AFM images were collected for characterizing morphology of scratch and scratch-etched Si wafer. NanoScope III microscope (Digital Instruments, Inc., Santa Barbara, CA) and silicon cantilevers TAP300Al-G (Ted Pella, INC, Redding, CA) having force constant 40 N/m and resonance frequency of 300 kHz were used for imaging in tapping mode. The images were processed using Gwyddion software.
Nanoscope 3 microscope
Manufactured by Digital Instruments
Sourced in Germany, United States
The Nanoscope III is a scanning probe microscope that uses atomic force microscopy (AFM) to capture high-resolution images of surfaces at the nanoscale level. It provides detailed topographical information about the sample under investigation.
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Lab products found in correlation
4 protocols using nanoscope 3 microscope
1
Characterization of Scratch-etched Silicon Wafers
2
AFM Characterization of Microgel Samples
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AFM measurements were performed on a nanoscope
III microscope (Digital Instruments, now Bruker, Karlsruhe, Germany)
at room temperature in tapping mode. The cantilevers (Tap300 Al-G;
Budget Sensors, Innovative Solutions Bulgaria Ltd., Sofia, Bulgaria)
had a radius of ≤10 nm, a frequency of 300 kHz, and a spring
constant of 40 N/m. For sample preparation, a silicon wafer (Siegert
Wafer GmbH, Aachen, Germany) was coated with 50 μL of a diluted
microgel suspension and dried at room temperature in the air.
III microscope (Digital Instruments, now Bruker, Karlsruhe, Germany)
at room temperature in tapping mode. The cantilevers (Tap300 Al-G;
Budget Sensors, Innovative Solutions Bulgaria Ltd., Sofia, Bulgaria)
had a radius of ≤10 nm, a frequency of 300 kHz, and a spring
constant of 40 N/m. For sample preparation, a silicon wafer (Siegert
Wafer GmbH, Aachen, Germany) was coated with 50 μL of a diluted
microgel suspension and dried at room temperature in the air.
3
Atomic Force Microscopy of BC Composites
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Atomic force microscope images of the BC composites were collected in tapping mode using a Nanoscope III microscope from Digital Instruments (Santa Barbara, CA, USA), with antimony‐doped silicon probes in contact mode in air. Images were captured at a scanning rate of 1.0 Hz and resolution of 512 pixels × 512 pixels. The roughness parameters, roughness average (Ra) and root mean square (RMS), were calculated using the average of three scans in different places for each sample in 10 μm × 10 μm area.
4
Topographical Analysis of Thin Films
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The topography of each film was evaluated by atomic force microscopy (AFM) with a multimode Nanoscope III microscope (Digital Instruments). Scans were performed in tapping mode using a standard silicon AFM probe (µmasch, HQ:NSC14/Al BS), with a resonance frequency of 160 kHz and a constant force of 5.0 N/m. The open-source software Gwyddion version 2.47 was used to generate the two-and three-dimensional images and to calculate the highest peak height and mean surface roughness (Ra), i.e. the arithmetic average of absolute profile heights' values over the length evaluation.
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