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Cu kα1

Manufactured by Rigaku

The Cu Kα1 is a X-ray source that generates X-rays using a copper target. It produces a primary X-ray wavelength of 1.54 Angstroms, which is commonly used in X-ray diffraction applications.

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2 protocols using cu kα1

1

Characterization of Pd Catalysts by CO Pulse and XAFS

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The dispersion ratio and particle diameter of Pd catalysts were characterized using CO pulse (BEL CAT II; Microtrac-Bel Japan Inc.). Before measurements, the catalyst sample was pre-treated under He flow at 473 K for 1 h. After the treatment, the temperature was decreased to 323 K with He, and 10% CO was pulsed. The results of CO pulse are presented in Supplementary Materials Table S9. TOF-s and TOF-p were calculated with the number of surface Pd atoms and that of interfacial Pd atoms. Detailed procedures are presented in Supplementary Materials. Pd and Ce K-edge in-situ X-ray adsorption fine structure (in-situ XAFS) spectra were recorded on BL14B2 in SPring-8 (Hyogo, Japan). The 3 wt% Pd/CeO2 catalyst was pressed into a pellet. Then the pellet was attached to a cell prepared for in-situ measurements, as shown in Figure S18. The pellet sample was pre-treated with Ar flow at 723 K for 30 min. Measurements were conducted with 5 mA current and CH4: H2O: Ar = 1: 2: 117, total 120 SCCM flow at 473 K. Software (Athena ver. 0.8.056, Artemis ver. 0.8.012) was used to analyze the obtained XAFS spectra. Phase and morphology of CeO2 disc for AC impedance measurements were analyzed by X-ray diffraction (XRD, MiniFlex 600, Cu Kα1, Rigaku) and scanning electron microscopy (FE-SEM, Quanta 200 FEG, FEI Company).
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2

Structural Analysis of Thin Film Oxides

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Crystallinity of the fabricated thin films were investigated by grazing incidence X-ray diffraction analyses (Cu Kα1, ATX-G, Rigaku Co.), which revealed that all oxide layers were amorphous in nature expect for NiO polycrystalline film. Cross-sectional thin-film samples for TEM observations were prepared by focused-ion-beam (FIB) micro-sampling technique, in which the multilayer structure region of the TFTs was cutout and thinned by FIB (FB-2000A, HITACHI) to obtain samples for cross-sectional observation. The cross-sectional microstructure and electron diffraction pattern of the a-WO3 devices were examined by high-resolution TEM and STEM (JEM-ARM200F, 200 kV, JEOL Ltd.).
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