detector system. X-ray photoelectron spectroscopy (XPS) was performed by employing a Thermo ESCALAB 250Xi spectrometer with a monochromatic Al Kα line (1486.6 eV). The crystal structures of the materials were determined using a high power X-ray diffractometer (XRD) on a Rigaku D/max-ga X-ray diffractometer, where the Cu Kα radiation was 1.54 Å.