In this study, the phase structure and purity of the mesoporous Cu-doped FeSn–G–SiO2 (CFSGS) nanocomposite were investigated by X-ray diffraction (XRD; Rigaku, Japan) with Cu-Kα radiation (λ = 1.5406 Å) at 40 kV and 30 mA across a 2θ range of (20–70)°. Scanning electron microscopy (SEM) was used to examine the morphologies of the samples that were acquired. EDS analysis was performed by SEM (JSM-76710F, JEOL, Japan), transmission electron microscopy (TEM) (JEM-4010, JEOL, Japan), and high-resolution TEM (HRTEM) (JSM-76710F, JEOL, Japan), operating at an accelerating voltage of 300 kV. X-ray photoelectron spectroscopy (XPS), Diffuse Reflectance Spectroscopy (DRS), and Raman spectroscopy (RAMAN) analyses were performed utilizing WI Tec. alpha 300 series. Porous characterization of CFSGS structure was performed with a full analysis of N2 adsorption/desorption tests (BELSORP-max, BEL Japan Inc.). Electrochemical measurements were made by PGP201 Potentiostat (A41A009), Volta lab™, Denmark.
Jsm 76710f
Manufactured by JEOL
Sourced in Japan
The JSM-76710F is a high-resolution field emission scanning electron microscope (FE-SEM) manufactured by JEOL. It is designed to provide high-quality, high-magnification imaging of a wide range of samples. The JSM-76710F features a LaB6 electron source, advanced electron optics, and a variety of imaging modes to accommodate diverse research and analytical needs.
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Lab products found in correlation
3 protocols using jsm 76710f
1
Characterization of Mesoporous Cu-doped FeSn-G-SiO2 Nanocomposite
2
Comprehensive Characterization of Synthesized Products
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The phase structure
and purity of the as-synthesized products were
examined by X-ray diffraction (XRD; Rigaku, X-ray Diffractometer)
with Cu Kα radiation (λ = 1.5406 Å) at 40 kV, 30
mA over the 2θ range 20–70°. Morphologies were studied
utilizing scanning electron microscopy (SEM) and energy-dispersive
X-ray spectroscopy (EDS) analysis by utilizing SEM (JSM-76710F, JEOL,
Tokyo, Japan), transmission electron microscopy (TEM) (JEM-4010, JEOL,
Tokyo, Japan), and high-resolution TEM (HRTEM) (JSM-76710F, JEOL,
Tokyo, Japan) operating at a 300 kV accelerating voltage. X-ray photoelectron
spectroscopy (XPS), differential reflectance spectroscopy (DRS), and
Raman spectroscopy (RAMAN) analyses were performed utilizing WI Tec.
alpha300 series. Porous characterizations of ZAG and ZAGS structures
were obtained with a full analysis of N2 adsorption–desorption
tests (BELSORP-max, BEL Japan Inc.). (PG201, Potentiostat, Galvanostat,
VoltaLab, Radiometer, Denmark.)
and purity of the as-synthesized products were
examined by X-ray diffraction (XRD; Rigaku, X-ray Diffractometer)
with Cu Kα radiation (λ = 1.5406 Å) at 40 kV, 30
mA over the 2θ range 20–70°. Morphologies were studied
utilizing scanning electron microscopy (SEM) and energy-dispersive
X-ray spectroscopy (EDS) analysis by utilizing SEM (JSM-76710F, JEOL,
Tokyo, Japan), transmission electron microscopy (TEM) (JEM-4010, JEOL,
Tokyo, Japan), and high-resolution TEM (HRTEM) (JSM-76710F, JEOL,
Tokyo, Japan) operating at a 300 kV accelerating voltage. X-ray photoelectron
spectroscopy (XPS), differential reflectance spectroscopy (DRS), and
Raman spectroscopy (RAMAN) analyses were performed utilizing WI Tec.
alpha300 series. Porous characterizations of ZAG and ZAGS structures
were obtained with a full analysis of N2 adsorption–desorption
tests (BELSORP-max, BEL Japan Inc.). (PG201, Potentiostat, Galvanostat,
VoltaLab, Radiometer, Denmark.)
3
Characterization of Synthesized Nanomaterials
Check if the same lab product or an alternative is used in the 5 most similar protocols
+ Expand
We examined the
phase structure and purity of as-synthesized products by X-ray diffraction
(XRD; Rigaku, X-ray diffractometer) with Cu Kα radiation (λ
= 1.5406 Å) at 40 kV, 30 mA over 2θ units for 20–70°.
We investigated the morphologies of the obtained samples using field-emission
scanning electron microscopy and EDS (energy-dispersive X-ray spectroscopy)
analysis provided by an SEM (scanning electron microscope) (JSM-76710F,
JEOL, Tokyo, Japan), a transmission electron microscope (TEM) (JEM-4010,
JEOL, Tokyo, Japan), and a high-resolution TEM (HRTEM) (JSM-76710F,
JEOL, Tokyo, Japan) operated at a 300 kV accelerating voltage. We
did X-ray photoelectron spectroscopy (XPS), diffuse reflectance spectroscopy
(DRS), and Raman spectroscopy (RAMAN) analyses by using WI Tec Alpha
300 series.
phase structure and purity of as-synthesized products by X-ray diffraction
(XRD; Rigaku, X-ray diffractometer) with Cu Kα radiation (λ
= 1.5406 Å) at 40 kV, 30 mA over 2θ units for 20–70°.
We investigated the morphologies of the obtained samples using field-emission
scanning electron microscopy and EDS (energy-dispersive X-ray spectroscopy)
analysis provided by an SEM (scanning electron microscope) (JSM-76710F,
JEOL, Tokyo, Japan), a transmission electron microscope (TEM) (JEM-4010,
JEOL, Tokyo, Japan), and a high-resolution TEM (HRTEM) (JSM-76710F,
JEOL, Tokyo, Japan) operated at a 300 kV accelerating voltage. We
did X-ray photoelectron spectroscopy (XPS), diffuse reflectance spectroscopy
(DRS), and Raman spectroscopy (RAMAN) analyses by using WI Tec Alpha
300 series.
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