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Phi versaprobe 2

Manufactured by Physical Electronics
Sourced in Japan, United States

The PHI VersaProbe II is a state-of-the-art X-ray photoelectron spectroscopy (XPS) system designed for advanced materials analysis. It offers high-performance capabilities for the characterization of surfaces and thin films.

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7 protocols using phi versaprobe 2

1

Nitrogen-Doped Titanium Dioxide Structural Analysis

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The crystal structure of N-TiO2 was studied by powder X-ray diffraction (XRD) (PANalytical Model X’Pert PRO diffractometer, PANalytical, Almelo, The Netherlands) with Cu Kα radiation (λ = 1.54 Å) by scanning at a rate of 2° (2θ) min−1. X-ray photoelectron spectroscopy (XPS) was utilized to study the nitrogen doping of N-TiO2. XPS was conducted by a Phi Versaprobe II, Ulvac-PHI, Kanagawa, Japan utilizing monochromatic source Mg Ka.
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2

Characterization of AlN Thin Films by Spectroscopic Techniques

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The thickness and refractive index (R.I.) of AlN thin films were measured by spectroscopic ellipsometry (SE, M-2000DI, J.A. Woolam, Lincoln, NE, USA) and the values were fit using the spectra measured at 3 different angles (55°, 65°, and 75°). The chemical composition and bonding states of AlN thin films were characterized by X-ray photoelectron spectroscopy (XPS). XPS analysis was performed using a PHI VersaProbe II (ULVAC-PHI, Chigasaki, Kanagawa, Japan) equipped with a monochromatic Al Kα X-ray source (EPhoton = 1486.6 eV). To remove surface contaminants, Ar gas cluster ion beam (GCIB) sputtering with a beam energy of 1 kV and the cluster size of 2500 atoms was employed. The elemental composition of the films was calculated based on the peak area and atomic sensitivity factor [23 ]. Surface roughness of AlN films was determined by atomic force microscope (AFM) (Veeco Multimode V. Non-contact AFM, Veeco, Plainview, NY, USA).
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3

XPS Analysis of Chemical Surfaces

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The chemical surface compositions were analyzed by high-resolution X-ray photoelectron spectroscopy (XPS) using a PHI VersaProbe II (Ulvac-phi, Inc., Chigasaki, Japan) with a monochromatic Al-Kα source, and photon energy of 1486.6 eV. The X-ray source used had a power of 100 W, whereby the sample surface was scanned with a beam size of 100 µm over an area of 1400 × 200 µm². High-resolution spectra of the coated and uncoated samples (n = 6) were recorded with a pass energy of 46.95 eV and a step size of 0.1 eV, with a constant electron take off angle of 45°. The spectrometer was calibrated to the copper and gold reference lines (932.62 eV and 83.96 eV), whereas the minimum detector resolution measured at the silver peak Ag (3d5/2) was 0.6 eV, with a pass energy of 23.5 eV. The measurements were obtained at room temperature and a base pressure of 2 × 10−6 Pa. To avoid charging effects, all measurements were carried out with charge compensation by utilizing a cold cathode electron flood source and low-energy argon ions. All spectra were shifted to the carbon peak (C1s) to 284.6 eV. The data analyses were performed using the software MultiPak (version 9.9.0.8, Ulvac-phi, Inc., Chigasaki, Japan).
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4

Spectroscopic Analysis of Materials

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IR spectra were recorded on the ALPHA FT-IR Spectrometer (Bruker Corporation) and analyzed using the OPUS v. 6.5.92 software. X-ray photoelectron spectroscopy (XPS): XPS analysis was performed using the PHI VersaProbe II (Physical Electronics) at MIT Centre for Materials Science and Engineering (CMSE). The instrument, equipped with a monochromatic aluminum X-ray source, was operated with the pass energy of 187.85 eV and chamber pressure under 2 × 10−9 Torr during the analysis. Photoelectrons were collected at an angle of 45.0° from the surface normal. Samples were dehydrated through lyophilization overnight. Upon removal from the lyophilizer, samples were transported to the XPS equipment in a vacuum desiccator and analyzed immediately.
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5

X-ray Photoelectron Spectroscopy Protocol

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The X-ray photoelectron spectroscopy measurements were performed with a PHI VersaProbe II apparatus (Physical Electronics, MN, USA). The samples were irradiated with a focused monochromatic Al Kα (E = 1486.6 eV) X-ray beam with a diameter of 100 μm, and the beam was rastered over the area of 400 × 400 μm2. Analyzer’s pass energy was set to 46.95 eV, and double neutralization with electrons and low energy monoatomic Ar+ ions was used to avoid charging effects. Spectra were referenced to the neutral (C–C) carbon C 1 s peak, at a binding energy of 284.80 eV.
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6

Comprehensive Material Characterization Techniques

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A scanning electron microscope (SEM) (Nova NanoSEM 230, FEI Co.) equipped with an energy dispersive X-ray spectrometer (EDS) was used to study the film morphology and elemental composition. Elemental compositions are reported as weight percentages. An X-ray photoelectron spectroscope (XPS) (PHI VersaProbe II, Physical Electronics) equipped with Ar sputtering was used to determine the chemical states present in the material. Film crystallinity was determined using an X-ray diffractometer (XRD) (d8 Advance Diffractometer, Bruker) with Cu Kα radiation (0.15418 nm wavelength) at 40 kV and 40 mA. An ultraviolet-visible spectrophotometer (UV-vis) (Shimadzu UV-2600) was used to determine the absorbance and band gap of the films.
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7

X-ray Photoelectron Spectroscopy Analysis

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An XPS (PHI VersaProbe II, Physical Electronics Inc., Chanhassen, MN, USA) was used with a monochromatic Al Kα X-ray source with a 0.47 eV system resolution.
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