Dso5054a

Atomic force micrographs were acquired in non-contact mode with a ppp-NCHR 5M probe (Nanosensors) attached to a XE-100 microscope (Park Systems). The Raman spectra were acquired using a Renishaw In-Via system with a 532 nm excitation laser. The XRD profiles were obtained using a Dmax2500/PC (Rigaku) spectrometer operated at 40 kV, 200 mA, and 8 kW using a Cu target (1.5406 Å) at a scan rate of 2° min⁻¹. The XPS profiles were acquired using a PHI 5000 VersaProbe (Ulvac-PHI) system at a base pressure of 6.7 × 10⁻⁸ Pa using a monochromated Al Ka (1486.6 eV) anode (25 W, 15 kV) with a spot size of 100 μm × 100 μm. The transmittance data were recorded on a Cary 5000 (Varian) spectrometer from 175 nm to 3300 nm at a scan rate of 600 nm·min⁻¹ at a resolution of 1.0 nm. The optical spectrum, its characteristics, and those of the pulse waveform, were respectively measured using an autocorrelator (25 fs resolution, HAC-200, Alnair Labs), an optical spectrum analyzer (0.02 nm resolution, C-band scan range, SW7370C, Yokogawa), and an oscilloscope (DSO 5054A, Agilent Technology).

In all, 300 mm wafers have been characterized on an Accretec UF3000-e fully automatic probe station. The chuck temperature has been adjusted from 25 to 125 °C. Device characteristics have been collected using a Keithley 4200A Semiconductor Characterization System with four 4210-SMU source measurement units. The sinusoidal waveforms have been supplied by an arbitrary waveform generator (Agilent 81160A). Analog output waveforms of V_OUT were collected using an Agilent DSO5054A digital oscilloscope, having an amplitude resolution limit of 2 mV and with activated low-pass-filter limiting the measurements to 25 MHz. The tool exhibited a small DC-offset of 2 mV, which was corrected in Figs. 3 and  4. To improve the readability of the graphs, noise has been reduced by a running average filter, which also slightly reduced the signal amplitudes. For reference, the original data can be found in Supplementary Fig. 8 in the supplementary information.