For characterization, three samples were prepared with thick Al2O3 (20 nm), thick NiO (30 nm) on thick Al2O3 and thin NiO (2 nm) on thick Al2O3. Wafers with thick dielectrics were considered as the bulk samples whereas the wafer with thin NiO was considered as the interfacial sample. X-ray photoelectron spectroscopy (XPS) was done on these samples to measure the chemical composition and valence band offset (VBO) at the interface of NiO and Al2O3. Samples were measured at a 90° take-off-angle yielding a penetration depth of <10 nm. The scanning area was 500 μm in diameter and measurements were performed with a Kratos Axis HSi with a monochromatic Al kα x-ray source. Charge neutralization of the sample surface was achieved by a low-energy electron flood gun. We used a pass energy of 160 eV to ascertain survey spectra and a pass energy of 40 eV was used to perform high-resolution core level spectra. These samples were also used to obtain optical properties and bandgap by UV/visible/near-IR variable angle spectroscopic ellipsometry (VASE). We combined XPS and VASE results to generate the band line-up.
Axis hsi
Manufactured by Shimadzu
Sourced in United Kingdom
The AXIS-HSi is a high-speed imaging system designed for scientific and industrial applications. It captures high-quality images at rapid frame rates, enabling the analysis of fast-moving processes and phenomena. The core function of the AXIS-HSi is to provide advanced imaging capabilities for research, development, and quality control purposes.
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Lab products found in correlation
New d8 advance, by Bruker (1 mentions)
Nanowizard 2, by Bruker (1 mentions)
V 770, by Jasco (1 mentions)
Flash 2000 analyzer, by Thermo Fisher Scientific (1 mentions)
Atomic force microscope, by Veeco (1 mentions)
Jem 2100f, by JEOL (1 mentions)
Jem 1010, by JEOL (1 mentions)
Tristar 3000, by Micromeritics (1 mentions)
Dxr2xi, by Thermo Fisher Scientific (1 mentions)
Axis nova, by Shimadzu (1 mentions)
Tensor 27, by Bruker (1 mentions)
Sdt q600, by TA Instruments (1 mentions)
Xe 100, by Park Systems (1 mentions)
11 protocols using axis hsi
1
Interfacial Characterization of NiO/Al2O3
2
Characterization of Electrospun PVDF Webs
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X-ray diffraction patterns, to confirm the crystalline structures of PVDF, were obtained using an XRD analyzer (New D8 Advance, Bruker, USA) with Cu-Kα radiation at 40 kV and 40 mA. The XRD measurements were recorded in the 2θ range of 10 to 45°, and the scan speed and the scan size were 0.3° s−1 and 0.02°, respectively. The surface chemical composition and the bonding structure of the electrospun webs were investigated by X-ray photoelectron spectroscopy (XPS, AXIS-HSI, Kratos Analytical, UK) to explain the phenomenon of superhydrophobicity observed after plasma etching and water immersion.
3
Surface Characterization of Functionalized Surfaces
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The contact angle measurements (Phoenix 300, Surface Electro-Optics, South Korea), fluorescence measurements (ProgRes CapturePro software), X-ray photoelectron spectroscopy, and atomic force microscopy (JPK NanoWizard II) were performed to characterize the functionalized surface. The XPS analyses were performed using an AxisHsi (Kratos Analytical, UK) equipped with an aluminum X-ray source (mono-gun, 1486.6 eV) with the pass energy of 40 eV. The pressure in the chamber was below 5 × 10−9 Torr before the data were recorded, and the voltage and current of the anode were 13 kV and 18 mA, respectively. The take-off angle was set at 45°. The binding energy of C1s (284.5 eV) was used as the reference. The resolution for the measurement of the binding energy was about 0.1 eV.
4
PDMS Surface Characterization via XPS
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X-ray photoelectron spectroscopy (XPS) analyses were performed to verify the successful PDA coating of the PDMS surface using an AxisHsi instrument (Kratos Analytical, Manchester, UK) equipped with an aluminum X-ray source (mono-gun, 1486.6 eV) with a pass energy of 40 eV. Before the data were recorded, the pressure in the chamber was less than 5 × 10−9 Torr, and the anode voltage and current were 13 kV and 18 mA, respectively. The take-off angle was set at 45° and the resolution for the binding energy measurement was approximately 0.1 eV. A binding energy of C1s (284.6 eV) was used as a reference.
