S4800 field emission scanning electron microscope

The current density-voltage (J-V) characterization of PSCs was carried out using a Keithley 2400 source meter under a simulated AM 1.5 illumination (100 mW cm⁻², NewPort, 94043 A SOLAR SIM) at a scan rate of 200 mV s⁻¹. The incident-photon-to-current efficiency (IPCE) measurement was performed through an Enlitech QE-R Quantum Efficiency Measurement System (QE-R3018). The crystal structures of the MAPbI₃ films were characterized by using a Bruker D8 ADVANCE X-ray diffraction (XRD) equipment. The morphology of the MAPbI₃ layer was obtained using a Hitachi S-4800 field emission scanning electron microscope (SEM) and a Bruker atomic force microscope (AFM). Energy dispersive spectroscopy (EDS) was conducted by using an EDS device connected to SEM. The thicknesses of the NiO_x, MAPbI₃ and PC₆₁BM films were determined using a Bruker DektakXT Stylus Profiler. The photoluminescence (PL) and time-resolved PL (TRPL) spectra were measured by using an Edinburgh FLS980 fluorescence spectrophotometer with an excitation at 550 nm. The impedance characteristics of the devices were measured via a Wayne Kerr 6500B analyzer.

The current density–voltage (J–V) characterization of PSC was carried out using a Keithley 2400 source meter under a simulated AM 1.5 illumination (100 mW·cm⁻², NewPort, 94043A SOLAR SIM, Irvine, CA, USA) at a scan rate of 200 mV·s⁻¹. The incident-photon-to-current efficiency (IPCE) measurement was performed through an Enlitech QE-R Quantum Efficiency Measurement System (QE-R3018, Taiwan, China). The crystal structures of the MAPbI₃ films were characterized by using a Bruker D8 ADVANCE X-ray diffraction (XRD) device (Karlsruhe, Germany). The morphology of the MAPbI₃ layer was obtained using a Hitachi S-4800 field emission scanning electron microscope (SEM, Tokyo, Japan) and a Bruker atomic force microscope (AFM). The thicknesses of the NiO_x, MAPbI₃ and PC₆₁BM films were determined using a Bruker DektakXT Stylus Profiler. The photoluminescence (PL) spectra were measured using an Edinburgh FLS980 fluorescence spectrophotometer (Livingston, UK) with an excitation at 550 nm. The impedance characteristics of the devices were measured via a Wayne Kerr 6500B analyzer (London, UK).