Jem 2100f tem

Transmission electron microscopy (TEM) images were investigated using a JEOL JEM-2100F TEM (Tokyo, Japan). Fourier transform infrared spectra (FT-IR) were performed on a Spectrum One (PerkinElmer, Shelton, CT; USA) instrument to determine the functional groups of the absorbents. Scanning electron microscopic (SEM) image was obtained on a Hitachi S-4800 SEM (Tokyo, Japan), and the element mapping was analyzed on an Energy Dispersive X-Ray Spectroscopy (EDX) detector. The crystal structure of the particles was characterized by a D8FOCUS X-ray diffractometer (Bruker, Germany) with Cu Kα radiation (k = 1.5406 Å). An UV-Vis T6 spectrometer (Beijing, China) was used to measure the concentration of phosphate. The pH values of solution were tested by Sartorius PB 220 pH meter (Gottingen, Germany).

Philips XL30 SEM (Philips, Amsterdam, Netherlands) was employed to view surface morphologies of the grown InP NWs. Selected-area electron diffraction (SAED), bright field (BF) transmission electron microscopy (TEM), and HRTEM were carried out to determine crystal structure and to examine microstructures of the grown InP NWs using a JEOL JEM2100F TEM (JEOL Ltd., Tokyo, Japan) operating at 200 kV. The incident electron beam was along the $\left[1\overline{1}0\right]$ direction. Specimens for HRTEM examinations were prepared by peeling off the InP NWs from the surface of the substrate, ultrasonicating them into anhydrous ethanol for several seconds, and dispersing the finished solution onto a holey-carbon-film-coated copper grid.

Field emission scanning electron microscopy (SEM, FEI Nova 400, FEI Company, Hillsboro, OR, USA) and transmission electron microscopy (TEM, JEM 2100F TEM, Jeol, Tokyo, Japan) were both used to examine the materials’ microstructures and morphology. X-ray powder diffraction (XRD) (PANalyticalX’Pert Powder, Malvern Panalytical, Malvern, UK) was used to determine the crystal structure of the synthesized product. The X-ray source was an Escalab (250Xi) (Thermo Fisher Scientific, Waltham, MA, USA) with an Al Ka (1486.5 eV). The specific surface area calculation was made with a Quantachrome Instrument (Version 5.12, Boynton Beach, FL, USA) and the Brunauer-Emmett-Teller (BET) method.

All X-ray diffraction (XRD) data were obtained by X-ray diffractometer (DX-2700,
Dandong Haoyuan) utilizing a Cu-Kα1 source with a step of 0.02°.
Note that XRD measurement of electrodes was different from that of LTP/C powder.
The whole electrode consisting of active material, Super P carbon and
polytetrafluoroethylene (PTFE), after washing with distilled water and drying
for several hours, was directly used to perform the XRD test. No signal of
stainless steel mesh was observed probably due to the thick electrode film, as
reported in our previous work19 . Before disassembling, each cell
was charged to 1.6 V and kept at that voltage for more than
2 hrs. Microstructural studies of electrodes after different cycles were
conducted using a scanning electron microscope (FEI Quanta 250 FEG, FEI Inc.).
TEM and high resolution TEM (HRTEM) images of as-prepared LTP/C powder were
obtained using JEOL JEM-2100F TEM with a LaB₆ filament as the
electron source. Brunauer-Emmet-Teller (BET) surface area of the samples was
detected by nitrogen adsorption/desorption at -196 °C using a
Builder SSA-4200 apparatus. Raman spectra were investigated with LabRAM Aramis
(HORIBA Jobin Yvon) spectrometer. The electronic conductivity was measured by
the four-point probe method (Guangzhou 4 Probes Tech, RTS-9). Thermogravimetric
analysis (TGA) was performed on a STA 449C with a heating rate of
10 °C/min from 25 to 800 °C.

The VO₂ film was synthesized by direct current magnetron sputtering and thermal oxidation. First, a metal vanadium thin film was deposited under an Ar atmosphere of 1.2 × 10⁻¹ Pa. The obtained metal vanadium film was then put into an annealing furnace for oxidation in a mixture gas of Ar and air (70 sccm) at 470 °C.
MoTe₂ was purchased from 2D Semiconductors Inc. and thinned by mechanical exfoliation.
All the morphological structures of the devices were characterized by a Nikon optical microscope. AFM images were taken by a Bruker Dimension Edge in tapping mode. XRD measurements were performed by using a Bruker D8 Discover. The Raman spectra were obtained by a Lab Ram HR800 from HORIBA with a 514 nm excitation laser. The TEM images and EDS mapping were obtained by a JEOL JEM2100F TEM with an EX-24063JGT EDS.

The TEM samples were prepared by directly dropping the suspension of different samples onto the full carbon-coated copper grids (200 mesh), followed by drying at ambient conditions. The TEM, HRTEM and HAADF-STEM images were taken on a JEOL JEM-2100F TEM operated at 200 kV. The aberration-corrected HAADF-STEM images were obtained by a JEOL ARM200F (JEOL, Tokyo, Japan) aberration-corrected transmission electron microscope operated at 200 kV with a cold field emission gun and double hexapole C_s correctors (CEOS GmbH, Heidelberg, Germany). The XPS samples were prepared by directly dropping the suspension of different samples onto the Si substrates, followed by drying at ambient conditions. The XPS measurements were carried out on a VG ESCALAB 220i-XL instrument (base pressure <10⁻⁵ mbar) equipped with a monochromatic Al Kα (1486.7 eV) X-ray source. The XRD characterization was conducted on an X-ray diffractometer (Shimadzu, XRD-6000) operated at 30 mA and 40 kV. The concentration of catalyst was estimated by the inductively coupled plasma-optical emission spectroscopy (ICP-OES, Dual-view Optima 5300 DV). The catalysts after the durability measurements were collected from the electrodes with sonication in ethanol and then used for the TEM characterization.