5
Characterization of Electrospun Nanofibers
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The morphology of the electrospun nanofibers and the channel area of the fabricated device were observed using field emission scanning electron microscopy (MERLIN, Compact) after platinum coating. Ultraviolet–visible spectra were obtained by UV/Vis spectroscopy (V‐770, JASCO). A background spectrum of a bare cover glass (18 mm × 18 mm, MARIENFELD) was recorded for baseline correction. Samples were prepared by transferring 10 and 50 µL electrospun nanofibers onto a cover glass, treatment with 4% DMSO v/v, and drying for 2 h at 120 °C in a dry oven. Atomic force microscopy (AFM) imaging was performed in noncontact or tapping mode by scanning the sample surface using an NX‐10 (Park Systems). X‐ray photoelectron spectroscopy (XPS) measurements were carried out using an AXIS‐HSi (Kratos, UK) system. The XPS spectra were fitted by using CasaXPS software.
6
Multimodal Characterization of Nanomaterials
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TEM images and TEM-EDS images were obtained using a JEOL JEM-1010 and JEM-2100F, respectively. AFM images were obtained using a Veeco atomic force microscope. Raman spectroscopy measurements were carried out on a Dongwoo DM500i Raman spectrometer using green (514.5 nm) laser excitation. BET surface area and BJH pore size distributions were measured by using a Micromeritics Tristar 3000. XPS was carried out using a Kratos AXIS-HSi. Elemental analysis was performed using a Thermo Scientific Flash 2000 analyzer at NCIRF (National Center for Inter-university Research Facilities, Seoul National University, Korea).
7
Comprehensive Characterization of Photovoltaic Devices
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The current–voltage (J–V) characteristics of the devices were measured using a Keithley 237 source measurement unit with an AM 1.5 G solar simulator (Newport, 91160A). For device stability measurement, the devices were kept in ambient conditions without any encapsulation. The optical properties were studied through absorption spectroscopy (Beckman Coulter, US/DU 70 Series). Surface topography characterization and thickness measurement was performed using atomic force microscopy (AFM) (Park Systems, XE-100). Cole–Cole plot characterization was conducted using impedance spectroscopy (Wayne Kerr Electronics, 6500B Series). X-ray photoelectron spectroscopy (XPS) (Kratos, Inc., AXIS-HSi) and ultraviolet photoelectron spectroscopy (UPS) (Kratos, Inc., AXIS-NOVA) were used for film analysis. The thermogravimetric analysis (TGA) was measured using a measurement unit (TA Instruments, SDT Q600) under N2 atmosphere with a ramp-up speed of 10 °C min−1 up to 900 °C to the maximum. The Fourier-transform infrared spectroscopy (FTIR) was measured by spectroscopy (Bruker, TENSOR27) under ambient atmosphere. The Raman spectroscopy was measured by spectroscopy (Thermo Fisher, DXR2xi) with 532 nm laser excitation.
8
X-ray Photoelectron Spectroscopy of GQD Powder
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The GQD powder was prepared by the same method as for element analysis. The binding energy of C1s was measured by XPS (AXIS-HSi, KRATOS).
9
X-ray Photoemission Spectroscopy Protocol for Surface Analysis
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X-ray photoemission spectroscopy (XPS) experiments (Kratos AXIS-HSi) were performed at 2 × 10−7 Pa at room temperature using monochromatized Al Kα line (hν = 1486.6 eV) radiation. The sample was transferred in air from the STM chamber to the XPS chamber for XPS measurement. Energy calibration was performed using the Au Fermi edge in each sample, and the energy resolution was set to 550 meV for all spectra. The background subtraction was performed using the Shirley method. In the background subtraction of O 1s XPS spectra presented in Fig. 1d , an Au 4p3/2 peak centered at 546 eV (not shown) was also subtracted. All spectra were normalized relative to the total emission in the wide scan spectra.
10
Chemical Composition Analysis via XPS
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X-ray photoelectron spectroscopy (XPS) was performed to characterize the chemical compositions of the different PDMS surfaces. The measurements were performed using an AxisHsi (Kratos Analytical, Stretford, UK) equipped with a mono-gun aluminum X-ray radiation source (1486.6 eV) and a pass energy of 40 eV. The pressure in the chamber was below 5 × 10−9 Torr, and the take-off angle was set at 45°. The anode voltage was 13 kV, and the current was 18 mA. The binding energy of C1s (284.6 eV) was used as the reference.
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